Abstract: A polarizing device includes: a first waveguide to guide input light, a second waveguide to guide TE-polarized light, wherein the second waveguide includes a tapered input portion to polarization-selectively couple TE-polarized light from the first waveguide to the second waveguide, wherein the tapered input portion symmetrically overlaps the first waveguide, and the thickness of the tapered input portion has been selected to substantially prevent coupling of TM-polarized light from the first waveguide to the second waveguide, wherein the refractive index of the second waveguide is higher than the refractive index of the first waveguide.

Abstract: According to an example aspect of the present invention, there is provided an electro-optic plasmonic device comprising: a slot waveguide that is defined by a first metallic electrode, a second metallic electrode and dielectric material in a slot between the first and second metallic electrodes. The device is configured to utilize the electric field induced Pockels effect.

Abstract: The invention relates to optical waveguide components, such as Faraday rotators and their manufacture Faraday rotators based on silicon waveguides are provided, where the waveguide has folded or wound sections that are parallel to an externally applied magnetic field.

Abstract: The invention concerns a polarization rotator. The inventive polarization rotator comprises an optical coupler comprising a waveguide having at one first end at least a first port configured as an input port for polarized light and a second port configured as an output port for reflected polarized light, said waveguide having a second end opposite to said first end. It further comprises a birefringent waveplate having on one side a reflective surface, which waveplate is arranged to receive light from said second end of said waveguide and to reflect light transmitted out from said coupler back into said coupler. According to the invention, the waveplate is further configured to cause said birefringent material to rotate the polarization of said reflected light, which amount of rotation depends on an angle of rotation of said birefringent waveplate with respect to said optical coupler.

Abstract: The invention relates to photonic circuits, in particular to photonic circuits where light is escalated transferred between optical waveguides which are coupled to photonic devices. A first waveguide on a silicon substrate is provided having a first thickness and a first refractive index. A tapered second waveguide having a second thickness less than the first thickness and a second refractive index higher than said first refractive index is deposited on the first waveguide. At least one layer of an optically active material comprising a photonic device is deposited on the first waveguide adjacent to the second waveguide. The photonic device is interfaced with the wide end of the tapered second waveguide to provide an optical coupling, and the opposite narrow end of the tapered second waveguide is interfaced on top of the first waveguide to provide adiabatic light transfer between said first and second waveguides.

Abstract: According to an example aspect of the present invention, there is provided a method for integrating photonic circuits comprising optical waveguides, where a smaller chip with at least one first photonic circuit is aligned and bonded on top of a larger chip having at least one second photonic circuit in order to couple light between optical waveguides on each chip, wherein optical coupling between the waveguides on said chips occurs from a single side of said smaller chip.

Abstract: The invention relates to optical waveguide components, such as Faraday rotators and their manufacture Faraday rotators based on silicon waveguides are provided, where the waveguide has folded or wound sections that are parallel to an externally applied magnetic field.

Abstract: The invention relates to photonic circuits, in particular to photonic circuits where light is escalated transferred between optical waveguides which are coupled to photonic devices. A first waveguide on a silicon substrate is provided having a first thickness and a first refractive index. A tapered second waveguide having a second thickness less than the first thickness and a second refractive index higher than said first refractive index is deposited on the first waveguide. At least one layer of an optically active material comprising a photonic device is deposited on the first waveguide adjacent to the second waveguide. The photonic device is interfaced with the wide end of the tapered second waveguide to provide an optical coupling, and the opposite narrow end of the tapered second waveguide is interfaced on top of the first waveguide to provide adiabatic light transfer between said first and second waveguides.

Abstract: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 ?m laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

Abstract: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 ?m laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

Abstract: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 ?m laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

Abstract: An optical multi-mode HIC (high index contrast) waveguide (102, 104, 201, 301) for transporting electromagnetic radiation in the optical waveband, the waveguide comprising a guiding core portion (204) with higher refractive index, and cladding portion (206) with substantially lower refractive index configured to at least partially surround the light guiding core in the transverse direction to facilitate confining the propagating radiation within the core, the waveguide being configured to support multiple optical modes of the propagating radiation, wherein the waveguide incorporates a bent waveguide section (202) having bend curvature that is configured to at least gradually, preferably substantially continuously, increase towards a maximum curvature of said section from a section end.

Abstract: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 ?m laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

Abstract: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 ?m laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

Abstract: An optical multi-mode HIC (high index contrast) waveguide (102, 104, 201, 301) for transporting electromagnetic radiation in the optical waveband, the waveguide comprising a guiding core portion (204) with higher refractive index, and cladding portion (206) with substantially lower refractive index configured to at least partially surround the light guiding core in the transverse direction to facilitate confining the propagating radiation within the core, the wave-guide being configured to support multiple optical modes of the propagating radiation, wherein the waveguide incorporates a bent waveguide section (202) having bend. curvature that is configured to at least gradually, preferably substantially continuously, increase towards a maximum curvature of said section from a section end.

Abstract: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 ?m laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

Abstract: An optical mode converter has a coupling waveguide and a receiving waveguide. The coupling waveguide has at an input end a first effective refractive index and includes a tapered core of a substantially constant refractive index with a substantially square cross section at the input end, which has a size that tapers down moving away from the input end. The coupling waveguide also has a cladding at least partially surrounding the tapered core. The receiving waveguide has a second effective refractive index at an output end and includes a core of a substantially constant refractive index greater than the refractive index of the tapered core of the coupling waveguide and a cladding at least partially surrounding the core. A side surface of the tapered core of the coupling waveguide is optically in contact, in a coupling portion, with the receiving waveguide so as to allow optical coupling between the coupling waveguide and the receiving waveguide.

Abstract: An optical device for splitting/combining a first and a second continuous optical wavelength bands, each wider than 10 nm, has a first, a second, a third, a fourth and a fifth optical splitting devices optically coupled in cascade and a first, a second, a third and a fourth optical differential delay devices optically coupled to, and interleaved between, the optical splitting devices. A suitable choice of the coupling angles of the splitting devices and of the differential delays of the optical differential delay devices gives to the structure flattened passbands and stopbands and makes the optical device tolerant to fluctuations of the structural parameters. An apparatus includes the optical device for use in fiber-to-the-premises networks.

Abstract: An optical mode converter has a coupling waveguide and a receiving waveguide. The coupling waveguide has at an input end a first effective refractive index and includes a tapered core of a substantially constant refractive index with a substantially square cross section at the input end, which has a size that tapers down moving away from the input end. The coupling waveguide also has a cladding at least partially surrounding the tapered core. The receiving waveguide has a second effective refractive index at an output end and includes a core of a substantially constant refractive index greater than the refractive index of the tapered core of the coupling waveguide and a cladding at least partially surrounding the core. A side surface of the tapered core of the coupling waveguide is optically in contact, in a coupling portion, with the receiving waveguide so as to allow optical coupling between the coupling waveguide and the receiving waveguide.

Abstract: An optical device for splitting/combining a first and a second continuous optical wavelength bands, each wider than 10 nm, has a first, a second, a third, a fourth and a fifth optical splitting devices optically coupled in cascade and a first, a second, a third and a fourth optical differential delay devices optically coupled to, and interleaved between, the optical splitting devices. A suitable choice of the coupling angles of the splitting devices and of the differential delays of the optical differential delay devices gives to the structure flattened passbands and stopbands and makes the optical device tolerant to fluctuations of the structural parameters. An apparatus includes the optical device for use in fiber-to-the-premises networks.