Abstract: The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.

Abstract: An article comprising a multi-port variable capacitor is disclosed. In one embodiment, a movable plate is suspended above at least a first and a second, fixed, electrically-isolated electrode. The first electrode is electrically connected to a bias supply, and the second electrode is electrically connected to an AC signal-carrying line. As bias is applied across the first electrode and the movable plate, an electrostatic attraction is developed therebetween that causes the movable plate to move downwardly towards the first electrode. The capacitance of the variable capacitor increases as the separation distance between the movable plate and the fixed electrodes decreases. Unlike conventional variable capacitors, in the present multi-port variable capacitors, the bias (delivered via the first electrode) and the signal (delivered via the second electrode) are electrically isolated from one another. As such, the bias (DC) and signal (AC) paths are advantageously electrically isolated.