Patents by Inventor Matthew A. Wright

Matthew A. Wright has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Systems and methods for enhancing efficacy of ultrasound treatment
    Patent number: 12521574
    Abstract: Embodiments are provided that enhance ultrasound efficacy by for example, high efficiency, signal measurement, calibration, and assurance systems with a control system radio-frequency (RE) driver configured to drive one or more focused ultrasound transducers. The RE driver can comprise one or more power amplifiers including one or more III-V semiconductors, (e.g., gallium nitride GaN, GaAs, GaSb, InP, InAs, InSb, InGaAs, AlSb, AlGaAs, and/or AlGaN) field-effect transistors to efficiently provide high power with distinct narrow-band RE signals over a wide frequency range. The RE driver can include a power measurement and/or calibration system to monitor the amplitude and phase of the RE signal output from the power amplifier and estimate the amount of RE power delivered to the ultrasound transducers.
    Type: Grant
    Filed: November 25, 2019
    Date of Patent: January 13, 2026
    Assignee: Ulthera, Inc.
    Inventors: Charles D. Emery, Wohsing P. Chen, Robert B. A. Adamson, Peeter Hugo Vihvelin, Daniel Zaenker, Nicholas A. Campbell, Matthew A. Wright, Jeffrey R. Leadbetter, Jeremy A. Brown
  • SYSTEMS AND METHODS FOR ENHANCING EFFICACY OF ULTRASOUND TREATMENT
    Publication number: 20250325842
    Abstract: Embodiments are provided that enhance ultrasound efficacy by for example, high efficiency, signal measurement, calibration, and assurance systems with a control system radio-frequency (RF) driver configured to drive one or more focused ultrasound transducers. The RF driver can comprise one or more power amplifiers including one or more III-V semiconductors, (e.g., gallium nitride GaN, GaAs, GaSb, InP, InAs, InSb, InGaAs, AlSb, AlGaAs, and/or AlGaN) field-effect transistors to efficiently provide high power with distinct narrow-band RF signals over a wide frequency range. The RF driver can include a power measurement and/or calibration system to monitor the amplitude and phase of the RF signal output from the power amplifier and estimate the amount of RF power delivered to the ultrasound transducers.
    Type: Application
    Filed: January 17, 2025
    Publication date: October 23, 2025
    Inventors: Charles D. Emery, Wohsing P. Chen, Robert B. A. Adamson, Peeter Hugo Vihvelin, Daniel Zaenker, Nicholas A. Campbell, Matthew A. Wright, Jeffrey R. Leadbetter, Jeremy A. Brown
  • SYSTEMS AND METHODS FOR ENHANCING EFFICACY OF ULTRASOUND TREATMENT
    Publication number: 20220023670
    Abstract: Embodiments are provided that enhance ultrasound efficacy by for example, high efficiency, signal measurement, calibration, and assurance systems with a control system radio-frequency (RE) driver configured to drive one or more focused ultrasound transducers. The RE driver can comprise one or more power amplifiers including one or more III-V semiconductors, (e.g., gallium nitride GaN, GaAs, GaSb, InP, InAs, InSb, InGaAs, AlSb, AlGaAs, and/or AlGaN) field-effect transistors to efficiently provide high power with distinct narrow-band RE signals over a wide frequency range. The RE driver can include a power measurement and/or calibration system to monitor the amplitude and phase of the RE signal output from the power amplifier and estimate the amount of RE power delivered to the ultrasound transducers.
    Type: Application
    Filed: November 25, 2019
    Publication date: January 27, 2022
    Inventors: Charles D. Emery, Wohsing P. Chen, Robert B. A. Adamson, Peeter Hugo Vihvelin, Daniel Zaenker, Nicholas A. Campbell, Matthew A. Wright, Jeffrey R. Leadbetter, Jeremy A. Brown