Abstract: A processing device includes a plurality of walls defining an interior space configured to be exposed to plasma and a surface coating on the interior surface of at least one of the plurality of walls. The surface coating includes pores forming interconnected porosity. The processing device further includes a sealant residing in at least a portion of the pores of the surface coating. In an embodiment, the sealant can be a thermally cured sealant having a cure temperature not greater than about 100° C. In another embodiment, the sealant can be an epoxy sealant having a viscosity of not greater than 500 cP in liquid precursor form. In yet another embodiment, the sealant can be a low shrinkage sealant characterized by a solidification shrinkage of not greater than 8%.

Abstract: This invention relates to a dense ceramics having ESD dissipative characteristics, tunable volume and surface resistivities in semi-insulative range (103-1011 Ohm-cm), substantially pore free, high flexural strength, light colors, for desired ESD dissipation characteristics, structural reliability, high vision recognition, low wear and particulate contamination to be used as ESD dissipating tools, fixtures, load bearing elements, work surfaces, containers in manufacturing and assembling electrostatically sensitive microelectronic, electromagnetic, electro-optic components, devices and systems.

Abstract: A composite material includes a polymer and a colloidal metal oxide. The composite material has a Plasma Etch Index of 40 relative to a polymer absent the colloidal metal oxide.

Abstract: An electrostatic chuck includes an insulating layer, a conductive layer overlying the insulating layer, a dielectric layer overlying the conductive layer, the dielectric layer having pores forming interconnected porosity, and a cured polymer infiltrant residing in the pores of the dielectric layer.

Abstract: A method of changing the crystallographic orientation of a single crystal body is disclosed that includes the steps of characterizing a crystallographic orientation of the single crystal body and calculating a misorientation angle between a select crystallographic direction of the single crystal body and a projection of the crystallographic direction along a plane of a first exterior major surface of the single crystal body. The method further includes removing material from at least a portion of the first exterior major surface to change the misorientation angle.

Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.

Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.

Abstract: An electrostatic chuck is disclosed which includes a substrate, a patterned conductive layer overlying the substrate, such that the patterned conductive layer is defining electrode pathways separated by gaps. The electrostatic chuck also includes a resistive layer overlying the patterned conductive layer and a low-k dielectric layer overlying the substrate and disposed in the gaps between the electrode pathways. The low-k dielectric layer includes a material having a different phase than the material of the substrate.

Abstract: A Coulombic electrostatic chuck is disclosed which includes a substrate, a conductive layer overlying the substrate, and an arc elimination layer overlying the conductive layer. The electrostatic chuck further includes a high-k dielectric layer overlying the arc elimination layer, wherein the high-k dielectric layer has a dielectric constant of not less than about 10 and a resistivity of not less than about 1011 Ohm-cm.

Abstract: An article is provided that includes a substrate and a corrosion-resistant coating provided on the substrate. The substrate generally consists essentially of alumina, and the corrosion-resistant coating is provided so as to directly contact the substrate without the provision of intervening layers between the substrate and the corrosion-resistant coating, such as reaction products provided by high-temperature treatment processes. The corrosion-resistant coating generally consists essentially of a rare earth oxide, and has an adhesion strength not less than about 15 MPa. According to particular embodiments, the article is a ceramic component utilized and implemented in a semiconductor processing apparatus for processing semiconductor wafers.

Abstract: A susceptor for holding a single crystal wafer for LED production is provided which includes a susceptor body having a recess for receiving a single crystal wafer, wherein the recess has a surface having a surface roughness (Rmax) of not greater than about 10 microns. The susceptor body also includes silicon impregnated silicon carbide and a nitride layer overlying the susceptor body.

Abstract: An article is provided that includes a substrate and a corrosion-resistant coating provided on the substrate. The substrate generally consists essentially of alumina, and the corrosion-resistant coating is provided so as to directly contact the substrate without the provision of intervening layers between the substrate and the corrosion-resistant coating, such as reaction products provided by high-temperature treatment processes. The corrosion-resistant coating generally consists essentially of a rare earth oxide, and has an adhesion strength not less than about 15 MPa. According to particular embodiments, the article is a ceramic component utilized and implemented in a semiconductor processing apparatus for processing semiconductor wafers.

Abstract: ESD safe ceramic component is provided which includes a sintered composition which is formed of a base material and a resistivity modifier. The base material includes a primary component and a secondary component, the primary component including Al2O3 and the secondary component including tetragonal-ZrO2.

Abstract: ESD safe ceramic component is provided which includes a sintered composition which is formed of a base material and a resistivity modifier. The base material includes a primary component and a secondary component, the primary component including Al2O3 and the secondary component including tetragonal-ZrO2.

Abstract: This invention relates to a dense ceramics having ESD dissipative characteristics, tunable volume and surface resistivities in semi-insulative range (103-1011 Ohm-cm), substantially pore free, high flexural strength, light colors, for desired ESD dissipation characteristics, structural reliability, high vision recognition, low wear and particulate contamination to be used as ESD dissipating tools, fixtures, load bearing elements, work surfaces, containers in manufacturing and assembling electrostatically sensitive microelectronic, electromagnetic, electro-optic components, devices and systems.

Abstract: Aspects of the present invention may be found in an electrostatic dissipative ceramic component having a stabilized zirconia base, a surface resistivity between 1×105 and 1×1012 ohms per square and at least 2 percent by volume scattering material. The stabilized zirconia may be present in amounts between 60 and 95 weight percent. Further aspects of the invention may be found in an electrostatic dissipative ceramic material having stabilized zirconia, a resistivity modifier, and a scattering material. The stabilized zirconia may be present in amounts between 60 and 95 weight percent of the ceramic material. The resistivity modifier may be present in amounts between 5 and 30 weight percent. The scattering material may comprise at least 2 volume percent of the electrostatic dissipative ceramic material. The component may be used in the manufacturing of electronic component such as hard drives.

Abstract: ESD safe ceramic component is provided which includes a sintered composition which is formed of a base material and a resistivity modifier. The base material includes a primary component and a secondary component, the primary component including Al2O3 and the secondary component including tetragonal-ZrO2.

Abstract: A semiconductor processing component includes a substrate and a layer overlying the substrate. The layer has a composition ReAyO1.5+2y, wherein Re is Y, La, a Lanthanoid series element, or a combination thereof, A is (Si1?aGea), 0.25?y?1.2, and 0?a?1.

Abstract: This invention relates to a dense ceramics having ESD dissipative characteristics, tunable volume and surface resistivities in semi-insulative range (103-1011 Ohm-cm), substantially pore free, high flexural strength, light colors, for desired ESD dissipation characteristics, structural reliability, high vision recognition, low wear and particulate contamination to be used as ESD dissipating tools, fixtures, load bearing elements, work surfaces, containers in manufacturing and assembling electrostatically sensitive microelectronic, electromagnetic, electro-optic components, devices and systems.

Abstract: Aspects of the present invention may be found in an electrostatic dissipative ceramic component having a stabilized zirconia base, a surface resistivity between 1×105 and 1×1012 ohms per square and at least 2 percent by volume scattering material. The stabilized zirconia may be present in amounts between 60 and 95 weight percent. Further aspects of the invention may be found in an electrostatic dissipative ceramic material having stabilized zirconia, a resistivity modifier, and a scattering material. The stabilized zirconia may be present in amounts between 60 and 95 weight percent of the ceramic material. The resistivity modifier may be present in amounts between 5 and 30 weight percent. The scattering material may comprise at least 2 volume percent of the electrostatic dissipative ceramic material. The component may be used in the manufacturing of electronic component such as hard drives.