Abstract: Disclosed are example embodiments of systems and methods for virtual try-on of articles of clothing. An example method of virtual try-on of articles of clothing includes selecting a garment from a pre-existing database. The method also includes loading a photo of a source model wearing the selected garment. Additionally, the method includes generating a semantic segmentation of the model image. The method also includes extracting the selected garment from the photo of the model. Additionally, the method includes determining a correspondence between a target model and the source model by performing a feature point detection and description of the target model and the source model, and performing feature matching and correspondence validation. The method also includes performing garment warping and alignment of the extracted garment. Additionally, the method includes overlaying and rendering the garment.

Abstract: An active radio-frequency (RF) sensing technology for determining the relative and/or absolute state (e.g., position, velocity, and/or acceleration) of a target object (e.g., a person, a car, a truck a lamp post, a utility pole, a building) is described. The sensors described herein operate in the Terahertz band (300 GHz to 3 THz). An active RF sensing device comprises a substrate and first and second semiconductor dies mounted on the substrate. The first semiconductor die has an RF transmit antenna array integrated thereon, and the transmit antenna array comprises a first plurality of RF antennas configured to generate an RF signals having frequency content in the 300 GHz-3 THz band. The second semiconductor die has an RF receive antenna array integrated thereon, and the receive antenna array comprises a second plurality of RF antennas configured to receive RF signals having frequency content in the 300 GHz-3 THz band.

Abstract: An active radio-frequency (RF) sensing technology for determining the relative and/or absolute state (e.g., position, velocity, and/or acceleration) of a target object (e.g., a person, a car, a truck a lamp post, a utility pole, a building) is described. The sensors described herein operate in the Terahertz band (300 GHz to 3 THz). An active RF sensing device comprises a substrate and first and second semiconductor dies mounted on the substrate. The first semiconductor die has an RF transmit antenna array integrated thereon, and the transmit antenna array comprises a first plurality of RF antennas configured to generate an RF signals having frequency content in the 300 GHz-3 THz band. The second semiconductor die has an RF receive antenna array integrated thereon, and the receive antenna array comprises a second plurality of RF antennas configured to receive RF signals having frequency content in the 300 GHz-3 THz band.

Abstract: An active radio-frequency (RF) sensing technology for determining the relative and/or absolute state (e.g., position, velocity, and/or acceleration) of a target object (e.g., a person, a car, a truck a lamp post, a utility pole, a building) is described. The sensors described herein operate in the Terahertz band (300 GHz to 3 THz). An active RF sensing device comprises a substrate and first and second semiconductor dies mounted on the substrate. The first semiconductor die has an RF transmit antenna array integrated thereon, and the transmit antenna array comprises a first plurality of RF antennas configured to generate an RF signals having frequency content in the 300 GHz-3 THz band. The second semiconductor die has an RF receive antenna array integrated thereon, and the receive antenna array comprises a second plurality of RF antennas configured to receive RF signals having frequency content in the 300 GHz-3 THz band.

Abstract: A magnetoresistive memory device includes a first electrode, a second electrode that is spaced from the first electrode, and a perpendicular magnetic tunnel junction layer stack located between the first electrode and the second electrode. The perpendicular magnetic tunnel junction layer stack includes, from one side to another: a reference layer having a fixed reference magnetization direction, a first spinel layer located including a first polycrystalline spinel material having (001) texture along an axial direction that is perpendicular to an interface with the reference layer, a magnesium oxide layer including a polycrystalline magnesium oxide material having (001) texture along the axial direction, a second spinel layer including a second polycrystalline spinel material having (001) texture along the axial direction, and a ferromagnetic free layer.

Abstract: The disclosure concerns tracking a total count of unread messages where an email service manages email messages and a subset of the email messages are also stored locally on a client device. The client device may maintain a local unread count of unread messages stored on the client device, and the email service may maintain a remote unread count of unread messages stored on the email service but not on the client device. The email service may provide the remote unread count to the client device, and the client device may determine the total unread count by adding the local unread count to the remote unread count. The client device may also provide an identifier to the email service, and the email service may use the identifier to determine which of the email messages stored on the email service are not stored on the client device.

Abstract: Systems and methods for facilitating interactions between a medical device (e.g., an imaging device, a surgical tool, a robotic arm, etc.) and a patient using radio frequency (RF) co-localization are provided. The systems include a radio-frequency (RF) interrogator system, one or more first RF target devices for coupling to a patient support for supporting a patient with respect to whom a medical device is to perform a task, and one or more second RF target devices for coupling to the medical device. A controller determines a position of the patient support within an RF interrogator system reference frame, a first position of the medical device within the RF interrogator system reference frame, a transformation between the RF interrogator system reference frame and a patient support reference frame, and a second position of the medical device within the patient support reference frame.

Abstract: A magnetoresistive memory device includes a first electrode, a second electrode that is spaced from the first electrode, and a perpendicular magnetic tunnel junction layer stack located between the first electrode and the second electrode. The perpendicular magnetic tunnel junction layer stack includes, from one side to another: a reference layer having a fixed reference magnetization direction, a first spinel layer located including a first polycrystalline spinel material having (001) texture along an axial direction that is perpendicular to an interface with the reference layer, a magnesium oxide layer including a polycrystalline magnesium oxide material having (001) texture along the axial direction, a second spinel layer including a second polycrystalline spinel material having (001) texture along the axial direction, and a ferromagnetic free layer.

Abstract: Systems and methods for facilitating interactions between a robotic arm and a movable platform using radio frequency (RF) co-localization are provided. The systems include target devices; an interrogator system comprising RF antennas, each of the RF antennas configured to transmit RF signals to the target devices and/or receive RF signals from the target devices; and a controller. The controller is configured to control at least one of the RF antennas to transmit one or more first RF signals to a target device coupled to a movable platform; control at least some of the RF antennas to receive second RF signals from at least the target device; determine a position of the movable platform using the received second RF signals; and determine, using the position of the movable platform, a target position to which to move an end effector of a robotic arm in order to perform a task.

Abstract: Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.

Abstract: Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.

Abstract: Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.

Abstract: Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.

Abstract: The disclosure concerns tracking a total count of unread messages where an email service manages email messages and a subset of the email messages are also stored locally on a client device. The client device may maintain a local unread count of unread messages stored on the client device, and the email service may maintain a remote unread count of unread messages stored on the email service but not on the client device. The email service may provide the remote unread count to the client device, and the client device may determine the total unread count by adding the local unread count to the remote unread count. The client device may also provide an identifier to the email service, and the email service may use the identifier to determine which of the email messages stored on the email service are not stored on the client device.

Abstract: Magnetoelectric or magnetoresistive memory cells include at least one of a high dielectric constant dielectric capping layer and/or a nonmagnetic metal dust layer located between the free layer and the dielectric capping layer.

Abstract: Disclosed herein are novel polypeptides having nuclease activity. The Mmc3 polypeptides function as Class 2 Type V effectors, and catalyze double stranded breaks in nucleic acid strands. The polypeptides are useful, for example, for gene editing systems such as CRISPR, to make site specific alterations of target nucleic acid sequences.

Abstract: A magnetoresistive sensor having a pinned layer that includes a first magnetic layer (AP1) a second magnetic layer (AP2) and an antiparallel coupling layer sandwiched between the AP1 and AP2 layers. The AP1 layer is adjacent to a layer of antiferromagnetic material (AFM layer) and is constructed so as to have a long spin diffusion length. The long spin diffusion length of the AP1 layer minimizes the negative GMR contribution of the AP1 layer, thereby increasing the overall GMR effect of the sensor.

Abstract: A microwave bandstop filter having a magnetic strip formed over dielectric material. The magnetic resonant frequency is controlled by an induced magnetic anisotropy in the magnetic strip of the microwave bandstop filter. The magnetic anisotropy field is induced by an anisotropic surface texture formed on the surface of the magnetic strip itself, or formed on an underlying layer. Alternatively, the anisotropic surface texture could be formed on both an underlying layer and on the magnetic strip itself. This induced magnetic anisotropy field allows the resonant frequency of the microwave filter to be controlled over a wide frequency range and make high frequency operation possible without reliance on the application of an externally applied magnetic field.

Abstract: A magnetoresistive sensor having a magnetically stable free layer fabricated from a material having a positive magnetostriction such as a Co—Fe—B alloy. Although the free layer is fabricated from a material that has a positive magnetostriction, which would ordinarily make the free layer unstable, the magnetization of the free layer remains stable because of an induced magnetic anisotropy that has an easy axis of magnetization oriented parallel to the Air-bearing Surface (ABS). This magnetic anisotropy of the free layer is induced by an anisotropic texturing of the surface of the free layer. The resulting anisotropic surface texture is produced by an ion milling process that utilizes an ion beam directed at an acute angle relative to the normal to the surface of the wafer whereon the sensor is fabricated while the wafer is held on a stationary chuck.

Abstract: A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thicknesses of FL1 and FL2 are chosen to obtain the desired net free layer magnetic moment/area for the sensor, and the thickness of FL1 is preferably chosen to be greater than the spin-diffusion length of the electrons in the FL1 material to maximize the bulk spin-dependent scattering of electrons and thus maximize the sensor signal.