Abstract: A method for manufacturing at least one vertical transistor First, a substrate is provided, having an upper face, a localized epitaxy of GaN is performed on the substrate, so as to form at least one island, and, at each island, at least one electrically conductive pattern called a gate and at least one electrically conductive contact called a source contact are formed. The substrate is removed, and an electrically conductive layer forming a drain is formed against the lower face of the at least one island, thus forming at least one vertical transistor.

Abstract: A method is provided for manufacturing at least one microelectronic device including a vertical transistor. The method includes providing a substrate having an upper face and performing localized epitaxial growth of gallium nitride on the upper face to form at least one GaN-based island. Each island includes a GaN-based drift layer having opposite upper and lower faces. A first doped GaN-based layer of a first conductivity type is formed on each island to define a plurality of separated doped wells extending from the upper face of the drift layer. An electrically conductive layer forming a drain is electrically connected to the lower face of each GaN-based island, thereby forming at least one vertical transistor.

Abstract: The invention relates to a method for obtaining a layer at least partially made of a nitride (N), first comprising the provision of a stack comprising at least one assembly of pads (1000A1-1000B4) extending from a substrate (100). Each pad comprises at least one creep section (220A1-220A5) and one crystalline section (300A1,300A5) surmounting the creep section (200A1-200A5). Then, a crystallite (510A1-510A5) is epitaxially grown on at least some of said pads until coalescence of the crystallites, so as to form a nitride layer (550A). The pads of the assembly are distributed over the substrate, such that the relative arrangement of the pads of the assembly is such that during the epitaxy of the crystallites, the progressive coalescence of the crystallites is always done between, on the one hand, a crystallite or a plurality of coalesced crystallites and, on the other hand, an isolated crystallite.

Abstract: A load lock system for manufacturing a metal alloy using a feed material includes a process chamber having a controlled atmosphere, a feed chamber in flow communication with the process chamber having controlled atmosphere capabilities configured to contain a quantity of the feed material, and a collection chamber in flow communication with the process chamber having controlled atmosphere capabilities configured to collect the metal alloy manufactured in the process chamber. The system also includes a gate valve between the process chamber and the feed chamber configured to either allow passage of the feed material between the chambers, or to seal the process chamber from the feed chamber. The system also includes a discharge valve between the process chamber and the collection chamber configured to either allow passage of the metal alloy between the chambers, or to seal the process chamber from the collection chamber.

Abstract: A method for growing a III-V material may include forming at least one layer on a stack including a crystalline layer made of III-V material, a first masking layer surmounting the germination layer, the first masking layer having at least one first opening; depositing a second masking layer covering an upper face of the sacrificial layer; forming at least one second opening in the second masking layer; removing the sacrificial layer selectively at the first masking layer and at the second masking layer; epitaxially growing a material made of the III-V material from the germination layer; forming al least one third opening in the second masking layer; and epitaxially growing at least one material made of the III-V material from the first epitaxial layer.

Abstract: A load lock system for manufacturing a metal alloy using a feed material includes a process chamber having a controlled atmosphere, a feed chamber in flow communication with the process chamber having controlled atmosphere capabilities configured to contain a quantity of the feed material, and a collection chamber in flow communication with the process chamber having controlled atmosphere capabilities configured to collect the metal alloy manufactured in the process chamber. The system also includes a gate valve between the process chamber and the feed chamber configured to either allow passage of the feed material between the chambers, or to seal the process chamber from the feed chamber. The system also includes a discharge valve between the process chamber and the collection chamber configured to either allow passage of the metal alloy between the chambers, or to seal the process chamber from the collection chamber.

Abstract: A process for producing metals, alloys and metal powders includes providing a feed material; heating the feed material in a melting hearth into a molten metal; and reducing oxygen in the molten metal using a reactive gas in an ionized or unionized state and an oxygen scavenging reaction wherein reaction sites in the molten metal containing oxygen react with the reactive gas. A first system configured to perform a process for producing metals and alloys includes a melting hearth and a heat source system in a melting chamber configured to melt a feed material into a molten metal for atomization, casting or further processing. A second system configured to perform a process for producing metal powders includes a foundry system configured to melt a feed material into a molten metal and an atomization system configured to atomize the molten metal into a metal powder comprised of metal particles.

Abstract: A melting hearth includes high temperature walls, a melting cavity having a specific topography, and conformal fluid cooling passages configured to provide a flow path for a cooling fluid that is substantially parallel to the topography of the melting cavity. In addition, the topography of the melting cavity mirrors a heat signature of a heat source used to melt a feed material in the melting hearth into a molten metal. A cold hearth melting system includes the melting hearth, a magnetic stirring system, the heat source having the heat signature, a tilting mechanism for tilting the melting hearth to a desired tilt angle, and a fluid cooling system having a fluid source in flow communication with the conformal fluid cooling passages. A process for producing high temperature metal alloys uses the cold hearth melting system and an algorithm for controlling the pouring of the molten metal from the melting hearth.

Abstract: A consolidator system for processing feed materials includes a reactor vessel having a sealed process chamber, a rotatable indexing table in the process chamber having a plurality separate melting hearths; a melting system in thermal communication with the melting hearths configured to melt a feed material in the melting hearths into a molten metal; a feeding system configured to feed the feed material into the melting hearths; and a collection system configured to collect consolidated metal pucks from the melting hearths. The consolidator system also includes a fluid cooling system in fluid communication with the melting hearths configured to cool the feed material into molten form into the consolidated metal pucks in solid form. The consolidator system also includes a sensing system and a control system configured to control the feeding system, the indexing table and the melting system using input from the sensing system.

Abstract: A method for obtaining mesas that are made at least in part of a nitride (N), the method includes providing a stack comprising a substrate and at least the following layers disposed in succession from the substrate a first layer, referred to as the flow layer, and a second, crystalline layer, referred to as the crystalline layer; forming pads by etching the crystalline layer and at least one portion of the flow layer such that: —each pad includes at least: —a first section, referred to as the flow section, formed by at least one portion of the flow layer, and a second, crystalline section, referred to as the crystalline section, framed by the crystalline layer and overlying the flow section, the pads are distributed over the substrate so as to form a plurality of sets of pads; and epitaxially growing a crystallite on at least some of said pads and continuing the epitaxial growth of the crystallites until the crystallites carried by the adjacent pads of the same set coalesce.

Abstract: The invention relates to a method for obtaining a layer at least partially made of a nitride (N), first comprising the provision of a stack comprising at least one assembly of pads (1000A1-1000B4) extending from a substrate (100). Each pad comprises at least one creep section (220A1-220A5) and one crystalline section (300A1,300A5) surmounting the creep section (200A1-200A5). Then, a crystallite (510A1-510A5) is epitaxially grown on at least some of said pads until coalescence of the crystallites, so as to form a nitride layer (550A). The pads of the assembly are distributed over the substrate, such that the relative arrangement of the pads of the assembly is such that during the epitaxy of the crystallites, the progressive coalescence of the crystallites is always done between, on the one hand, a crystallite or a plurality of coalesced crystallites and, on the other hand, an isolated crystallite.

Abstract: A powder feeder system for a foundry system having a mixing hearth includes a housing assembly, and a feeder assembly in the housing assembly having a moveable barrel feeder for feeding a pre-weighed charge of metal powder into the mixing hearth of the foundry system during operation thereof. A method for recycling metal powder includes the steps of melting a content of the mixing hearth completely; and then feeding the metal powder into the mixing hearth while the contents of the mixing hearth are still molten using the powder feeder system.

Abstract: An adaptive flow regulation system for a tilting melting hearth atomization system includes: a load cell sensor configured to capture a weight of a molten metal within a tilting melting hearth during a pouring operation; a process camera configured to capture visual characteristics of the molten metal during the pouring operation; a particle size analyzer configured to analyze a metal powder following an atomization process to determine a particle size distribution of the metal particles; an actuator coupled to a linkage configured to support and move the tilting melting hearth to a desired hearth tilt angle; and a central processing unit (CPU) having a machine learning program configured to receive data from the load cell sensor, the process camera, and the particle size analyzer and to send a control signal to the actuator for controlling a pour rate from a melting cavity of the tilting melting hearth.

Abstract: A tilting melting hearth system (10) includes a tilting melting hearth (12) for melting a metal (14) into a molten metal (16) and a central processing unit (CPU) (18) for controlling the tilting melting hearth (12) having an automated hearth tilting program (20) configured to select a hearth tilt profile based on a weight (66A) of the molten metal (16) in the tilting melting hearth (12). The tilting melting hearth system (10) can also include an atomization die (38) in flow communication with the tilting melting hearth (12) for receiving a stream of molten metal (40) and generating a metal powder (42), or a casting die (46) for generating a casting (48) of the metal (14). The tilting melting hearth system (10) can be used to perform a method for recycling scrap metal by automatically determining the weight of the molten metal (16) in the tilting melting hearth (12).

Abstract: A method for producing at least one nitride layer includes providing a stack having a plurality of pillars extending from a substrate of the stack. Each pillar includes at least a crystalline section and a summit having a summit surface area The method also includes growing by epitaxy a crystallite from the summit of some the plurality of pillars and continuing the epitaxial growth of the crystallites until the crystallites supported by the pillars coalesce. The plurality of pillars includes at least one retention pillar and separation pillars. The pillars are configured so that once the nitride layer is formed, the at least one retention pillar retains the nitride layer and some of the separation pillars can fracture.

Abstract: A device including first and second light-emitting cells respectively emitting in first and second wavelength ranges, wherein: each cell includes a stack of a first layer of a first semiconductor material and of a second layer of a second semiconductor material having a different mesh parameter; in the first cell, the first layer is in contact with the second layer across the entire surface of the cell; and in the second cell, a mask provided with a plurality of through nano-openings forms an interface between the first layer and the second layer, the second layer comprising a plurality of nanopillars of the second material arranged in the nano-openings of the mask, and a coalesced layer extending across substantially the entire surface of the cell on the side of the mask opposite to the first layer.

Abstract: A method including the following successive steps: a) forming, on a surface of a support substrate, a first layer made of a material selected from among a lamellar dichalcogenide or a lamellar chalcogenide including a stack of sheets; b) forming, by physical vapor deposition on the side of said surface of the support substrate, a second layer made of a first III-N semiconductor material coating the first layer; and c) carrying out a thermo-chemical treatment of the first layer resulting, in the first layer, in a conversion of van der Waals bonds between the sheets of the first layer into covalent bonds.

Abstract: A cutting board with one or more cut-out sections is provided. The cutting board includes at least one work surface and a frame that transitions from a first (e.g., closed, stowed) position to a second position in which the frame at least partially defines a cut-out for removably holding one or more containers. The work surface may be used to prepare food ingredients, which are easily transported to the one or more containers. When work is complete, the containers are removed and the frame is returned to the first position, in which the cutting board occupies less space than in the second position.

Abstract: A method for producing a vertical component comprising with the basis of a III-N material, comprising providing platelets made of the III-N material obtained by epitaxy on pads, the platelets comprise at least first and second layers doped and stacked on one another in a vertical direction. The method further includes the production of a first electrode and the production of a second electrode located on the platelet and configured such that a current passing from one electrode to the other passes through at least the second layer in all of its thickness, the thickness being taken in the vertical direction.

Abstract: A cutting board with one or more cut-out sections is provided. The cutting board includes at least one work surface and a frame that transitions from a first (e.g., closed, stowed) position to a second position in which the frame at least partially defines a cut-out for removably holding one or more containers. The work surface may be used to prepare food ingredients, which are easily transported to the one or more containers. When work is complete, the containers are removed and the frame is returned to the first position, in which the cutting board occupies less space than in the second position.