Abstract: Described examples include an integrated circuit having a transistor that has a transistor well extending into a semiconductor substrate having a first dopant concentration; a gate electrode over the transistor well; and a gate insulating layer between the transistor well and the gate electrode, the gate insulating layer having a first thickness. The integrated circuit also has a capacitor that has a capacitor well extending into the substrate having a second dopant concentration greater than the first dopant concentration; a capacitor electrode over the capacitor well; and a homogeneous capacitor insulating layer between the capacitor well and the capacitor electrode having a greater thickness than the gate insulating layer.