Abstract: A holder is described for carrying a photolithography mask in a flattened condition. The holder may include a mask chuck and may be able to flatten a mask for use in photolithography. In one example, the holder may include a substrate and a plurality of independently controllable actuators coupled to the substrate and coupled to a photolithography mask to flatten the photolithography mask.

Abstract: A holder is described for carrying a photolithography mask in a flattened condition. The holder may include a mask chuck and may be able to flatten a mask for use in photolithography. In one example, the holder may include a substrate and a plurality of independently controllable actuators coupled to the substrate and coupled to a photolithography mask to flatten the photolithography mask.

Abstract: In scanning lithography as used in the semiconductor industry, systematic variations in critical dimension feature size which depend on the substrate coordinates are compensated for in a lithography tool. This is done by determining (experimentally or theoretically) low frequency variations in the critical dimensions on the target caused by imperfections in the lithography tool and/or the resist and/or the process steps. These low frequency spatial errors are compensated for, after the primary scanning exposure using the original pattern data, by a secondary scanning exposure of the target using a weaker intensity and relatively larger diameter exposure beam. The secondary exposure is also carried out at a larger address size (address grid) than is the primary exposure so it is relatively fast in terms of throughput.