Patents by Inventor Matthew C. Nielsen

Matthew C. Nielsen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11587448
    Abstract: Methods and systems for using manifolds learning of airline network traffic to detect airline network traffic disruptions. In an embodiment, a computer processor transmits a request for abnormal airline network traffic simulation data to a simulation device, receives the abnormal airline network traffic simulation data, and generates, utilizing a manifolds learning process, simulated abnormal airline network traffic manifolds representation data. In some embodiments, the process may next include transmitting a request for current airline network traffic data to a current network traffic computer, receiving the current airline network traffic data, and generating a current airline network traffic dataset.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: February 21, 2023
    Assignee: General Electric Company
    Inventors: James G. Lopez, Matthew C. Nielsen
  • Publication number: 20210027635
    Abstract: Methods and systems for using manifolds learning of airline network traffic to detect airline network traffic disruptions. In an embodiment, a computer processor transmits a request for abnormal airline network traffic simulation data to a simulation device, receives the abnormal airline network traffic simulation data, and generates, utilizing a manifolds learning process, simulated abnormal airline network traffic manifolds representation data. In some embodiments, the process may next include transmitting a request for current airline network traffic data to a current network traffic computer, receiving the current airline network traffic data, and generating a current airline network traffic dataset.
    Type: Application
    Filed: July 26, 2019
    Publication date: January 28, 2021
    Inventors: James G. Lopez, Matthew C. Nielsen
  • Patent number: 6883774
    Abstract: A microvalve and a method of forming a microvalve. The microvalve comprises first and second layers, a diaphragm member and a switching means. The first and second layers are secured together to form a valve body that forms an inlet opening for receiving fluid, an outlet opening for conducting fluid from the valve body, and a flow channel for conducting fluid from the inlet to the outlet. The diaphragm is disposed between the layers, and is movable between open and closed positions. In these position, the diaphragm, respectively, allows and blocks the flow of fluid from the inlet to the flow channel. The diaphragm is biased to the closed position, and moves from the closed position to the open position when the pressure of fluid in the inlet reaches a preset value. The switching means is connected to the valve body for moving the diaphragm to the closed position against the pressure of fluid in the inlet.
    Type: Grant
    Filed: October 21, 2002
    Date of Patent: April 26, 2005
    Assignee: Lockheed Martin Corporation
    Inventors: Matthew C. Nielsen, Laura J. Meyer, Todd G. Wetzel, Stanton E. Weaver, Jeffrey B. Fortin, Renato Guida
  • Publication number: 20040256585
    Abstract: A microvalve and a method of forming a microvalve. The microvalve comprises first and second layers, a diaphragm member and a switching means. The first and second layers are secured together to form a valve body that forms an inlet opening for receiving fluid, an outlet opening for conducting fluid from the valve body, and a flow channel for conducting fluid from the inlet to the outlet. The diaphragm is disposed between the layers, and is movable between open and closed positions. In these position, the diaphragm, respectively, allows and blocks the flow of fluid from the inlet to the flow channel. The diaphragm is biased to the closed position, and moves from the closed position to the open position when the pressure of fluid in the inlet reaches a preset value. The switching means is connected to the valve body for moving the diaphragm to the closed position against the pressure of fluid in the inlet.
    Type: Application
    Filed: October 21, 2002
    Publication date: December 23, 2004
    Applicant: Lockheed Martin Corporation
    Inventors: Matthew C. Nielsen, Laura J. Meyer, Todd G. Wetzel, Stanton E. Weaver, Jeffrey B. Fortin, Renato Guida
  • Patent number: 6790779
    Abstract: A method for creating deep features in a Si-containing substrate for use in fabricating MEMS type devices is provided. The method includes first forming a thin Ni hardmask on a surface of a Si-containing substrate. The Ni hardmask is patterned using conventional photolithography and wet etching so as to expose at least one portion of the underlying Si-containing substrate. The at least one exposed portion of the Si-containing substrate, not containing the patterned hardmask, is then etched in a plasma that includes free radicals generated from a gaseous mixture of chlorine (Cl2), sulfur hexafluoride (SF6) and oxygen (O2). The interaction of the gas species in the plasma yields a rapid silicon etch rate that is highly selective to the Ni hardmask. The etch rate ratio of Si to Ni using the inventive method is greater than 250:1.
    Type: Grant
    Filed: July 24, 2002
    Date of Patent: September 14, 2004
    Assignee: Lockheed Martin Corporation
    Inventors: James H. Schermerhorn, Matthew C. Nielsen, Richard J. Saia, Jeffrey B. Fortin
  • Publication number: 20040075368
    Abstract: These and other objectives are attained with a piezoelectric actuator operable over a temperature range, and a method of operating a piezoelectric actuator. The piezoelectric actuator, generally, comprises a support structure, a piezoelectric material supported by the support structuer, and an insert disposed between the support structure and the piezoelectric material. The piezoelectric material and the insert are positioned in series, the piezoelectric material and the insert each have a respective length, and together the piezoelectric material and the insert have a combined length. The length of the piezoelectric material changes in response to a voltage applied to the piezoelectric material. Also, the respective lengths of the piezoelectric material and the insert change, in opposite directions, in response to the same change in temperature, and, in this way, the insert mitigates changes in the combined length of the insert and the piezoelectric material due to temperature changes.
    Type: Application
    Filed: October 21, 2002
    Publication date: April 22, 2004
    Applicant: Lockheed Martin Corporation
    Inventors: Charles E. Seeley, Matthew C. Nielsen, Jeffrey B. Fortin
  • Publication number: 20040018734
    Abstract: A method for creating deep features in a Si-containing substrate for use in fabricating MEMS type devices is provided. The method includes first forming a thin Ni hardmask on a surface of a Si-containing substrate. The Ni hardmask is patterned using conventional photolithography and wet etching so as to expose at least one portion of the underlying Si-containing substrate. The at least one exposed portion of the Si-containing substrate, not containing the patterned hardmask, is then etched in a plasma that includes free radicals generated from a gaseous mixture of chlorine (Cl2), sulfur hexafluoride (SF6) and oxygen (O2). The interaction of the gas species in the plasma yields a rapid silicon etch rate that is highly selective to the Ni hardmask. The etch rate ratio of Si to Ni using the inventive method is greater than 250:1.
    Type: Application
    Filed: July 24, 2002
    Publication date: January 29, 2004
    Applicant: LOCKHEED MARTIN CORPORATION
    Inventors: James H. Schermerhorn, Matthew C. Nielsen, Richard J. Saia, Jeffrey B. Fortin