Abstract: A method of forming a gate dielectric layer includes forming a gate dielectric layer over a substrate. The gate dielectric layer is processed with carbon-containing ions. The gate dielectric layer is thermally processed, thereby providing the gate dielectric layer with a level of carbon between about 1 atomic % and about 20 atomic %.

Abstract: A method for stripping photoresist and cleaning a semiconductor substrate include a high temperature stripping process in a freshly mixed SPM solution followed by cleaning in a water soluble organic co-solvent such as acetone, IPA, methanol, ethanol, butanol, or DMSO. The substrate may undergo back side heating during the SPM solution stripping process and may optionally use nanospraying techniques to direct the water soluble organic co-solvent to the substrate. The method completely strips plasma hardened photoresist using only wet chemical operations.

Abstract: A cleaning sequence usable in semiconductor manufacturing efficiently cleans semiconductor substrates while preventing chemical oxide formation thereon. The sequence includes the sequence of: 1) treating with an HF solution; 2) treating with pure H2SO4; 3) treating with an H2O2 solution; 4) a DI water rinse; and 5) treatment with an HCl solution. The pure H2SO4 solution may include an H2SO4 concentration of about ninety-eight percent (98%) or greater. After the HCl solution treatment, the cleaned surface may be a silicon surface that is free of a chemical oxide having a thickness of 5 angstroms or greater. The invention finds particular advantage in semiconductor devices that utilize multiple gate oxide thicknesses.

Abstract: A metal-oxide-semiconductor field-effect transistors (MOSFET) with a gate structure having a deuterated layer is provided. In accordance with embodiments of the present invention, a transistor comprises the deuterated layer formed over a gate dielectric layer. A gate electrode is formed over the deuterated layer. The deuterated layer prevents or reduces dopant penetration into a substrate from the gate electrode. The deuterated layer may be, for example, formed by a thermal process in an ambient of a deuterated gas, such as deuterated ammonia. The deuterated layer may also be formed by a nitridation process using deuterated ammonia.