Abstract: The present invention pertains to photodetectors based on colloidal quantum dot films. An ultrathin layer of metal oxide deposited at the heterojunction interface by atomic layer deposition (ALD) results in quantum dot infrared photodetectors with increased photocurrent, decreased dark current, and world-record specific detectivity of >2×1012 Jones for 2000-2550 nm at room temperature and zero applied bias. This detectivity is an order of magnitude higher than the detectivity of commercial detectors and better than any previously-published nanomaterial. In addition to record sensitivity, the devices of the present invention have large linear dynamic range (>120 dB) and good speed (39 kHz). The device fabrication is amenable to making detector arrays at the wafer scale. It has been shown that the thin metal oxide interlayer passivates interfacial defect states, which results in the lower dark current and improved photocurrent at zero bias.

Abstract: Solar cells and methods for use and making these solar cells are disclosed. An exemplary solar cell includes a first electrode. The solar cell also includes a nanocrystal film of a single material disposed in contact with the first electrode. The solar cell also includes a second electrode disposed in contact with the nanocrystal film, not in contact with the first electrode.

Abstract: An extrudable wiring harness clip has an elongate base for taping the wiring harness clip to a bundle of cables and an integral self expanding head for attaching the bundle of cables to a support panel or the like. The extrudable wiring harness clip has a constant cross section extending from a front face to a rear face that are preferably parallel to each other. The bottom surface of the elongate base is preferably flat or at least not curved in a direction that is parallel to the length of the elongate base. The extrudable wiring harness clip is made by slicing a portion from an extrusion strip.