Abstract: Rapid, reversible redox activity may be accomplished at significantly reduced temperatures, as low as about 200° C., from epitaxially stabilized, oxygen vacancy ordered SrCoO2.5 and thermodynamically unfavorable perovskite SrCoO3-?. The fast, low temperature redox activity in SrCoO3-? may be attributed to a small Gibbs free energy difference between the two topotactic phases. Epitaxially stabilized thin films of strontium cobaltite provide a catalyst adapted to rapidly transition between oxidation states at substantially low temperatures. Methods of transitioning a strontium cobaltite catalyst from a first oxidation state to a second oxidation state are described.

Abstract: Rapid, reversible redox activity may be accomplished at significantly reduced temperatures, as low as about 200° C., from epitaxially stabilized, oxygen vacancy ordered SrCoO2.5 and thermodynamically unfavorable perovskite SrCoO3-?. The fast, low temperature redox activity in SrCoO3-? may be attributed to a small Gibbs free energy difference between the two topotactic phases. Epitaxially stabilized thin films of strontium cobaltite provide a catalyst adapted to rapidly transition between oxidation states at substantially low temperatures. Methods of transitioning a strontium cobaltite catalyst from a first oxidation state to a second oxidation state are described.

Abstract: A transition metal oxide insulator composition having a tuned band gap includes a transition metal oxide having a perovskite or a perovskite-like crystalline structure. The transition metal oxide includes at least one first element selected from the group of Bi, Ca, Ba, Sr, Li, Na, Mg, K, Pb, and Pr; and at least one second element selected from the group of Ti, Al, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Pd, Hf, Ta, W, Re, Os, Ir, and Pt. At least one correlated insulator is integrated into the crystalline structure, including REMO3, wherein RE is at least one Rare Earth element, and wherein M is at least one element selected from the group of Co, V, Cr, Ni, Mn, and Fe. The composition is characterized by a band gap of less than 4.5 eV.

Abstract: A transition metal oxide insulator composition having a tuned band gap includes a transition metal oxide having a perovskite or a perovskite-like crystalline structure. The transition metal oxide includes at least one first element selected from the group of Bi, Ca, Ba, Sr, Li, Na, Mg, K, Pb, and Pr; and at least one second element selected from the group of Ti, Al, V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Nb, Mo, Ru, Rh, Pd, Hf, Ta, W, Re, Os, Ir, and Pt. At least one correlated insulator is integrated into the crystalline structure, including REMO3, wherein RE is at least one Rare Earth element, and wherein M is at least one element selected from the group of Co, V, Cr, Ni, Mn, and Fe. The composition is characterized by a band gap of less than 4.5 eV.

Abstract: A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO)n(A′BO3)m in which “n” and “m” are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

Abstract: A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

Abstract: Heterostructures having a large lattice mismatch between an upper epilayer and a substrate and a method of forming such structures having a thin intermediate layer are disclosed. The strain due to a lattice mismatch between the intermediate layer and the substrate is partially relieved by the formation of edge type dislocations which are localized and photoelectrically inactive. Growth of the intermediate layer is interrupted before it reaches the thickness at which the left over strain is relieved by 60 degree type threading dislocations. The upper epilayer is then grown in an unstrained and defect-free condition upon the intermediate layer where the unstrained lattice constant of the epilayer is about the same as the partially relieved strain lattice constant or the intermediate layer. An unstrained defect-free epilayer of InGaAs has been grown on a GaAs substrate with an intermediate layer 3-10 nm in thickness of InAs.

Abstract: Aluminum base alloys containing 0.5 to 1.3% silicon, 0.8 to 1.8% copper, 0.1 to 0.4% manganese, 0.4 to 1.0% magnesium, up to 0.6% iron, 0.20% chromium, 0.5% zinc, 0.15% titanium and 0.05% each of other components up to 0.15% total, the balance aluminum are described.Such alloys demonstrate optimum strength, formability and corrosion resistance properties for use as autobody sheet alloys.