Patents by Inventor Matthew Berzins

Matthew Berzins has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11092649
    Abstract: According to one general aspect, an apparatus may include a first power signal having a high voltage. The apparatus may include a second power signal having a low voltage. The apparatus may include a third power signal having a voltage configured to switch between the high voltage and the low voltage. The apparatus may include a latching circuit powered by the first power signal and the second power signal. The apparatus may include a selection circuit configured to select between, at least, a first data signal and a second data signal, and powered by the first power signal, the second power signal, and the third power signal.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: August 17, 2021
    Inventor: Matthew Berzins
  • Patent number: 10819342
    Abstract: A low-power low-setup integrated clock gating (ICG) cell is disclosed. The disclosed ICG cell includes a NOR gate configured to receive an enable (E) signal and a test enable (SE) signal, and to output an EN signal. The ICG cell may include a complex gate configured to receive the EN signal and a clock (CK) signal, and to output a latched enable (ELAT) signal. The ICG cell may further include a NAND gate configured to receive the ELAT signal and the CK signal, and to output an inverted enabled clock (ECKN) signal. The ICG cell may further include an inverter configured to receive the ECKN signal from the NAND gate, and to output an enable clock (ECK) signal.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: October 27, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Matthew Berzins, Lalitkumar Motagi
  • Patent number: 10784198
    Abstract: A semiconductor integrated circuit including a substrate, a series of metal layers, and a series of insulating layers. The metal layers and the insulating layers are alternately arranged in a stack on the substrate. The semiconductor integrated circuit also includes at least two standard cells in the substrate and at least one power rail crossing over boundaries of the at least two standard cells. The power rail includes a vertical section of conductive material extending continuously through at least two vertical levels of the stack. The two vertical levels of the stack include one metal layer and one insulating layer. The insulating layer is above the metal layer.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: September 22, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Rwik Sengupta, Andrew Paul Hoover, Matthew Berzins, Sam Tower, Mark S. Rodder
  • Patent number: 10784864
    Abstract: According to one general aspect, an apparatus may include a latch circuit configured to, depending in part upon a state or at least one enable signal, pass a clock signal to an output signal. The latch circuit may include an input stage controlled by the clock signal and the enable signal(s). The latch may include an output stage configured to produce the output signal. The input and output stages may share a common transistor controlled by the clock signal.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: September 22, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Matthew Berzins, Lalitkumar Motagi, Shyam Agarwal
  • Patent number: 10748889
    Abstract: According to one general aspect, an apparatus may include a metal layer having a metal pitch between metal elements, and a gate electrode layer having a gate pitch between gate electrode elements, wherein the gate electrode pitch is a ratio of the metal pitch. The apparatus may include at least two power rails coupled, by via staples, with the metal layer, wherein the via staples at least partially overlap one or more of the gate electrode elements. The apparatus may include even and odd pluralities of standard cells, each respectively located in even/odd placement sites wherein portions of the standard cells that carry signals within the metal layer do not connect to the via staples.
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: August 18, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Matthew Berzins, Andrew Paul Hoover, Christopher Alan Peura
  • Patent number: 10720204
    Abstract: According to one general aspect, an apparatus may include a flip-flop circuit. The flip-flop circuit may include a selection circuit, a memory element circuit, a clock circuit. The selection circuit to select, as the selected input signal, between at least two input signals. The memory element circuit synchronously controlled by a clock signal, and configured to store the selected input signal. The clock circuit configured to output, at least, an earlier version of the clock signal and a later version of the clock signal. The selection circuit is configured to be synchronously controlled, at least in part, by the earlier version of the clock signal such that the selected input signal is held stable when being read by the memory element circuit.
    Type: Grant
    Filed: March 19, 2019
    Date of Patent: July 21, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Matthew Berzins
  • Patent number: 10607982
    Abstract: A standard cell architecture provides an improved immunity to power-supply voltage-drop, does not induce power-supply voltage drop on a continuous-row power rail of a standard cell, and maintains standard-cell environment compatibility. A circuit includes a first metal layer and a second metal layer that are formed different distances above a substrate. At least one first standard cell drives a first timing signal and includes at least one transistor receiving power from a first power rail in the first metal layer. At least one second standard cell drives a second timing signal and includes at least one transistor receiving power from a second power rail in the second metal layer. The second power rail has both a low peak noise level and a resistance that is lower than that of the first metal layer.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: March 31, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Matthew Berzins, Charles A. Cornell
  • Patent number: 10581410
    Abstract: Apparatuses for a flip-flop are provided. One apparatus for a flip-flop includes a domino logic flip-flop, including a single footer transistor for all nodes in the domino logic flip-flop to be pre-charged, wherein the single footer includes a footer node; and a pre-charge transistor connected to the footer node for pre-charging the footer node before an evaluation cycle. Another apparatus for a flip-flop includes a domino logic flip-flop; and combinatory logic configured to evaluate a complimentary signal in conjunction with circuit events.
    Type: Grant
    Filed: February 8, 2016
    Date of Patent: March 3, 2020
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Matthew Berzins, James Jung Lim
  • Patent number: 10382017
    Abstract: Inventive aspects include a dynamic flip flop, comprising a data independent P-stack feedback circuit. The data independent P-stack feedback circuit may include a first P-type transistor gated by a first dynamic inverted net signal, and a second P-type transistor gated by an inverted clock signal. A drain of the second P-type transistor may be coupled to a source of the first P-type transistor. A source of the second P-type transistor may be coupled to a node that is configured to receive a second dynamic inverted net signal. The source of the second P-type transistor may be directly coupled to the node that is configured to receive the second dynamic inverted net signal instead of a constant power source. The data independent P-stack feedback circuit may include one or more delay stages to eliminate race conditions.
    Type: Grant
    Filed: October 3, 2018
    Date of Patent: August 13, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Matthew Berzins, Sumanth Suraneni
  • Patent number: 10353000
    Abstract: A multi-bit flip-flop includes: a single scan input pin to receive a scan input signal, a plurality of data input pins to receive first and second data input signals, a first scan flip-flop to select one of the scan input signal and the first data input signal as a first selection signal in response to a scan enable signal and to latch the first selection signal to provide a first output signal, a second scan flip-flop to select one of an internal signal corresponding to the first output signal and the second data input signal as a second selection signal in response to the scan enable signal and to latch the second selection signal to provide a second output signal, and a plurality of output pins to output the first and second output signals, wherein scan paths of the first and second scan flip-flops are connected to each other.
    Type: Grant
    Filed: April 5, 2017
    Date of Patent: July 16, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Doo-Seok Yoon, Min-Su Kim, Chung-Hee Kim, Dae-Seong Lee, Hyun Lee, Matthew Berzins, James Lim
  • Patent number: 10298235
    Abstract: Embodiments include an integrated clock gating (ICG) cell. The low power ICG cell may include an input condition determination circuit configured to generate a temporary inverted clock signal and an inverted output signal. The low power ICG cell may include an enable control logic circuit configured to receive the temporary inverted clock signal and the inverted output signal from the input condition determination circuit. The low power ICG cell may include a latch circuit coupled to the enable control logic circuit and configured to latch an input value dependent on at least the inverted output signal and the temporary inverted clock signal. The input condition determination circuit is configured to generate the temporary inverted clock signal only when it is needed.
    Type: Grant
    Filed: June 21, 2017
    Date of Patent: May 21, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: James Jung Lim, Matthew Berzins
  • Patent number: 10262723
    Abstract: According to one general aspect, an apparatus may include a flip-flop circuit. The flip-flop circuit may include a selection circuit, a memory element circuit, a clock circuit. The selection circuit to select, as the selected input signal, between at least two input signals. The memory element circuit synchronously controlled by a clock signal, and configured to store the selected input signal. The clock circuit configured to output, at least, an earlier version of the clock signal and a later version of the clock signal. The selection circuit is configured to be synchronously controlled, at least in part, by the earlier version of the clock signal such that the selected input signal is held stable when being read by the memory element circuit.
    Type: Grant
    Filed: August 17, 2017
    Date of Patent: April 16, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Matthew Berzins
  • Publication number: 20180269152
    Abstract: A semiconductor integrated circuit including a substrate, a series of metal layers, and a series of insulating layers. The metal layers and the insulating layers are alternately arranged in a stack on the substrate. The semiconductor integrated circuit also includes at least two standard cells in the substrate and at least one power rail crossing over boundaries of the at least two standard cells. The power rail includes a vertical section of conductive material extending continuously through at least two vertical levels of the stack. The two vertical levels of the stack include one metal layer and one insulating layer. The insulating layer is above the metal layer.
    Type: Application
    Filed: August 18, 2017
    Publication date: September 20, 2018
    Inventors: Rwik Sengupta, Andrew Paul Hoover, Matthew Berzins, Sam Tower, Mark S. Rodder
  • Patent number: 9904758
    Abstract: According to one general aspect, a method may include receiving a circuit model that includes logic circuits that are represented by respective cells. The method may include providing a timing adjustment to the circuit model. This providing may include determining one or more respective cells that are candidates for adjustment by employing a sub-micron stress effect, and, for each candidate, replacing a candidate cell with a stressed cell, wherein a candidate cell and stressed cell perform a same logical function. Each stressed cell may include: a gate electrode, a first gate-cut shape disposed to cut the gate electrode, wherein the first gate-cut shape is disposed upon a row-boundary, a second gate-cut shape disposed upon the row-boundary, a gate-cut break disposed between the first gate-cut shape and the second gate-cut shape, an active region, and an active-cut shape disposed to cut the active region.
    Type: Grant
    Filed: July 12, 2016
    Date of Patent: February 27, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Matthew Berzins, Andrew Paul Hoover
  • Patent number: 9899990
    Abstract: A semiconductor circuit includes a first circuit and a second circuit. The first circuit determines a logic level of a second node and a logic level of a third node, on the basis of a logic level of input data, a logic level of a clock signal, and a logic level of a first node. The second circuit determines the logic level of the first node, on the basis of the logic level of the clock signal, the logic level of the second node and the logic level of the third node. The first circuit comprises a sub-circuit and a first transistor. The first circuit determines the logic level of the second node, on the basis of the logic level of the input data and the logic level of the first node. The first transistor is gated to the logic level of the clock signal to connect the third node with the second node.
    Type: Grant
    Filed: August 31, 2016
    Date of Patent: February 20, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: San-Ha Kim, Min-Su Kim, Matthew Berzins
  • Patent number: 9891283
    Abstract: A multi-bit flip-flop includes a plurality of multi-bit flip-flop blocks that share a clock signal. Each of the multi-bit flip-flop blocks includes a single inverter and a plurality of flip-flops. The single inverter generates an inverted clock signal by inverting the clock signal. Each of the flip-flops includes a master latch part and a slave latch part and operates the master latch part and the slave latch part based on the clock signal and the inverted clock signal. Here, the flip-flops are triggered at rising edges of the clock signal. Thus, the multi-bit flip-flop operating as a master-slave flip-flop may minimize (or, reduce) power consumption occurring in a clock path through which the clock signal is transmitted.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: February 13, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Min-Su Kim, Matthew Berzins, Jong-Woo Kim
  • Patent number: 9793881
    Abstract: Exemplary embodiments may disclose a flip-flop circuit for inserting a zero-delay bypass mux including a master circuit which is configured to receive a data input, an input clock signal, and a bypass signal, and output an intermediate signal to a first node; and a slave circuit which is configured to receive the intermediate signal at the first node, the input clock signal, and the bypass signal, and output an output clock signal. The bypass signal controls the slave circuit to output one of a buffered input clock signal and a stretched clock signal as the output clock signal based on a logic level of the bypass signal.
    Type: Grant
    Filed: March 10, 2014
    Date of Patent: October 17, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Christina Wells, Matthew Berzins, Min Su Kim
  • Patent number: 9779201
    Abstract: According to one general aspect, a method may include receiving a digital circuit model that includes models of a clock mesh and a plurality of logic circuits, each logic circuit associated with end-points of the logic circuit. The method may also include identifying a cluster of end-points, wherein the cluster is associated with a common version of the clock signal. The method may also include identifying an associated skew-schedule for each end-point. The method may include determining a timing slack and skew schedule for each end-point within the cluster. The method may include adjusting a clock-gater cell, based upon a common push/pull schedule associated with the cluster. The method may further include inserting, for at least one end-point of the cluster, a skew-buffer, wherein a variant of the skew-buffer for a respective end-point is based upon a difference between the end-point's skew schedule and the common push/pull schedule.
    Type: Grant
    Filed: April 14, 2015
    Date of Patent: October 3, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Brian Millar, Ahsan Chowdhury, Suhail Ahmed, Matthew Berzins, Jinkyu Lee
  • Patent number: 9768756
    Abstract: According to one general aspect, an apparatus may include a latch, and a control circuit. The latch may receive an input enable signal and generate a latched enable signal. The latch may also pass the input enable signal to the latched enable signal when the latch is transparent. The control circuit may be electrically coupled to the latch. The control circuit may receive as input an ungated clock signal, and generate a gated clock signal and a latch control signal. The latch control signal may be configured to make the latch transparent when the ungated clock signal is in a predefined state and when one of the input enable signal and the latched enable signal are in an enabled state. The control circuit may be configured to pass the ungated clock signal to the gated clock signal when the latched enable signal is in the enabled state.
    Type: Grant
    Filed: March 23, 2016
    Date of Patent: September 19, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: James Jung Lim, Matthew Berzins
  • Patent number: 9564897
    Abstract: An apparatus for an integrated clock gating cell is provided. The apparatus includes a logic gate that receives an unbuffered enable signal (E), a scan test enable signal (SE), and outputs an inverted enable signal (EN); a first transmission gate that receives E, SE, and EN; a second transmission gate that is connected to the first transmission gate and receives a clock signal (CK) and an enabled and inverted clock signal (ECKN); a first transistor having terminals connected to a power supply voltage (VDD), an output of the logic gate, and the first transmission gate respectively; a second transistor including terminals connected to the first transmission gate and VDD respectively; and a latch including terminals connected to the second transmission gate and the second transistor respectively.
    Type: Grant
    Filed: February 2, 2016
    Date of Patent: February 7, 2017
    Assignee: Samsung Electronics Co., Ltd
    Inventors: Matthew Berzins, James Jung Lim