Abstract: An electrostatic discharge measuring device includes an integrated circuit including a collector, a discharge pad and an ESD detector circuit coupled to the collector and discharge pad. The ESD detector circuit includes a device that detects occurrence and magnitude of an electrostatic discharge between the collector and the discharge pad. In one embodiment, the device is a metal-oxide-semiconductor capacitor. In another embodiment, the device is a thin film storage bitcell. In one embodiment, the electrostatic discharge measuring device is contained in a test microelectronic package. A method includes running the test microelectronic package through a manufacturing process to determine location during manufacturing at which an electrostatic discharge occurs when an externally-similar production microelectronic packages is run through the same manufacturing process.

Abstract: An electrostatic discharge measuring device includes an integrated circuit including a collector, a discharge pad and an ESD detector circuit coupled to the collector and discharge pad. The ESD detector circuit includes a device that detects occurrence and magnitude of an electrostatic discharge between the collector and the discharge pad. In one embodiment, the device is a metal-oxide-semiconductor capacitor. In another embodiment, the device is a thin film storage bitcell. In one embodiment, the electrostatic discharge measuring device is contained in a test microelectronic package. A method includes running the test microelectronic package through a manufacturing process to determine location during manufacturing at which an electrostatic discharge occurs when an externally-similar production microelectronic packages is run through the same manufacturing process.