Abstract: This disclosure provides methods and compositions for increasing genome editing and site-directed integration events utilizing guided endonucleases and floral cell-preferred or floral tissue-preferred promoters.

Abstract: The present disclosure relates generally to systems and methods for recycling lead-acid batteries, and more specifically, relates to purifying and recycling the lead content from lead-acid batteries. A system includes a reactor that receives and mixes a lead-bearing material waste, a carboxylate source, and a recycled liquid component to form a leaching mixture yielding a lead carboxylate precipitate. The system also includes a phase separation device coupled to the reactor, wherein the phase separation device isolates the lead carboxylate precipitate from a liquid component of the leaching mixture. The system further includes a closed-loop liquid recycling system coupled to the phase separation device and to the reactor, wherein the closed-loop liquid recycling system receives the liquid component isolated by the phase separation device and recycles a substantial portion of the received liquid component back to the reactor as the recycled liquid component.

Abstract: Embodiments of the present disclosure integrate magnetoelectric nanowire arrays within antenna assemblies to form ultra-compact antennas. An exemplary method comprises using a dielectrophoretic force to orient a magnetoelectric nanowire across an electrode gap separating a pair of electrodes; and transmitting or receiving electromagnetic waves through a magnetoelectric effect of the magnetoelectric nanowire. Other methods, apparatuses, and systems are also presented.

Abstract: Embodiments of the present disclosure integrate magnetoelectric nanowire arrays within antenna assemblies to form ultra-compact antennas. An exemplary nanowire antenna array device comprises a first electrode positioned across a second electrode, wherein an electrode gap separates the first electrode and the second electrode; and a magnetoelectric nanowire connected to the first electrode and the second electrode across the electrode gap without substrate clamping, wherein the nanowire antenna array device receives or transmits electromagnetic waves through the magnetoelectric effect.

Abstract: Embodiments disclosed herein provide methods of using synthetic DNA spike-ins (SDSIs) to detect, prevent, and quantify contamination in amplicon sequencing. These embodiments may, but are not limited to, reveal sample swaps, intra-batch contamination, and, on a larger scale, intra-laboratory contamination. Embodiments disclosed herein also provide synthetic DNA spike-ins for use in amplicon-based sequencing methods.

Abstract: Embodiments of the present disclosure integrate magnetoelectric nanowire arrays within antenna assemblies to form ultra-compact antennas An exemplary nanowire antenna array device comprises a first electrode positioned across a second electrode, wherein an electrode gap separates the first electrode and the second electrode; and a magnetoelectric nanowire connected to the first electrode and the second electrode across the electrode gap without substrate clamping, wherein the nanowire antenna array device receives or transmits electromagnetic waves through the magnetoelectric effect.

Abstract: Embodiments of a magnetic field sensor of the present disclosure includes magnetoelectric nanowires suspended above a substrate across electrodes without substrate clamping. This results in enhanced magnetoelectric coupling by reducing substrate clamping when compared to layered thin-film architectures. Accordingly, the magnetoelectric nanowires of the magnetic field sensor generate a voltage response in the presence of a magnetic field.

Abstract: Disclosed are a system and method comprising: providing a user interface to a user positioned remote from the server; receiving, from the user via the user interface: configuration data to configure a plurality of devices positioned remote from, and in communication with, the server; and rule data including user-defined rules governing one or more processing actions for execution by the server upon receipt by the server of one or more input signals from a first device; storing the configuration and rule data in a memory in association with the server; wherein in response to the server receiving the one or more input signals from the first device, the server determines one or more output signals according to the rule data and the configuration data; and wherein the server causes the one or more output signals to be transmitted to at least one second device to cause an event to occur.

Abstract: Embodiments of a magnetic field sensor of the present disclosure includes magnetoelectric nanowires suspended above a substrate across electrodes without substrate clamping. This results in enhanced magnetoelectric coupling by reducing substrate clamping when compared to layered thin-film architectures. Accordingly, the magnetoelectric nanowires of the magnetic field sensor generate a voltage response in the presence of a magnetic field.

Abstract: A novel method for synthesizing device-quality alloys and ordered phases in a Si—Ge—Sn system uses a UHV-CVD process and reactions of SnD4 with SiH3GeH3. Using the method, single-phase SixSnyGe1-x-y semiconductors (x?0.25, y?0.11) are grown on Si via Ge1-xSnx buffer layers The Ge1-xSnx buffer layers facilitate heteroepitaxial growth of the SixSnyGe1-x-y films and act as compliant templates that can conform structurally and absorb the differential strain imposed by the more rigid Si and Si—Ge—Sn materials. The SiH3GeH3 species was prepared using a new and high yield method that provided high purity semiconductor grade material.

Abstract: A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate. the gaseous precursor comprises SnD4 and high purity H2 of about 15-20% by volume. The gaseous precursor is introduced at a temperature in a range of about 250° C. to about 350° C. Using the process device-quality Sn—Ge materials with tunable bandgaps can be grown directly on Si substrates.

Abstract: A process for is provided for synthesizing a compound having the formula E(GeH3)3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P). GeH3Br and [CH3)3Si]3E are combined under conditions whereby E(GeH3)3 is obtained. The E(GeH3)3 is purified by trap-to-trap fractionation. Yields from about 70% to about 76% can be obtained. The E(GeH3)3 can be used as a gaseous precursor for doping a region of a semiconductor material comprising Ge, SnGe, SiGe and SiGeSn in a chemical vapor deposition reaction chamber.

Abstract: A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD reaction chamber includes introducing into the chamber a gaseous precursor comprising SnD4 under conditions whereby the epitaxial Ge—Sn layer is formed on the substrate. the gaseous precursor comprises SnD4 and high purity H2 of about 15-20% by volume. The gaseous precursor is introduced at a temperature in a range of about 250° C. to about 350° C. Using the process device-quality Sn—Ge materials with tunable bandgaps can be grown directly on Si substrates.

Abstract: A novel method for synthesizing device-quality alloys and ordered phases in a Si—Ge—Sn system uses a UHV-CVD process and reactions of SnD4 with SiH3GeH3. Using the method, single-phase SixSnyGe1-x-y semiconductors (x?0.25, y?0.11) are grown on Si via Ge1-xSnx buffer layers The Ge1-xSnx buffer layers facilitate heteroepitaxial growth of the SixSnyGe1-x-y, films and act as compliant templates that can conform structurally and absorb the differential strain imposed by the more rigid Si and Si—Ge—Sn materials. The SiH3GeH3 species was prepared using a new and high yield method that provided high purity semiconductor grade material.

Abstract: A process for is provided for synthesizing a compound having the formula E(GeH3)3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P). GeH3Br and [CH3)3Si]3E are combined under conditions whereby E(GeH3)3 is obtained. The E(GeH3)3 is purified by trap-to-trap fractionation. Yields from about 70% to about 76% can be obtained. The E(GeH3)3 can be used as a gaseous precursor for doping a region of a semiconductor material comprising Ge, SnGe, SiGe and SiGeSn in a chemical vapor deposition reaction chamber.