Abstract: Existing approaches to refuse handling are all based on historical approaches which rely on a network of refuse collection vehicles collecting waste from individual households and delivering this to a centralised landfill or MBI location. This is highly undesirable and wasteful. An alternative process is disclosed, relying on the thermal treatment of waste and like products produced or brought in to the residential property and processed within the domestic curtilage to produce fuel or other forms of energy. Thus, domestic waste will be thermally treated at the home instead of being collected by local authorities and disposed of. The waste input put material will be loaded into a domestically engineered thermal conversion unit either directly or after a pre-process such as shredding. The feedstock will be converted into fuels by a thermal treatment, such as pyrolysis.

Abstract: Ammunition cartridges for hunting big game with an AR15 rifle are provided while maintaining a size of the ammunition cartridge that permits multiple ammunition cartridges to be inserted into an AR15 rifle magazine in alternating side by side relation. Each cartridge has a rim diameter of 0.422 inches, extractor groove and a slight tapered main body base of 0.36°. In one embodiment, the main base body extends to form a cartridge with total length of 1.8 inches and nominal body taper of 0.020 inches to accept a bullet with a diameter of 0.400 inches. In other embodiments, the main body base extends to a shoulder and a neck to form a cartridge with a total length of 1.66 inches. The shoulder tapers to the neck at a 35° angle with a nominal body taper of 0.014 inches. These embodiments accept bullets with diameters of 0.277, 0.284 and 0.308 inches.

Abstract: A muzzle loading conversion system for a rifle having an upper and lower receiver. A barrel is slidingly secured to the upper receiver. A stationary bolt member is positioned within the upper receiver with a firing pin slidably received within a bolt opening. A breech plug mechanism is threadedly secured to the barrel within a barrel end section and the breech plug mechanism is adapted to receive a primer within a breech plug mechanism chamber which is in fluid communication with the bolt through opening. The breech plug mechanism is engaged with the bolt member within a breech plug member receiving chamber.

Abstract: Existing approaches to refuse handling are all based on historical approaches which rely on a network of refuse collection vehicles collecting waste from individual households and delivering this to a centralised landfill or MBI location. This is highly undesirable and wasteful. An alternative process is disclosed, relying on the thermal treatment of waste and like products produced or brought in to the residential property and processed within the domestic curtilage to produce fuel or other forms of energy. Thus, domestic waste will be thermally treated at the home instead of being collected by local authorities and disposed of. The waste input put material will be loaded into a domestically engineered thermal conversion unit either directly or after a pre-process such as shredding. The feedstock will be converted into fuels by a thermal treatment, such as pyrolysis.

Abstract: A fastener to removably mount an object in a mounting aperture of a panel is provided. The fastener includes a body having two opposing side members and defining a second aperture configured to accept at least a portion of the object, at least one elastic abutting flange disposed between the fastener body and the mounting aperture, a corrosion resistant coating, and a silencer plating overlying the corrosion resistant coating.

Abstract: A magnetic memory fabricated on a semiconductor substrate is disclosed. The method and system include a plurality of magnetic tunneling junctions and a plurality of shields for magnetically shielding the plurality of magnetic tunneling junctions. Each of the plurality of magnetic tunneling junctions includes a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. At least a portion of the plurality of shields have a high moment and a high permeability and are conductive. The plurality of shields are electrically isolated from the plurality of magnetic tunneling junctions. The plurality of magnetic tunneling junctions are between the plurality of shields.

Abstract: A magnetic random access memory (MRAM) cell and a memory array formed from the MRAM cells are disclosed. The MRAM cell includes a magnetic tunneling junction and a transistor. The magnetic tunneling junction includes a first ferromagnetic layer, a second ferromagnetic layer and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. The gate of the transistor is coupled to a first end of the magnetic tunneling junction. The source of the transistor is coupled to a second end the magnetic tunneling junction. The drain of the transistor is coupled with an output for reading the magnetic memory cell. During reading, a read current is applied to the magnetic tunneling junction and the transistor is preferably operated in a saturation region.

Abstract: The present invention provides an improved bias magnet-to-magnetoresistive element interface and method of fabrication. In a preferred embodiment, the wall/walls of an MR element opposing a bias layer are formed by over etching to provide vertical side walls without taper. In the preferred embodiment, a protective element is formed over the MR element to protect it during etch processes. In some embodiments, a filler layer is deposited prior to bias layer formation. In CIP embodiments, any portion of the filler layer forming on vertical side walls of the MR element is etched to provide an exposed side wall surface for contiguous bias layer formation. In CPP embodiments, the filler layer forms on a vertical back wall and electrically insulates the MR element from the bias layer.

Abstract: A method and system for providing a magnetic tunneling junction is disclosed. The method and system includes providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer. The free layer and the pinned layer are ferromagnetic. The barrier layer is an insulator. The magnetic tunneling junction is coupled to a bit line. The bit line includes a ferromagnetic liner and a nonmagnetic core. The nonmagnetic core includes a top, a bottom and sides. The ferromagnetic liner includes at least one tab and is adjacent to the sides and a portion of the bottom of the nonmagnetic core. The at least one tab is adjacent to the portion of the bottom of the nonmagnetic core.

Abstract: The present invention provides an improved bias magnet-to-magnetoresistive element interface and method of fabrication. In a preferred embodiment, the wall/walls of an MR element opposing a bias layer are formed by over etching to provide vertical side walls without taper. In the preferred embodiment, a protective element is formed over the MR element to protect it during etch processes. In some embodiments, a filler layer is deposited prior to bias layer formation. In CIP embodiments, any portion of the filler layer forming on vertical side walls of the MR element is etched to provide an exposed side wall surface for contiguous bias layer formation. In CPP embodiments, the filler layer forms on a vertical back wall and electrically insulates the MR element from the bias layer.

Abstract: The present invention provides an improved bias magnet-to-magnetoresistive element interface and method of fabrication. In a preferred embodiment, the wall/walls of an MR element opposing a bias layer are formed by over etching to provide vertical side walls without taper. In the preferred embodiment, a protective element is formed over the MR element to protect it during etch processes. In some embodiments, a filler layer is deposited prior to bias layer formation. In CIP embodiments, any portion of the filler layer forming on vertical side walls of the MR element is etched to provide an exposed side wall surface for contiguous bias layer formation. In CPP embodiments, the filler layer forms on a vertical back wall and electrically insulates the MR element from the bias layer.