Patents by Inventor Matthew Damien Stephens
Matthew Damien Stephens has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11739220Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.Type: GrantFiled: February 21, 2019Date of Patent: August 29, 2023Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.Inventors: Antonio Sanchez, Gennadiy Itov, Manish Khandelwal, Cole Ritter, Peng Zhang, Jean-Marc Girard, Zhiwen Wan, Glenn Kuchenbeiser, David Orban, Sean Kerrigan, Reno Pesaresi, Matthew Damien Stephens, Yang Wang, Guillaume Husson, Grigory Nikiforov
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Patent number: 11274112Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(O) on carbon, Pd(O) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si—containing films.Type: GrantFiled: October 14, 2019Date of Patent: March 15, 2022Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Antonio Sanchez, Gennadiy Itov, Peng Zhang, Matthew Damien Stephens, Manish Khandelwal
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Patent number: 11203528Abstract: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2—)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.Type: GrantFiled: March 11, 2020Date of Patent: December 21, 2021Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.Inventors: Antonio Sanchez, Gennadiy Itov, Manish Khandelwal, Cole Ritter, Peng Zhang, Jean-Marc Girard, Zhiwen Wan, Glenn Kuchenbeiser, David Orban, Sean Kerrigan, Reno Pesaresi, Matthew Damien Stephens, Yang Wang, Guillaume Husson
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Publication number: 20210102092Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)×(SiH2?)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.Type: ApplicationFiled: February 21, 2019Publication date: April 8, 2021Inventors: Antonio SANCHEZ, Gennadiy ITOV, Manish KHANDELWAL, Cole RITTER, Peng ZHANG, Jean-Marc GIRARD, Zhiwen WAN, Glenn KUCHENBEISER, David ORBAN, Sean KERRIGAN, Reno PESARESI, Matthew Damien STEPHENS, Yang WANG, Guillaume HUSSON, Grigory NIKIFOROV
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Publication number: 20210087406Abstract: A Si-containing film forming composition comprising a catalyst and/or a polysilane and a N—H free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising N—H free repeating units having the formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.Type: ApplicationFiled: February 21, 2019Publication date: March 25, 2021Inventors: Antonio SANCHEZ, Gennadiy ITOV, Manish KHANDELWAL, Cole RITTER, Peng ZHANG, Jean-Marc GIRARD, Zhiwen WAN, Glenn KUCHENBEISER, David ORBAN, Sean KERRIGAN, Reno PESARESI, Matthew Damien STEPHENS, Yang WANG, Guillaume HUSSON, Grigory NIKIFOROV
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Publication number: 20200277190Abstract: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2—)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.Type: ApplicationFiled: March 11, 2020Publication date: September 3, 2020Inventors: Antonio SANCHEZ, Gennadiy Itov, Manish Khandelwal, Cole Ritter, Peng Zhang, Jean-Marc Girard, Zhiwen Wan, Glenn Kuchenbeiser, David Orban, Sean Kerrigan, Reno Pesaresi, Matthew Damien Stephens, Yang Wang, Guillaume Husson
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Patent number: 10647578Abstract: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2—)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.Type: GrantFiled: July 27, 2017Date of Patent: May 12, 2020Assignees: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude, American Air Liquide, Inc.Inventors: Antonio Sanchez, Gennadiy Itov, Manish Khandelwal, Cole Ritter, Peng Zhang, Jean-Marc Girard, Zhiwen Wan, Glenn Kuchenbeiser, David Orban, Sean Kerrigan, Reno Pesaresi, Matthew Damien Stephens, Yang Wang, Guillaume Husson
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Publication number: 20200040013Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(O) on carbon, Pd(O) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si—containing films.Type: ApplicationFiled: October 14, 2019Publication date: February 6, 2020Inventors: Antonio Sanchez, Gennadiy Itov, Peng Zhang, Matthew Damien Stephens, Manish Khandelwal
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Patent number: 10501484Abstract: Halogen free amine substituted trisilylamine and tridisilylamine compounds and a method of their preparation via dehydrogenative coupling between the corresponding unsubstituted trisilylames and amines catalyzed by transition metal catalysts is described. This new approach is based on the catalytic dehydrocoupling of a Si—H and a N—H moiety to form an Si—N containing compound and hydrogen gas. The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—N containing products are halide free. Such compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si containing films.Type: GrantFiled: February 9, 2018Date of Patent: December 10, 2019Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Antonio Sanchez, Jean-Marc Girard, Gennadiy Itov, Manish Khandelwal, Matthew Damien Stephens, Peng Zhang
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Patent number: 10494387Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.Type: GrantFiled: February 7, 2018Date of Patent: December 3, 2019Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Antonio Sanchez, Gennadiy Itov, Peng Zhang, Matthew Damien Stephens, Manish Khandelwal
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Publication number: 20180230171Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.Type: ApplicationFiled: February 7, 2018Publication date: August 16, 2018Inventors: Antonio Sanchez, Gennadiy Itov, Peng Zhang, Matthew Damien Stephens, Manish Khandelwal
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Publication number: 20180162883Abstract: Halogen free amine substituted trisilylamine and tridisilylamine compounds and a method of their preparation via dehydrogenative coupling between the corresponding unsubstituted trisilylames and amines catalyzed by transition metal catalysts is described. This new approach is based on the catalytic dehydrocoupling of a Si—H and a N—H moiety to form an Si—N containing compound and hydrogen gas. The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—N containing products are halide free. Such compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si containing films.Type: ApplicationFiled: February 9, 2018Publication date: June 14, 2018Inventors: Antonio Sanchez, Jean-Marc Girard, Gennadiy Itov, Manish Khandelwal, Matthew Damien Stephens, Peng Zhang
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Patent number: 9920078Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X?N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X?N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.Type: GrantFiled: August 24, 2016Date of Patent: March 20, 2018Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges ClaudeInventors: Antonio Sanchez, Gennadiy Itov, Peng Zhang, Matthew Damien Stephens, Manish Khandelwal
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Publication number: 20180072571Abstract: Solid or liquid N—H free, C-free, and Si-rich perhydropolysilazane compositions comprising units having the following formula [—N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 when x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 when x+y=3 are disclosed. Also disclosed are synthesis methods and applications for the same.Type: ApplicationFiled: July 27, 2017Publication date: March 15, 2018Inventors: Antonio SANCHEZ, Gennadiy ITOV, Manish KHANDELWAL, Cole RITTER, Peng ZHANG, Jean-Marc GIRARD, Zhiwen WAN, Glenn KUCHENBEISER, David ORBAN, Sean KERRIGAN, Reno PESARESI, Matthew Damien STEPHENS, Yang WANG, Guillaume HUSSON
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Publication number: 20160362429Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X?N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X?N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.Type: ApplicationFiled: August 24, 2016Publication date: December 15, 2016Inventors: Antonio Sanchez, Gennadily Itov, Peng Zhang, Matthew Damien Stephens, Manish Khandelwal
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Patent number: 9453035Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.Type: GrantFiled: April 1, 2016Date of Patent: September 27, 2016Assignee: VOLTAIX, LLCInventors: Antonio Sanchez, Gennadiy Itov, Peng Zhang, Matthew Damien Stephens
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Patent number: 9446958Abstract: The present invention is directed to a condensed phase batch process for synthesis of trisilylamine (TSA). An improved synthesis process that incorporates a solvent to help promote a condensed-phase reaction between ammonia gas (or liquid) and liquified monochlorosilane (MCS) in good yields is described. This process facilitates the removal of the byproduct waste with little to no reactor down time, substantial reduction of down-stream solids contamination and high-purity product from first-pass distillation.Type: GrantFiled: October 28, 2013Date of Patent: September 20, 2016Assignee: L'Air Liquide Societe Anonyme L'Etude Et L'Exploitation Des Procedes Georges ClaudeInventors: Cole J. Ritter, III, Matthew Damien Stephens
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Publication number: 20160215003Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X?N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X?N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.Type: ApplicationFiled: April 1, 2016Publication date: July 28, 2016Inventors: Antonio Sanchez, Gennadiy Itov, Peng Zhang, Matthew Damien Stephens
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Patent number: 9382269Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X?N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X?N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.Type: GrantFiled: September 19, 2014Date of Patent: July 5, 2016Assignee: VOLTAIX, LLCInventors: Antonio Sanchez, Gennadily Itov, Peng Zhang, Matthew Damien Stephens
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Publication number: 20150094470Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X?N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X?N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.Type: ApplicationFiled: September 19, 2014Publication date: April 2, 2015Inventors: Antonio Sanchez, Gennadily Itov, Peng Zhang, Matthew Damien Stephens