Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a semiconductor structure with a p-type superlattice region, an i-type superlattice region, and an n-type superlattice region is disclosed. The semiconductor structure can have a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. In some cases, there are no abrupt changes in polarisation at interfaces between each region. At least one of the p-type superlattice region, the i-type superlattice region and the n-type superlattice region can comprise a plurality of unit cells exhibiting a monotonic change in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a semiconductor structure with a p-type superlattice region, an i-type superlattice region, and an n-type superlattice region is disclosed. The semiconductor structure can have a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. In some cases, there are no abrupt changes in polarisation at interfaces between each region. At least one of the p-type superlattice region, the i-type superlattice region and the n-type superlattice region can comprise a plurality of unit cells exhibiting a monotonic change in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: Embodiments may generally take the form of a degradable composite structure and a method for controlling the rate of degradation of a degradable composite structure. An example embodiment may take the form of a degradable polymer matrix composite (PMC) including a matrix having: a degradable polymer, a fiber reinforcement, and particulate fillers. The fiber loading is between approximately 10% to 70% by weight and the particulate loading is between approximately 5% to 60%.

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a semiconductor structure with a p-type superlattice region, an i-type superlattice region, and an n-type superlattice region is disclosed. The semiconductor structure can have a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. In some cases, there are no abrupt changes in polarisation at interfaces between each region. At least one of the p-type superlattice region, the i-type superlattice region and the n-type superlattice region can comprise a plurality of unit cells exhibiting a monotonic change in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: Plug and plug seat valves with selective orientation and engagement systems permit plugs to pass through a series of identically or similarly sized seats without the plugs mating with any of such seats before passing therethrough. Orientation systems may be employed in these valves such that the plug passes through each plug seat in a specific orientation in relation to the seat. The orientation systems may employ a steering track, such as rotational guide, to establish a desired relationship between features around the outer surface of the plug and the inner surface of the plug seat. Engagement systems may comprise one or more retractable elements on the plug which complement a receiving element of the plug seat. The orientation system may misalign the elements of the engagement system allowing a plug to pass an otherwise complementary plug seat.

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a semiconductor structure with a p-type superlattice region, an i-type superlattice region, and an n-type superlattice region is disclosed. The semiconductor structure can have a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. In some cases, there are no abrupt changes in polarisation at interfaces between each region. At least one of the p-type superlattice region, the i-type superlattice region and the n-type superlattice region can comprise a plurality of unit cells exhibiting a monotonic change in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: A system for use in treating a wellbore may include a tubular string deployed in the wellbore; and at least one valve assembly connected to the tubular string, each valve assembly for establishing communication between the tubular string and a formation zone, the at least one valve assembly comprises a sleeve having at least one fluid port therein that expands in an axial direction when the valve assembly opens to form a flowpath between an interior of the tubular string and the formation zone.

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: Embodiments may generally take the form of a degradable composite structure and a method for controlling the rate of degradation of a degradable composite structure. An example embodiment may take the form of a degradable polymer matrix composite (PMC) including a matrix having: a degradable polymer, a fiber reinforcement, and particulate fillers. The fiber loading is between approximately 10% to 70% by weight and the particulate loading is between approximately 5% to 60%.

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: Semiconductor structures and methods for forming those semiconductor structures are disclosed. For example, a p-type or n-type semiconductor structure is disclosed. The semiconductor structure has a polar crystal structure with a growth axis that is substantially parallel to a spontaneous polarization axis of the polar crystal structure. The semiconductor structure changes in composition from a wider band gap (WBG) material to a narrower band gap (NBG) material or from a NBG material to a WBG material along the growth axis to induce p-type or n-type conductivity.

Abstract: A system for use in treating a wellbore may include a tubular string deployed in the wellbore; and at least one valve assembly connected to the tubular string, each valve assembly for establishing communication between the tubular string and a formation zone, the at least one valve assembly comprises a sleeve having at least one fluid port therein that expands in an axial direction when the valve assembly opens to form a flowpath between an interior of the tubular string and the formation zone.

Abstract: A computer numerical control machine tool with a machine head having one or more process tools. The machine head is moveable with respect to a workpiece. A position sensor system detects the position of the machine head relative to the workpiece. A controller coupled to the position sensor system provides closed loop control of the position of the machine head relative to the workpiece. The position sensor system includes an ultrasonic probe. Also a method of controlling the position of a computer numerical control machine tool.

Abstract: A technique that is usable with a well includes communicating an untethered object in a passageway downhole in the well and using a cross-sectional dimension of the object and an axial dimension of the object to select a seat assembly of a plurality of seat assemblies to catch the object to form an obstruction in the well.

Abstract: Methods and apparatus to process network communications are disclosed. Example methods include determining, at a first edge router of an access network, if at least one of a source address or a destination address of a network communication is associated with a customer to receive a network-based service and forwarding the network communication from the first edge router to network equipment within the access network for routing to the destination address when the at least one of the source address or the destination address is not associated with the customer who is to receive the network-based service. Further methods include forwarding the network communication from the first edge router to a policy enforcement point within the access network when the at least one of the source address or the destination address is associated with the customer to receive the network-based service.

Abstract: Embodiments may include methods that include emplacing a degradable material into a wellbore, wherein the degradable material includes a thermoplastic elastomer; contacting the degradable material with an aqueous fluid downhole; and allowing the degradable material to at least partially degrade. In another aspect, methods may include emplacing into a wellbore a tool containing a sealing element thereon, wherein the sealing element contains a degradable material; engaging the sealing element with a downhole surface to establish a seal; contacting the sealing element with an aqueous fluid; and allowing the sealing element to at least partially degrade, thereby disrupting the established seal.