Abstract: A guide tube for an ion beam in an ion implanter which is located adjacent a semiconductor wafer being implanted has an outwardly tapering central bore, thereby alleviating problems of beam strike as the ion beam passes through the guide tube.

Abstract: Components in an ion implanter that may see incidence of the ion beam include a chamber having an elongate slot opening defined by edges so that a central portion of the ion beam enters the component through the opening with the edges clipping at least a peripheral portion of the ion beam. The arrangement mitigates the problem of sputtered material escaping back out from the component and becoming entrained in the ion beam.

Abstract: An instrument for testing an electrical circuit includes a housing, a printed circuit board disposed within the housing, and at least one probe in electrical communication with the printed circuit board. The instrument further includes a plurality of panels disposed within the housing, wherein each one of the plurality of panels has an indicator. Each of the plurality of panels is capable of being activated into an on state in response to an electrical measurement. When at least one of the plurality of panels is activated the indicator on that panel substantially corresponds to a magnitude of the electrical measurement.

Abstract: The present invention relates to components in an ion implanter that may see incidence of the ion beam, such as a beam dump or a beam stop. Such components will be prone to the ions sputtering material from their surfaces, and sputtered material may become entrained in the ion beam. This entrained material is a source of contamination. The present invention provides such components with a chamber having an elongate slot opening defined by edges, and operating the ion implanter such that a central portion of the ion beam enters the component through the opening with the edges clipping at least a peripheral portion of the ion beam. The arrangement mitigates the problem of sputtered material escaping back out from the component and becoming entrained in the ion beam.

Abstract: A guide tube for an ion beam in an ion implanter which is located adjacent a semiconductor wafer being implanted has an outwardly tapering central bore, thereby alleviating problems of beam strike as the ion beam passes through the guide tube.