Abstract: A thermocompression bonding system for bonding semiconductor elements is provided. The thermocompression bonding system includes (1) a bond head assembly including a heater for heating an semiconductor element to be bonded, the bond head assembly including a fluid path configured to receive a cooling fluid; (2) a pressurized cooling fluid source; (3) a booster pump for receiving a pressurized cooling fluid from the pressurized cooling fluid source, and for increasing a pressure of the received pressurized cooling fluid; (4) a pressurized fluid reservoir for receiving pressurized cooling fluid from the booster pump; and (5) a control valve for controlling a supply of pressurized cooling fluid from the pressurized fluid reservoir to the fluid path.

Abstract: A bond head assembly for bonding a semiconductor element to a substrate is provided. The bond head assembly includes a base structure, a heater, and a clamping system securing the heater to the base structure. The clamping system includes a plurality of elastic elements constraining the heater along a plurality of axes.

Abstract: A method of operating a bonding machine is provided. The method includes the steps of: (a) carrying a semiconductor element with a transfer tool; and (b) transferring the semiconductor element from the transfer tool to a bonding tool of the bonding machine without the transfer tool and the bonding tool contacting the semiconductor element at the same time.

Abstract: A bond head assembly for bonding a semiconductor element to a substrate is provided. The bond head assembly includes a base structure, a heater, and a clamping system securing the heater to the base structure. The clamping system includes a plurality of elastic elements constraining the heater along a plurality of axes.

Abstract: A method of operating a thermocompression bonding system is provided. The method includes the steps of: (a) applying a first level of bond force to a semiconductor element while first conductive structures of the semiconductor element are in contact with second conductive structures of a substrate in connection with a thermocompression bonding operation; (b) measuring a lateral force related to contact between (i) ones of the first conductive structures and (ii) corresponding ones of the second conductive structures; (c) determining a corrective motion to be applied based on the lateral force measured in step (b); and (d) applying the corrective motion determined in step (c).

Abstract: A bond head for a thermocompression bonder is provided. The bond head includes a tool configured to hold a workpiece to be bonded, a heater configured to heat the workpiece to be bonded, and a chamber proximate the heater. The chamber is configured to receive a cooling fluid for cooling the heater.

Abstract: A method of operating a bonding machine for bonding semiconductor elements is provided. The method includes the steps of: (a) measuring a time based z-axis height measurement characteristic of a bond head assembly during a model bonding process; (b) determining a z-axis adjustment profile for a subsequent bonding process based on the measured time based z-axis height measurement characteristic; and (c) adjusting a z-axis position of the bond head assembly with a z-axis motion system during the subsequent bonding process using the z-axis adjustment profile.

Abstract: A bond head assembly for bonding a semiconductor element to a substrate is provided. The bond head assembly includes a base structure, a heater, and a clamping system securing the heater to the base structure. The clamping system includes a plurality of elastic elements constraining the heater along a plurality of axes.

Abstract: A bonding machine for bonding semiconductor elements, the bonding machine including: a support structure configured to support a substrate; a bond head assembly, the bond head assembly including a bonding tool configured to bond a plurality of semiconductor elements to the substrate; and a calibration tool including a contact portion configured to be positioned between the bonding tool and the support structure, the contact portion configured to be contacted by each of the bonding tool and the support structure simultaneously during a calibration operation.

Abstract: A bond head for a thermocompression bonder is provided. The bond head includes a tool configured to hold a workpiece to be bonded, a heater configured to heat the workpiece to be bonded, and a chamber proximate the heater. The chamber is configured to receive a cooling fluid for cooling the heater.

Abstract: A method of operating a bonding machine for bonding semiconductor elements is provided. The method includes the steps of: (a) measuring a time based z-axis height measurement characteristic of a bond head assembly during a model bonding process; (b) determining a z-axis adjustment profile for a subsequent bonding process based on the measured time based z-axis height measurement characteristic; and (c) adjusting a z-axis position of the bond head assembly with a z-axis motion system during the subsequent bonding process using the z-axis adjustment profile.

Abstract: A bonding machine for bonding semiconductor elements, the bonding machine including: a support structure configured to support a substrate; a bond head assembly, the bond head assembly including a bonding tool configured to bond a plurality of semiconductor elements to the substrate; and a calibration tool including a contact portion configured to be positioned between the bonding tool and the support structure, the contact portion configured to be contacted by each of the bonding tool and the support structure simultaneously during a calibration operation.

Abstract: A method of operating a bonding machine for bonding semiconductor elements is provided. The method includes the steps of: (a) measuring a time based z-axis height measurement characteristic of a bond head assembly during a model bonding process; (b) determining a z-axis adjustment profile for a subsequent bonding process based on the measured time based z-axis height measurement characteristic; and (c) adjusting a z-axis position of the bond head assembly with a z-axis motion system during the subsequent bonding process using the z-axis adjustment profile.

Abstract: A bond head for a thermocompression bonder is provided. The bond head includes a tool configured to hold a workpiece to be bonded, a heater configured to heat the workpiece to be bonded, and a chamber proximate the heater. The chamber is configured to receive a cooling fluid for cooling the heater.

Abstract: A bonding machine for bonding semiconductor elements, the bonding machine including: a support structure configured to support a substrate; a bond head assembly, the bond head assembly including a bonding tool configured to bond a plurality of semiconductor elements to the substrate; and a calibration tool including a contact portion configured to be positioned between the bonding tool and the support structure, the contact portion configured to be contacted by each of the bonding tool and the support structure simultaneously during a calibration operation.

Abstract: A thermocompression bonding system for bonding semiconductor elements is provided. The thermocompression bonding system includes (1) a bond head assembly including a heater for heating an semiconductor element to be bonded, the bond head assembly including a fluid path configured to receive a cooling fluid; (2) a pressurized cooling fluid source; (3) a booster pump for receiving a pressurized cooling fluid from the pressurized cooling fluid source, and for increasing a pressure of the received pressurized cooling fluid; (4) a pressurized fluid reservoir for receiving pressurized cooling fluid from the booster pump; and (5) a control valve for controlling a supply of pressurized cooling fluid from the pressurized fluid reservoir to the fluid path.

Abstract: A bond head for a thermocompression bonder is provided. The bond head includes a tool configured to hold a workpiece to be bonded, a heater configured to heat the workpiece to be bonded, and a chamber proximate the heater. The chamber is configured to receive a cooling fluid for cooling the heater.

Abstract: A method of operating a bonding machine for bonding semiconductor elements is provided. The method includes the steps of: (a) measuring a time based z-axis height measurement characteristic of a bond head assembly during a model bonding process; (b) determining a z-axis adjustment profile for a subsequent bonding process based on the measured time based z-axis height measurement characteristic; and (c) adjusting a z-axis position of the bond head assembly with a z-axis motion system during the subsequent bonding process using the z-axis adjustment profile.

Abstract: A bonding machine for bonding semiconductor elements, the bonding machine including: a support structure configured to support a substrate; a bond head assembly, the bond head assembly including a bonding tool configured to bond a plurality of semiconductor elements to the substrate; and a calibration tool including a contact portion configured to be positioned between the bonding tool and the support structure, the contact portion configured to be contacted by each of the bonding tool and the support structure simultaneously during a calibration operation.

Abstract: A bond head for a thermocompression bonder is provided. The bond head includes a tool configured to hold a workpiece to be bonded, a heater configured to heat the workpiece to be bonded, and a chamber proximate the heater. The chamber is configured to receive a cooling fluid for cooling the heater.