Abstract: According to an example aspect of the present invention, there is provided an electro-optic plasmonic device comprising: a slot waveguide that is defined by a first metallic electrode, a second metallic electrode and dielectric material in a slot between the first and second metallic electrodes. The device is configured to utilize the electric field induced Pockels effect.

Abstract: A polarizing device includes: a first waveguide to guide input light, a second waveguide to guide TE-polarized light, wherein the second waveguide includes a tapered input portion to polarization-selectively couple TE-polarized light from the first waveguide to the second waveguide, wherein the tapered input portion symmetrically overlaps the first waveguide, and the thickness of the tapered input portion has been selected to substantially prevent coupling of TM-polarized light from the first waveguide to the second waveguide, wherein the refractive index of the second waveguide is higher than the refractive index of the first waveguide.

Abstract: According to an example aspect of the present invention, there is provided a photonic integrated circuit, comprising: a waveguide with an end having a tilted surface for reflecting light with a total internal reflection (TIR) mirror, and a functional surface for interacting with the light reflected by the TIR mirror, wherein the functional surface is directly deposited on to an antireflection coating on the waveguide. According to another aspect of the present invention there is provided a method for manufacturing a photonic integrated circuit.

Abstract: The invention concerns a polarization rotator. The inventive polarization rotator comprises an optical coupler comprising a waveguide having at one first end at least a first port configured as an input port for polarized light and a second port configured as an output port for reflected polarized light, said waveguide having a second end opposite to said first end. It further comprises a birefringent waveplate having on one side a reflective surface, which waveplate is arranged to receive light from said second end of said waveguide and to reflect light transmitted out from said coupler back into said coupler. According to the invention, the waveplate is further configured to cause said birefringent material to rotate the polarization of said reflected light, which amount of rotation depends on an angle of rotation of said birefringent waveplate with respect to said optical coupler.

Abstract: A polarizing device includes: a first waveguide to guide input light, a second waveguide to guide TE-polarized light, wherein the second waveguide includes a tapered input portion to polarization-selectively couple TE-polarized light from the first waveguide to the second waveguide, wherein the tapered input portion symmetrically overlaps the first waveguide, and the thickness of the tapered input portion has been selected to substantially prevent coupling of TM-polarized light from the first waveguide to the second waveguide, wherein the refractive index of the second waveguide is higher than the refractive index of the first waveguide.

Abstract: According to an example aspect of the present invention, there is provided an electro-optic plasmonic device comprising: a slot waveguide that is defined by a first metallic electrode, a second metallic electrode and dielectric material in a slot between the first and second metallic electrodes. The device is configured to utilize the electric field induced Pockels effect.

Abstract: The invention relates to optical waveguide components, such as Faraday rotators and their manufacture Faraday rotators based on silicon waveguides are provided, where the waveguide has folded or wound sections that are parallel to an externally applied magnetic field.

Abstract: The invention concerns a polarization rotator. The inventive polarization rotator comprises an optical coupler comprising a waveguide having at one first end at least a first port configured as an input port for polarized light and a second port configured as an output port for reflected polarized light, said waveguide having a second end opposite to said first end. It further comprises a birefringent waveplate having on one side a reflective surface, which waveplate is arranged to receive light from said second end of said waveguide and to reflect light transmitted out from said coupler back into said coupler. According to the invention, the waveplate is further configured to cause said birefringent material to rotate the polarization of said reflected light, which amount of rotation depends on an angle of rotation of said birefringent waveplate with respect to said optical coupler.

Abstract: The invention relates to photonic circuits, in particular to photonic circuits where light is escalated transferred between optical waveguides which are coupled to photonic devices. A first waveguide on a silicon substrate is provided having a first thickness and a first refractive index. A tapered second waveguide having a second thickness less than the first thickness and a second refractive index higher than said first refractive index is deposited on the first waveguide. At least one layer of an optically active material comprising a photonic device is deposited on the first waveguide adjacent to the second waveguide. The photonic device is interfaced with the wide end of the tapered second waveguide to provide an optical coupling, and the opposite narrow end of the tapered second waveguide is interfaced on top of the first waveguide to provide adiabatic light transfer between said first and second waveguides.

Abstract: According to an example aspect of the present invention, there is provided a method for integrating photonic circuits comprising optical waveguides, where a smaller chip with at least one first photonic circuit is aligned and bonded on top of a larger chip having at least one second photonic circuit in order to couple light between optical waveguides on each chip, wherein optical coupling between the waveguides on said chips occurs from a single side of said smaller chip.

Abstract: The invention relates to optical waveguide components, such as Faraday rotators and their manufacture Faraday rotators based on silicon waveguides are provided, where the waveguide has folded or wound sections that are parallel to an externally applied magnetic field.

Abstract: The invention relates to photonic circuits, in particular to photonic circuits where light is escalated transferred between optical waveguides which are coupled to photonic devices. A first waveguide on a silicon substrate is provided having a first thickness and a first refractive index. A tapered second waveguide having a second thickness less than the first thickness and a second refractive index higher than said first refractive index is deposited on the first waveguide. At least one layer of an optically active material comprising a photonic device is deposited on the first waveguide adjacent to the second waveguide. The photonic device is interfaced with the wide end of the tapered second waveguide to provide an optical coupling, and the opposite narrow end of the tapered second waveguide is interfaced on top of the first waveguide to provide adiabatic light transfer between said first and second waveguides.

Abstract: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 ?m laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

Abstract: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 ?m laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

Abstract: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 ?m laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

Abstract: An optical multi-mode HIC (high index contrast) waveguide (102, 104, 201, 301) for transporting electromagnetic radiation in the optical waveband, the waveguide comprising a guiding core portion (204) with higher refractive index, and cladding portion (206) with substantially lower refractive index configured to at least partially surround the light guiding core in the transverse direction to facilitate confining the propagating radiation within the core, the waveguide being configured to support multiple optical modes of the propagating radiation, wherein the waveguide incorporates a bent waveguide section (202) having bend curvature that is configured to at least gradually, preferably substantially continuously, increase towards a maximum curvature of said section from a section end.

Abstract: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 ?m laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

Abstract: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 ?m laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).

Abstract: An optical multi-mode HIC (high index contrast) waveguide (102, 104, 201, 301) for transporting electromagnetic radiation in the optical waveband, the waveguide comprising a guiding core portion (204) with higher refractive index, and cladding portion (206) with substantially lower refractive index configured to at least partially surround the light guiding core in the transverse direction to facilitate confining the propagating radiation within the core, the wave-guide being configured to support multiple optical modes of the propagating radiation, wherein the waveguide incorporates a bent waveguide section (202) having bend. curvature that is configured to at least gradually, preferably substantially continuously, increase towards a maximum curvature of said section from a section end.

Abstract: Examples of the present invention include integrated erbium-doped waveguide lasers designed for silicon photonic systems. In some examples, these lasers include laser cavities defined by distributed Bragg reflectors (DBRs) formed in silicon nitride-based waveguides. These DBRs may include grating features defined by wafer-scale immersion lithography, with an upper layer of erbium-doped aluminum oxide deposited as the final step in the fabrication process. The resulting inverted ridge-waveguide yields high optical intensity overlap with the active medium for both the 980 nm pump (89%) and 1.5 ?m laser (87%) wavelengths with a pump-laser intensity overlap of over 93%. The output powers can be 5 mW or higher and show lasing at widely-spaced wavelengths within both the C- and L-bands of the erbium gain spectrum (1536, 1561 and 1596 nm).