Abstract: Vertically-aligned and conductive dummies in integrated circuit (IC) layers reduce capacitance and bias independence. Dummies are islands of material in areas of metal and semiconductor IC layers without circuit features to avoid non-uniform polishing (“dishing”). Conductive diffusion layer dummies in a diffusion layer and conductive polysilicon dummies in a polysilicon layer above the diffusion layer reduce bias dependence and nonlinear circuit operation in the presence of an applied varying voltage. ICs with metal dummies vertically aligned in at least one metal layer above the polysilicon dummies and diffusion dummies reduce lateral coupling capacitance compared to ICs in which dummies are dispersed in a non-overlapping layout by a foundry layout tool. Avoiding lateral resistance-capacitance (RC) ladder networks created by dispersed dummies improves signal delays and power consumption in radio-frequency (RF) ICs.

Abstract: Vertically-aligned and conductive dummies in integrated circuit (IC) layers reduce capacitance and bias independence. Dummies are islands of material in areas of metal and semiconductor IC layers without circuit features to avoid non-uniform polishing (“dishing”). Conductive diffusion layer dummies in a diffusion layer and conductive polysilicon dummies in a polysilicon layer above the diffusion layer reduce bias dependence and nonlinear circuit operation in the presence of an applied varying voltage. ICs with metal dummies vertically aligned in at least one metal layer above the polysilicon dummies and diffusion dummies reduce lateral coupling capacitance compared to ICs in which dummies are dispersed in a non-overlapping layout by a foundry layout tool. Avoiding lateral resistance-capacitance (RC) ladder networks created by dispersed dummies improves signal delays and power consumption in radio-frequency ICs.

Abstract: Vertically-aligned and conductive dummies in integrated circuit (IC) layers reduce capacitance and bias independence. Dummies are islands of material in areas of metal and semiconductor IC layers without circuit features to avoid non-uniform polishing (“dishing”). Conductive diffusion layer dummies in a diffusion layer and conductive polysilicon dummies in a polysilicon layer above the diffusion layer reduce bias dependence and nonlinear circuit operation in the presence of an applied varying voltage. ICs with metal dummies vertically aligned in at least one metal layer above the polysilicon dummies and diffusion dummies reduce lateral coupling capacitance compared to ICs in which dummies are dispersed in a non-overlapping layout by a foundry layout tool. Avoiding lateral resistance-capacitance (RC) ladder networks created by dispersed dummies improves signal delays and power consumption in radio-frequency (RF) ICs.

Abstract: Vertically-aligned and conductive dummies in integrated circuit (IC) layers reduce capacitance and bias independence. Dummies are islands of material in areas of metal and semiconductor IC layers without circuit features to avoid non-uniform polishing (“dishing”). Conductive diffusion layer dummies in a diffusion layer and conductive polysilicon dummies in a polysilicon layer above the diffusion layer reduce bias dependence and nonlinear circuit operation in the presence of an applied varying voltage. ICs with metal dummies vertically aligned in at least one metal layer above the polysilicon dummies and diffusion dummies reduce lateral coupling capacitance compared to ICs in which dummies are dispersed in a non-overlapping layout by a foundry layout tool. Avoiding lateral resistance-capacitance (RC) ladder networks created by dispersed dummies improves signal delays and power consumption in radio-frequency (RF) ICs.

Abstract: A refrigerator having an in-door water dispenser and a water routing system is provided with a cabinet. A door is reversibly hinged to the cabinet at either a first edge or a second edge. A water supply line leads from a water reservoir and has a first connection at a first top front corner of the cabinet and a second connection at a second top front corner. A feeder line leads from the dispenser to a top surface of the door with an end at one of the first door edge and the second door edge. When the door is hinged along the first edge, the end of the feeder line is connected to the first connection and when the door is hinged along the second edge, the end of the feeder line is connected to the second connection.

Abstract: An air tower is provided for a refrigeration appliance that has a first cooled compartment and a second cooled compartment. The air tower has a diffuser section with a plurality of vent outlets to communicate with the first cooled compartment. A central duct section is defined by walls extending away from the diffuser section. An outlet is located at an end of the central section opposite the diffuser section to communicate with the second cooled compartment. A heat trap compartment is formed along one of the walls defining the central duct section. The heat trap compartment may communicate with a defrost heater.