Abstract: Techniques for a modeling platform associated with simulating risk models. According to certain aspects, systems and methods include simulating the impact of qualitative assumptions on the risk model. Accordingly, the risk model may include a hierarchical tree formed of component qualitative assumption objects and quantitative assumption objects. Quantitative assumption objects include indications of distribution function parameters associated with the assumption object and qualitative assumption objects include an indication of an impact on a parent quantitative assumption. When simulating the risk model, systems and methods may adjust sampled values quantitative assumption object when a child qualitative assumption object is enabled.

Abstract: A virtual network provider system supports a virtual network including virtual machines that are each assigned to an underlay address of an underlay addressing scheme. The virtual network provider system further includes multiple routing domains each defined to include a different subset of the virtual machines. Each of the routing domains is assigned to a range of overlay addresses of an overlay addressing scheme. For each routing domain, the assigned range of overlay addresses is allocated among the subset of the virtual machines in the routing domain. The system further includes a virtual network host configured to use addresses of the overlay addressing scheme to selectively route messages between endpoints on select pairs of the virtual machines assigned to a same routing domain of the plurality of routing domains.

Abstract: A compound of formula I having the structure: or a pharmaceutically acceptable salt thereof, wherein A1 and A2 are independently O or S; X is selected from CH2, CD2, NR3, O, and S, where R3 is selected from hydrogen, C1-C4 linear or branched chain alkyl, halo(C1-C4)linear or branched chain alkyl, and hydroxyl(C1-C4)linear or branched chain alkyl; Y and Z are selected from C and N, where when Y is C, then Z is N, and when Y is N, then Z is C; R1 and R2 are independently selected from hydrogen, deuterium, C1-C4 linear or branched chain alkyl, etc.; or a C1-C2 alkyl substituted with a C3-C5 cycloalkyl ring; or taken together to form a C3-C6 cycloalkyl ring; or where X is CH2 or CD2, then R1 and R2 are independently selected from hydrogen, deuterium, halogen, hydroxyl, C1-C4 linear or branched chain alkyl, etc.; R4 is selected from hydrogen, deuterium, cyano, halogen, (C1-C3) alkoxy, etc.; R5 is selected from hydrogen, deuterium, halogen, C1-C3 alkoxy, amino, (C1-C4 linear or branched chain alkyl)amino, etc.

Abstract: Binding members for alpha chain of receptor for granulocyte macrophage colony stimulating factor (GM-CSFR?), especially antibody molecules. Use of the binding members in treating inflammatory and autoimmune diseases, e.g. rheumatoid arthritis, asthma, allergic response, multiple sclerosis, myeloid leukaemia and atherosclerosis.

Abstract: Technologies for a field effect transistor (FET) with a ferroelectric gate dielectric are disclosed. In an illustrative embodiment, a perovskite stack is grown on a buffer layer as part of manufacturing a transistor. The perovskite stack includes one or more doped semiconductor layers alternating with other lattice-matched layers. Growing the doped semiconductor layers on lattice-matched layers can improve the quality of the doped semiconductor layers. The lattice-matched layers can be etched away, leaving the doped semiconductor layers as fins for a ribbon FET. A ferroelectric layer can be conformally grown on the fins, creating a high-quality ferroelectric layer above and below the fins. A gate can then be grown on the ferroelectric layer.

Abstract: Described herein are compounds that are derivatives of DMT or 5-MeO-DMT and can be metabolically converted to N,N-dimethyltryptamine or analogs thereof upon administration to a subject. In certain embodiments, the compounds described herein are useful for the treatment of conditions associated with a neurological disease.

Abstract: Technologies for a field effect transistor (FET) with a ferroelectric gate dielectric are disclosed. In an illustrative embodiment, a perovskite stack is grown on a buffer layer as part of manufacturing a transistor. The perovskite stack includes one or more doped semiconductor layers alternating with other lattice-matched layers, such as undoped semiconductor layers. Growing the doped semiconductor layers on lattice-matched layers can improve the quality of the doped semiconductor layers. The lattice-matched layers can be preferentially etched away, leaving the doped semiconductor layers as fins for a ribbon FET. In another embodiment, an interlayer can be deposited on top of a semiconductor layer, and a ferroelectric layer can be deposited on the interlayer. The interlayer can bridge a gap in lattice parameters between the semiconductor layer and the ferroelectric layer.

Abstract: Technologies for a transistor with a thin-film ferroelectric gate dielectric are disclosed. In the illustrative embodiment, a transistor has a thin layer of scandium aluminum nitride (ScxAl1-xN) ferroelectric gate dielectric. The channel of the transistor may be, e.g., gallium nitride or molybdenum disulfide. In one embodiment, the ferroelectric polarization changes when voltage is applied and removed from a gate electrode, facilitating switching of the transistor at a lower applied voltage. In another embodiment, the ferroelectric polarization of a gate dielectric of a transistor changes when the voltage is past a positive threshold value or a negative threshold value. Such a transistor can be used as a one-transistor memory cell.

Abstract: In one embodiment, transistor device includes a first source or drain material on a substrate, a semiconductor material on the first source or drain material, a second source or drain material on the semiconductor material, a dielectric layer on the substrate and adjacent the first source or drain material, a ferroelectric (FE) material on the dielectric layer and adjacent the semiconductor material, and a gate material on or adjacent to the FE material. The FE material may be a perovskite material and may have a lattice parameter that is less than a lattice parameter of the semiconductor material.

Abstract: A dose counting system of an injection device or of a module configured to be used with or applied to an injection device is described. The dose counting system includes a sensor arrangement including a first sensor configured to output a first signal and a second sensor configured to output a second signal; and a processor configured to: detect a peak in the first signal when the first signal has increased by at least a predefined up threshold and the first signal exceeds the value of the second signal by more than a predetermined crossover threshold; determine that a unit of medicament has been administered when the first signal drops from the peak by more than a predefined down threshold and the preceding peak occurred in the second signal; and determine a medicament dosage administered by the injection device by counting the administered units of medicament.

Abstract: An example of a pixel module comprises a module substrate having light emitters disposed on a light-emitter surface and a controller disposed on a controller surface opposed to the light-emitter surface. At least one module electrode is electrically connected to the controller and at least one module electrode is electrically connected to each light emitter. An example of a pixel-module wafer comprises a module source wafer comprising sacrificial portions and module anchors, each sacrificial portion laterally separated from an adjacent sacrificial portion by a module anchor and a pixel module disposed entirely over each sacrificial portion. At least one module tether physically connects each of the pixel modules to at least one of the module anchors. An example of a pixel-module display comprises a display substrate, pixel modules disposed on the display substrate and display electrodes disposed on the display substrate, each display electrode electrically connected to a module electrode.

Abstract: Traffic is received at a distributed cloud computing network. The traffic originates from a computing device using a mobile data connection. The traffic is associated with an identifier that identifies a SIM of the computing device. Using the SIM identifier, an identity for identity-based policy enforcement at the distributed cloud computing network is determined. The identity is uniquely associated with the SIM identifier. An identity-based policy that is applicable for the received traffic for the determined identity is determined. The identity-based policy is enforced.

Abstract: In some examples, an apparatus can include a syringe body including an electrical interface at a side surface of the syringe body, an interface at an end of the syringe body including an output at a distal surface of the syringe body, a print material particles reservoir located in the syringe body, and a structure to adapt a volume of the print material particles reservoir to move print material particles out of the print material particles reservoir through the output, where in response to the volume adapting structure moving from a first position to a second position, a signal is transmitted by the electrical interface.

Abstract: A system for cooling a hermetic motor includes a motor cooling refrigerant flow path configured to direct refrigerant from a condenser disposed along a refrigerant loop to a hermetic motor, and from the hermetic motor back to the refrigerant loop, and a housing of the hermetic motor disposed along the motor cooling refrigerant flow path and configured to receive the refrigerant from the condenser, wherein the housing of the hermetic motor comprises an annulus surrounding at least a portion of a stator of the hermetic motor, and wherein the annulus comprises a plurality of openings configured to direct refrigerant toward the stator and into a cavity of the housing of the hermetic motor.

Abstract: In one embodiment, a transistor device includes a gate material layer on a substrate, a ferroelectric (FE) material layer on the gate material, a semiconductor channel material layer on the FE material layer, a first source/drain material on the FE material layer and adjacent the semiconductor channel material layer, and a second source/drain material on the FE material layer and adjacent the semiconductor channel material layer and on an opposite side of the semiconductor channel material layer from the first source/drain material. A first portion of the FE material layer is directly between the gate material and the first source/drain material, and a second portion of the FE material layer is directly between the gate material and the second source/drain material.

Abstract: Described implementations obtain credential information including an encrypted digital identity (ID). The encrypted digital ID may include a public component of a credential and identity data. Furthermore, the credential information may include cryptographically obfuscated data based on the identity data and a private component of the credential. A proof is obtained that includes proof data. The proof data may confirm that the credential information was correctly generated. Verification of the proof data, and confirmation that the cryptographically obfuscated data is not associated in a collection of cryptographically obfuscated data, cause a computer-implemented service to issue a pseudonym. The pseudonym is usable to generate a relationship associated with a computer-implemented service.

Abstract: Aspects of the disclosure are directed to protecting non-public data used in computer-based trials. Reports can be generated based on the computer-based trials that contain performance metrics or other data points to evaluate the computer-based trials. The reports can be viewed by data providers and/or trial providers without divulging the non-public data. Data providers can provide the non-public data for running the computer-based trials. Trial providers can run the computer-based trials. A cloud provider can provide infrastructure for storing source code for the computer-based trials, the non-public data, and reports generated from the computer-based trials. The cloud provider can also provide infrastructure for executing the computer-based trials and generating the reports from the computer-based trials.

Abstract: Techniques for a modeling platform associated with simulating risk models. According to certain aspects, systems and methods include simulating the risk model over time. The risk model may include a hierarchical tree formed of component assumption objects associated with distribution functions. The systems and methods may apply a time function to generate time-adjusted values for the component assumption objects corresponding to defined distribution functions. The systems and methods may then combine the time-adjusted values to generate time-adjusted values for parent assumption objects.

Abstract: A micro-transfer structure comprises a stamp comprising a rigid support, only a single contiguous bulk layer disposed on the rigid support, and posts disposed on the bulk layer. Components are adhered to (e.g., disposed in contact with) some but not all of the posts. The posts can be substantially identical and disposed in a regular array on the bulk layer. Each component is adhered to (e.g., in contact with) two or more posts. Components can be disposed on a source wafer entirely over sacrificial portions of a sacrificial layer on or in the source wafer and attached to anchors disposed between sacrificial portions with a tether.