Abstract: A canola germplasm confers on a canola seed the traits of high protein content and low fiber content, wherein the canola plant produces a seed having, on average, at least 68% oleic acid (C18:1) and less than 3% linolenic acid (C18:3). The canola seed traits may also include at least 45% crude protein and not more than 18% acid detergent fiber content on an oil-free, dry matter basis. In particular embodiments, the canola seed has been dehulled and defatted resulting in a meal product with at least 58% crude protein and less than 10% acid detergent fiber on an oil-free, dry matter basis.

Abstract: Embodiments of the invention provide systems and methods for speech signal handling. Speech handling according to one embodiment of the present invention can be performed via a hosted architecture. Electrical signal representing human speech can be analyzed with an Automatic Speech Recognizer (ASR) hosted on a different server from a media server or other server hosting a service utilizing speech input. Neither server need be located at the same location as the user. The spoken sounds can be accepted as input to and handled with a media server which identifies parts of the electrical signal that contain a representation of speech. This architecture can serve any user who has a web-browser and Internet access, either on a PC, PDA, cell phone, tablet, or any other computing device.

Abstract: The present invention relates to an ablative thermolysis reactor (12) comprising a reaction vessel (20), and inlet (14) into the reaction vessel (20) for receiving feedstock, and an outlet from the reaction vessel (20) for discharging thermolysis product. Within the reaction vessel (20), is provided an ablative surface (20a) defining the periphery of a cylinder, and heating means (22) are arranged to heat the ablative surface (20a) to an elevated temperature. In addition at least one rotatable surface (28) having an axis of rotation coincident with the longitudinal axis of said cylinder. The rotatable surface (28) is provided relative to the ablative surface (20a) such that feedstock is pressed between a part of the rotatable surface (28) and said ablative surface (20a) and moved along the ablative surface (20a) by the rotatable surface (28), whereby to thermolyse said feedstock.

Abstract: A method and system are described for providing an interactive video player. The method may include, responsive to a first user input, generating a secondary display from a primary display, wherein the primary display is an active video and the secondary display is a frame captured from the primary display. The method may also include, responsive to a second user input, generating a tertiary display from the secondary display, said tertiary display including product information about at least one item shown in the secondary display.

Abstract: An interactive video player includes the capturing of one or more frames of active video. While the active video is displayed in a first or primary display, a captured frame may be displayed in a secondary display. In response to user input, one or more elements within the frame may be highlighted or otherwise designated. In a third display or portion of a visible screen, user input commands may provide for the input or retrieval of product information associated with the highlighted component. Therefore, in the display, the active video may be maintained, with a display of the captured frame and the display of the product information. Additionally, the product information may be additionally linked to the captured frame and/or the active video, such that if additional users view the active video, they may be able to view the product information.

Abstract: A system and method for user generated content includes receiving a user-selected data field, which includes reference to a particular item or element to be displayed on a web portal. The system and method associates the data field with an electronic log, such as automatically generating an electronic log entry off of a template to include the received data field. The system and method thereby associates the electronic log with the registered user that provided the data field. The electronic log, which may be referenced by the user, is provided to a central log repository location, such that it is thereupon viewable through the web portal. The system and method associates the content element with a commercial vendor, which thereby allows for the purchase of the content element and subsequently through tracking the purchase element, the registered user may be given credit for any subsequent purchase.

Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for bandgap grading in a thin-film device using such particles. The method may be comprised of providing a bandgap grading material comprising of an alloy having: a) a IIIA material and b) a group IA-based material, wherein the alloy has a higher melting temperature than a melting temperature of the IIIA material in elemental form. A precursor material may be deposited on a substrate to form a precursor layer. The precursor material comprising group IB, IIIA, and/or VIA based particles. The bandgap grading material of the alloy may be deposited after depositing the precursor material. The alloy in the grading material may react after the precursor layer has begun to sinter and thus maintains a higher concentration of IIIA material in a portion of the compound film that forms above a portion that sinters first.

Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a process for forming solid particles is provided. The method includes providing a first suspension of solid and/or liquid particles containing at least one group IIIA element. A material may be added to substantially increase the melting point of at least one set of group IIIA-containing particles in the suspension into higher-melting solid particles comprising an alloy of the group IIIA element and at least a part of the added material. The suspension may be deposited onto a substrate to form a precursor layer on the substrate and the precursor layer is reacted in a suitable atmosphere to form a film.

Abstract: Compositions for ameliorating the symptoms associated with lactase deficiency, the composition including a lactose reduced dairy product, and an effective amount of a probiotic, a prebiotic, or a mixture thereof. The lactose reduced dairy product is selected from a fluid milk, a smoothie, a liquado, ice cream, yogurt, and a yogurt drink. Methods for treating lactose intolerance in a patient in need thereof, the method includes providing a composition having a lactose reduced dairy product, and an effective amount of a probiotic, a prebiotic, or a mixture thereof. The lactose reduced dairy product is selected from a fluid milk, a smoothie, a liquado, ice cream, yogurt, and a yogurt drink.

Abstract: A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method includes forming a first layer of a first precursor material over a surface of a substrate, wherein the precursor material comprises group IB-chalcogenide and/or group IIIA-chalcogenide particles. The method may include forming at least a second layer of a second precursor material over the first layer, wherein the second precursor material comprises group IB-chalcogenide and/or group IIIA-chalcogenide particles and wherein the second precursor material has a chalcogen content greater than that of the first material.

Abstract: Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.

Abstract: A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and/or group IIIA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen-free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature.

Abstract: A high-throughput method of forming a semiconductor precursor layer by use of low-melting chalcogenides is disclosed. In one embodiment, a method is provided that comprises of forming a precursor material comprising group IB-chalcogenide and/or group IIIA-chalcogenide particles, wherein amounts of the group IB or IIIA element and amounts of chalcogen in the particles are selected to be at a desired stoichiometric ratio for the group IB or IIIA chalcogenide that provides a melting temperature less than a highest melting temperature found on a phase diagram for any stoichiometric ratio of elements for the group IB or IIIA chalcogenide. The method includes disposing the particle precursor material over a surface of a substrate and heating the particle precursor material to a temperature sufficient to react the particles to form a film of a group IB-IIIA-chalcogenide compound. The method may include at least partially melting the particles.

Abstract: Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices.

Abstract: A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-rich chalcogenides is disclosed. The method comprises forming a precursor material comprising group IB-chalcogenide and/or group IIIA-chalcogenide particles, wherein an overall amount of chalcogen in the particles relative to an overall amount of chalcogen in a group IB-IIIA-chalcogenide film created from the precursor material, is at a ratio that provides an excess amount of chalcogen in the precursor material. The excess amount of chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form the group IB-IIIA-chalcogenide film at a desired stoichiometric ratio, wherein the excess amount of chalcogen in the precursor material is an amount greater than or equal to a stoichiometric amount found in the IB-IIIA-chalcogenide film.

Abstract: Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, wherein the precursor layer comprises one or more discrete layers. The layers may include at least a first layer containing one or more group IB elements and two or more different group IIIA elements and at least a second layer containing elemental chalcogen particles. The precursor layer may be heated to a temperature sufficient to melt the chalcogen particles and to react the chalcogen particles with the one or more group IB elements and group IIIA elements in the precursor layer to form a film of a group IB-IIIA-chalcogenide compound.

Abstract: Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, a solar cell is provided that comprises of a substrate, a back electrode formed over the substrate, a p-type semiconductor thin film formed over the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type semiconductor thin film, and a transparent electrode formed over the n-type semiconductor thin film. The p-type semiconductor thin film results by processing a dense film formed from a plurality of microflakes having a material composition containing at least one element from Groups IB, IIIA, and/or VIA, wherein the dense film has a void volume of about 26% or less. The dense film may be a substantially void free film.

Abstract: Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes are particularly useful in forming photovoltaic devices.

Abstract: Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.

Abstract: Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.