Patents by Inventor Matthew DeJarld

Matthew DeJarld has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • On-chip EMF isolation of an integrated circuit coupled with photoconductive semiconductor switch under an on-chip faraday cage
    Patent number: 11710708
    Abstract: An integrated circuit structure including a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure; an EMF shield enclosing the substrate, the gallium nitride layer and the photoconductive semiconductor switch laterally disposed alongside the transistor on the gallium nitride layer integrated into the integrated circuit structure; and a signal line electronically coupled with the photoconductive semiconductor switch, the signal line penetrating the EMF shield.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: July 25, 2023
    Assignee: RAYTHEON COMPANY
    Inventors: Matthew DeJarld, Jeffrey R. LaRoche, Susan C. Trulli
  • ON-CHIP EMF ISOLATION OF AN INTEGRATED CIRCUIT COUPLED WITH PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH UNDER AN ON-CHIP FARADAY CAGE
    Publication number: 20230056601
    Abstract: An integrated circuit structure including a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure; an EMF shield enclosing the substrate, the gallium nitride layer and the photoconductive semiconductor switch laterally disposed alongside the transistor on the gallium nitride layer integrated into the integrated circuit structure; and a signal line electronically coupled with the photoconductive semiconductor switch, the signal line penetrating the EMF shield.
    Type: Application
    Filed: August 19, 2021
    Publication date: February 23, 2023
    Applicant: Raytheon Company
    Inventors: Matthew DeJarld, Jeffrey R. LaRoche, Susan C. Trulli
  • Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors
    Patent number: 11581448
    Abstract: An integrated circuit structure comprising a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure wherein a regrown gallium nitride material is disposed on the photoconductive semiconductor switch and operatively coupled with the wafer.
    Type: Grant
    Filed: April 1, 2021
    Date of Patent: February 14, 2023
    Assignee: Raytheon Company
    Inventors: Matthew DeJarld, Jeffrey R. LaRoche, Clay T. Long, Lovelace Soirez
  • PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE GaN ON Si FIELD-EFFECT TRANSISTORS
    Publication number: 20220320360
    Abstract: An integrated circuit structure comprising a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure wherein a regrown gallium nitride material is disposed on the photoconductive semiconductor switch and operatively coupled with the wafer.
    Type: Application
    Filed: April 1, 2021
    Publication date: October 6, 2022
    Applicant: Raytheon Company
    Inventors: Matthew DeJarld, Jeffrey R. LaRoche, Clay T. Long, Lovelace Soirez
  • PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE GaN ON Si FIELD-EFFECT TRANSISTORS
    Publication number: 20220320152
    Abstract: An integrated circuit structure comprising a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure.
    Type: Application
    Filed: April 1, 2021
    Publication date: October 6, 2022
    Applicant: Raytheon Company
    Inventors: Matthew DeJarld, Jeffrey R. LaRoche, Clay T. Long, Lovelace Soirez