Abstract: The present disclosure describes an optical stack that includes an asymmetric diffuser. As described herein, use of an asymmetric diffuser in an optical stack reduces undesirable defects in a display while maintaining optical gain and/or contrast of the display. The asymmetric diffuser is less diffusive along a first direction that is parallel with linearly extending structures of an associated light directing film.

Abstract: Optical film stacks are described. More particularly, optical film stacks including a half-wave retardation layer are described. Achromatic half-wave retardation layers, including achromatic half-wave layers formed from a quarter-wave and a three-quarters-wave retardation layer, are described. Film stacks including reflective polarizers tuned to reduce wavelength dispersion of the half-wave retardation layer are also described.

Abstract: A backlight that includes an illumination device that has at least one light source, a circular-mode reflective polarizer, and a specular partial reflector is disclosed. The specular partial reflector is disposed between the illumination device and the circular-mode reflective polarizer. Furthermore, the specular partial reflector is in substantially direct polarization communication with the circular-mode reflective polarizer.

Abstract: Thermoplastic birefringent multilayer optical films are described. More particularly, thermoplastic multilayer films having alternating first and second layers having a linear layer profile where both outer layers are thinner than 350 nm but thicker than 150 nm are described. Thermoplastic birefringent multilayer optical films with thinner outer protective boundary layers are described.

Abstract: Multilayer reflective polarizers are described. More particularly, multilayer reflective polarizers having a higher block light transmission at longer wavelengths than shorter wavelengths while having a high pass light transmission are described. The described multilayer reflective polarizers may be combined with absorbing polarizers or used in display devices.

Abstract: A tunable semiconductor laser having, in one embodiment, a higher bias voltage end, a lower bias voltage end, and an optically active gain region comprising a band-gap configured to emit light at an emission wavelength that is tunable when an electric field is generated across the optically active gain region by applying a bias voltage thereto, an electron quantum well (QW) layer positioned closer to the higher bias voltage end than the lower voltage bias end, and a hole QW layer positioned closer to the lower bias voltage end than the higher bias voltage end and comprising a type-II band alignment with the electron QW layer such that the band-gap is determined by an energy difference between a ground electron state in the electron QW layer and a ground hole state in the hole QW layer, wherein the emission wavelength is redshifted upon an increase in a bias voltage applied to the optically active gain region.

Abstract: A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

Abstract: A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

Abstract: An optical film including a thermoplastic birefringent multilayer optical film and a UV-cured layer disposed adjacent an outer layer of the multilayer optical film is described. The outer layer has a thickness in a range of about 0.5 micrometers to about 1.0 micrometers and the UV-cured layer includes a structured surface opposite the outer layer. The UV-cured layer has a Tg less than about 30° C. and has a pencil hardness in a range of 2B to 2H.

Abstract: A photovoltaic (PV) device, comprising a PV interband cascade (IC) stage, wherein the IC PV stage comprises an absorption region with a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier. An IC PV architecture for a photovoltaic device, the IC PV architecture comprising an absorption region, an intraband transport region coupled to the absorption region, and an interband tunneling region coupled to the intraband transport region and to the adjacent absorption region, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.

Abstract: A tunable semiconductor laser having, in one embodiment, a higher bias voltage end, a lower bias voltage end, and an optically active gain region comprising a band-gap configured to emit light at an emission wavelength that is tunable when an electric field is generated across the optically active gain region by applying a bias voltage thereto, an electron quantum well (QW) layer positioned closer to the higher bias voltage end than the lower voltage bias end, and a hole QW layer positioned closer to the lower bias voltage end than the higher bias voltage end and comprising a type-II band alignment with the electron QW layer such that the band-gap is determined by an energy difference between a ground electron state in the electron QW layer and a ground hole state in the hole QW layer, wherein the emission wavelength is redshifted upon an increase in a bias voltage applied to the optically active gain region.

Abstract: A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

Abstract: A backlight that includes an illumination device that has at least one light source, a circular-mode reflective polarizer, and a specular partial reflector is disclosed. The specular partial reflector is disposed between the illumination device and the circular-mode reflective polarizer. Furthermore, the specular partial reflector is in substantially direct polarization communication with the circular-mode reflective polarizer.

Abstract: The present disclosure describes an optical stack that includes an asymmetric diffuser. As described herein, use of an asymmetric diffuser in an optical stack reduces undesirable defects in a display while maintaining optical gain and/or contrast of the display.

Abstract: A backlight that includes an illumination device that has at least one light source, a circular-mode reflective polarizer, and a specular partial reflector is disclosed. The specular partial reflector is disposed between the illumination device and the circular-mode reflective polarizer. Furthermore, the specular partial reflector is in substantially direct polarization communication with the circular-mode reflective polarizer.

Abstract: A photovoltaic (PV) device, comprising a PV interband cascade (IC) stage, wherein the IC PV stage comprises an absorption region with a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier. An IC PV architecture for a photovoltaic device, the IC PV architecture comprising an absorption region, an intraband transport region coupled to the absorption region, and an interband tunneling region coupled to the intraband transport region and to the adjacent absorption region, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.

Abstract: A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

Abstract: Films having a structured surface with an engineered feature, such as prism grooves, to be used in displays having a backlight. The films can be arranged in a stack having one or more of the following: birefringent brightness enhancement films, non-birefringent brightness enhancement films, polarizers, diffusers, birefringent turning films, and non-birefringent turning films. Those films can be arranged in any order from the backlight to a viewer.

Abstract: Modified copolyesters having relatively low refractive indices and relatively high glass transition temperatures are disclosed. These modified copolyesters can be used in forming one or more layers in an optical film, such as a multilayer polymer film.

Abstract: Modified copolyesters having relatively low refractive indices and relatively high glass transition temperatures are disclosed. These modified copolyesters can be used in forming one or more layers in an optical film, such as a multilayer polymer film.