Abstract: The present disclosure relates to a composition that includes a perovskite of A2BX4, where A includes an R-form of a chiral molecule of at least one of and/or an S-form of the chiral molecule, B includes a cation, X includes an anion, R1 includes a first carbon chain having between 2 and 5 carbon atoms, R2 includes at least one of a hydrogen atom, a halogen atom, a carboxylic acid group, an alkoxy group, and/or a second carbon chain, and R3 includes a third carbon chain.

Abstract: The present disclosure relates to a composition that includes a perovskite of A2BX4, where A includes an R-form of a chiral molecule of at least one of and/or an S-form of the chiral molecule, B includes a cation, X includes an anion, R1 includes a first carbon chain having between 2 and 5 carbon atoms, R2 includes at least one of a hydrogen atom, a halogen atom, a carboxylic acid group, an alkoxy group, and/or a second carbon chain, and R3 includes a third carbon chain.

Abstract: The present disclosure relates to a composition that includes a first element, a second element, a third element, a ligand, and an anion, where the first element and the second element form a nanocrystal that includes a surface and a crystal lattice, a first portion of the third element covers at least a second portion of the surface in the form of a layer, a third portion of the third element is incorporated into the crystal lattice, and the ligand and the anion are ionically bound to at least one of the second element and/or the first portion of the third element.

Abstract: An aspect of the present disclosure is a nanocrystal that includes a nanocrystal core and a ligand coordinated to a surface of the nanocrystal core, where the ligand includes a functionalized aromatic molecule. In some embodiments of the present disclosure, the functionalized aromatic molecule may include at least one of cinnamic acid (CAH) and/or a functionalized CAH molecule.

Abstract: The present disclosure relates to a composition that includes a first element, a second element, a third element, a ligand, and an anion, where the first element and the second element form a nanocrystal that includes a surface and a crystal lattice, a first portion of the third element covers at least a second portion of the surface in the form of a layer, a third portion of the third element is incorporated into the crystal lattice, and the ligand and the anion are ionically bound to at least one of the second element and/or the first portion of the third element.

Abstract: Methods are described that include reacting a starting nanocrystal that includes a starting nanocrystal core and a covalently bound surface species to create an ion-exchangeable (IE) nanocrystal that includes a surface charge and a first ion-exchangeable (IE) surface ligand ionically bound to the surface charge, where the starting nanocrystal core includes a group IV element.

Abstract: An aspect of the present disclosure is a nanocrystal that includes a nanocrystal core and a ligand coordinated to a surface of the nanocrystal core, where the ligand includes a functionalized aromatic molecule. In some embodiments of the present disclosure, the functionalized aromatic molecule may include at least one of cinnamic acid (CAH) and/or a functionalized CAH molecule.

Abstract: Methods are described that include reacting a starting nanocrystal that includes a starting nanocrystal core and a covalently bound surface species to create an ion-exchangeable (IE) nanocrystal that includes a surface charge and a first ion-exchangeable (IE) surface ligand ionically bound to the surface charge, where the starting nanocrystal core includes a group IV element.

Abstract: Methods of treating nanocrystal and/or quantum dot devices are described. The methods include contacting the nanocrystals and/or quantum dots with a solution including metal ions and halogen ions, such that the solution displaces native ligands present on the surface of the nanocrystals and/or quantum dots via ligand exchange.

Abstract: Methods of treating nanocrystal and/or quantum dot devices are described. The methods include contacting the nanocrystals and/or quantum dots with a solution including metal ions and halogen ions, such that the solution displaces native ligands present on the surface of the nanocrystals and/or quantum dots via ligand exchange.

Abstract: A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

Abstract: A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

Abstract: A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.