Abstract: A method of forming a semiconductor device by obtaining a substrate, with a first surface and a second surface, where the substrate has a first material and a second material separated by an etch stop. A membrane film is deposited on the first surface of the substrate and the substrate is patterned to form an opening through the second surface and through the second material to the etch stop layer. The etch stop layer and the first material in the opening are then patterned to form the semiconductor device. This method may be used to form a lithographic mask and further embodiments of the present invention.

Abstract: A mask (300) for scattering angular limited projection electron beam lithography, including a substrate (102) having an opening (103) extending into the substrate, a membrane layer (204) extending over the substrate, the membrane layer including a window portion (209) that overlies an opening in the substrate and being formed of a material having a first electron scattering power, a patterned scattering layer overlying the membrane layer, at least along the window portion of the membrane layer, the patterned scattering layer being formed of a material having a second electron scattering power that is greater than the first electron scattering power, and an encapsulating layer (210) overlying the patterned scattering layer, the encapsulating layer having a third electron scattering power that is less than the second electron scattering power.