Patents by Inventor Matteo Fiorito

Matteo Fiorito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for manufacturing a semiconductor wafer integrating electronic devices including a structure for electromagnetic decoupling
    Patent number: 6869856
    Abstract: A process for manufacturing a semiconductor wafer integrating electronic devices and a structure for electromagnetic decoupling are disclosed. The method includes providing a wafer of semiconductor material having a substrate; forming a plurality of first mutually adjacent trenches, open on a first face of the wafer, which have a depth and a width and define walls); by thermal oxidation, completely oxidizing the walls and filling at least partially the first trenches, so as to form an insulating structure of dielectric material; and removing one portion of the substrate comprised between the insulating structure and a second face of the wafer, opposite to the first face of the wafer.
    Type: Grant
    Filed: October 29, 2002
    Date of Patent: March 22, 2005
    Assignee: STMicroelectronics S.r.l.
    Inventors: Chantal Combi, Matteo Fiorito, Marta Mottura, Giuseppe Visalli, Benedetto Vigna
  • Process for manufacturing a semiconductor wafer integrating electronic devices and a structure for electromagnetic decoupling
    Publication number: 20030113981
    Abstract: A process for manufacturing a semiconductor wafer integrating electronic devices and a structure for electromagnetic decoupling are disclosed. The method includes providing a wafer of semiconductor material having a substrate; forming a plurality of first mutually adjacent trenches, open on a first face of the wafer, which have a depth and a width and define walls); by thermal oxidation, completely oxidizing the walls and filling at least partially the first trenches, so as to form an insulating structure of dielectric material; and removing one portion of the substrate comprised between the insulating structure and a second face of the wafer, opposite to the first face of the wafer.
    Type: Application
    Filed: October 29, 2002
    Publication date: June 19, 2003
    Applicant: STMicroelectronics S.r.I.
    Inventors: Chantal Combi, Matteo Fiorito, Marta Mottura, Giuseppe Visalli, Benedetto Vigna