Abstract: A method of manufacturing an electrode structure for a device, such as a GaN or AlGaN device is described. In one example, the method includes providing a substrate (212) of GaN or AlGaN with a surface region of the GaN or AlGaN exposed through an opening (216) in a layer of silicon nitride (214) formed on the substrate. The method further includes depositing layers of W (222), in one example, or Ni (220) and W (222), in another example, on the substrate and the layer of silicon nitride using reactive evaporation and photoresist layers (230) having an undercut profile for liftoff. The method further includes removing the photoresist layers having the undercut profile, and depositing layers of WN (224) and Al over the underlying layers of W or Ni and W by sputtering.

Abstract: An airflow regulating device includes a first airflow regulator configured to replace a tractor truck's grille, means for adjusting the first airflow regulator between open and closed configurations, a second airflow regulator positioned inside a housing configured to attach atop the truck's cab, means for adjusting the second airflow regulator between open and closed configurations, and means for actuating each adjustment means. The second airflow regulator may embody either a multiple-louver or a nested-panel formation, and a proximity sensor is included in the means to actuate the adjustment means of the second airflow regulator. The first and second actuation means determine whether the first and second airflow regulators should be in the open or closed configurations and actuate the first and second adjustment means accordingly. The first and second adjustment means then adjust the first and second airflow regulators to the appropriate configurations, improving the truck's gas mileage.