Abstract: A semiconductor structure having an electrically conducting silicon substrate and a GaN semiconductor device separated from the substrate by a buffer layer is provided. The buffer layer electrically connects the silicon substrate with the GaN semiconductor device. In addition, a GaN LED arranged in a flip chip orientation on the buffer layer on the substrate is provided.

Abstract: A semiconductor structure having an electrically conducting silicon substrate and a GaN semiconductor device separated from the substrate by a buffer layer is provided. The buffer layer electrically connects the silicon substrate with the GaN semiconductor device. In addition, a GaN LED arranged in a flip chip orientation on the buffer layer on the substrate is provided.

Abstract: A chair comprising a combination of injection molded components. The combination includes a gas assist molded rear frame and a gas assist molded front frame. A seat is injection molded using regular injection molding. The seat joins the uppermost part of the front from to a mid-portion of the rear frame. In addition, four connecting rods are insert molded such that plastic jackets surround metal cores. The metal cores have fastening means integrated into their ends. Each of the connecting rods joins and abuts protrusions formed in and extending from the front and rear frames. All of the resin used to mold the frames, seat and connecting rods is a polycarbonate which provides a chair made of the combination with a crystal-like appearance.

Abstract: The present invention is directed to apparatus and methods that facilitate access to space defined at least in part by a generally vertical surface. The apparatus of the present invention includes a tread and legs, each end of each leg may be efficiently inserted into appropriately sized and shaped receiving apertures within the generally vertical. The apparatus includes safety stops that assist a person to safely step onto the tread and a face of the tread on which information may be carried.

Abstract: A heterojunction bipolar transistor has a mesa including collector 604, base 603, and emitter 602 layers. The mesa has first and second sidewalls 606. An improved heat dissipation structure comprises a layer of electrically insulative and thermally conductive material 607 disposed on one of the sidewalls. A thermal path metal 600 is electrically connected to the emitter 602 and is disposed on the layer of electrically insulative and thermally conductive material 607. The thermal path metal 600 extends from the emitter 602 to the substrate 608 providing for efficient dissipation of heat that is generated by the HBT device.

Abstract: The present invention presents a method in which semiconductor heterojunction and homojunction materials are selectively formed on silicon pedestals in an HMIC after the high temperature processing steps in fabricating the HMIC structure are completed.

Abstract: It has been identified that a known loss mechanism in the access path to a mesa type device is more significant than previously believed. The source of the loss is due to the electromagnetic interaction of the wire bond and the device side wall which induces an image current at the side wall along the path of the wire bond. According to the teachings of the present invention, a process for forming a conductive coating on a semiconductor device is disclosed. The coating reduces high frequency losses associated with the device. The processes disclosed are compatible with existing semiconductor fabrication devices and advantageously provide improved uniformity and repeatability.