Abstract: A charging material made from semiconductor material, is used for charging or recharging a melting crucible during the Czochralski crucible-pulling process. This charging material has a polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue, which rods are coupled by means of a tongue-and-groove connection. There is also a holding system for holding a polycrystalline silicon rod during the Czochralski crucible-pulling process or the float zone process, which has a tongue-and-groove connection between the polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue.

Abstract: A method for conveying silicon fragments has the silicon fragments being conveyed over a conveyor surface, which is made from hyperpure silicon. There is a vibrating conveyor, and during the conveying, the sharp edges of the silicon fragments are rounded and mechanical-physical decontamination takes place. The vibrating conveyor has a conveyor surface which is made from hyperpure silicon. A second vibrating conveyor unit has a conveyor surface which is made from hyperpure silicon and has passage openings therethrough.

Abstract: A method is for processing semiconductor material, in which one or more shock waves generated using a transducer are transmitted through a liquid medium to semiconductor material in rod form. The transducer is at a distance of from 1 cm to 100 cm from the semiconductor material, and the shock waves have a pulse energy of from 1 to 20 kJ and a pulse rise time to the energy maximum of from 1 to 5 &mgr;s.

Abstract: A method of producing a polycrystalline silicon rod is by depositing silicon on a carrier rod and cutting to size a molding produced in the process. In order that the silicon rod is given a rod end which is free of cracks and flaking, the rod is rotated about its longitudinal axis and cut through with a parting tool.

Abstract: A charging material made from semiconductor material, is used for charging or recharging a melting crucible during the Czochralski crucible-pulling process. This charging material has a polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue, which rods are coupled by means of a tongue-and-groove connection. There is also a holding system for holding a polycrystalline silicon rod during the Czochralski crucible-pulling process or the float zone process, which has a tongue-and-groove connection between the polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue.

Abstract: A device for the optoelectronic classification of semiconductor materials, which has an identifying device 6 that forwards the morphology of the product 1 to be classified to an evaluating device 7 which evaluates the data.

Abstract: A separation device which has at least one blower device and at least one deflector device can be used to separate large fragments of semiconductor material from small fragments of semiconductor material.

Abstract: A device for protecting semiconductor material includes a support and a surface made of ice formed from ultrapure water. Semiconductor material is situated on this support surface.

Abstract: An apparatus for the optoelectronic classification of semiconductor materials, has a separating device 2 and a slide face 3, the angle of the slide face 3 to the horizontal being adjustable, and the separating device 2 and the slide face 3 each having a surface made of the semiconductor material to be separated. There is a radiation source 5, through the beam path of which the material to be classified falls, and a shape recognition device 6, which transmits the shape of the material to be classified to a control unit 7, which controls at least one diverter device 8.

Abstract: A method for the treatment of semiconductor material in a liquid bath has the treatment based upon the occurrence of cavitation being brought about in the liquid bath. The semiconductor material is contacted with a cavitating liquid in order to clean fragments of the semiconductor material and to round fracture edges of the fragments.

Abstract: A method for the contamination-free comminution of semiconductor material cludes an apparatus by which the method is carried out. The method includes creating at least one liquid jet by applying pressure to a liquid and forcing it through a nozzle, and directing the liquid jet against the semiconductor material, so that it impinges on its surface at high velocity. The apparatus includes a container for receiving comminuted semiconductor material, at least one nozzle through which a liquid jet is directed at high velocity against the semiconductor material to be comminuted, a conveyor device for removing the comminuted semiconductor material from the container, means for releasing and interrupting the liquid jet, and means for positioning the nozzle and/or advancing the semiconductor material.