Abstract: A liquid filtration device that includes a cup assembly configured to carry an unfiltered liquid. The cup assembly includes a cup body for receiving the unfiltered liquid and a cup base configured to be removably coupled with the bottom end of the cup body. The liquid filtration device further includes a bottle assembly configured to be plunged into the top of the cup assembly in a plunging direction and seated within the cup assembly when fully plunged. The bottle assembly includes a port configured to be coupled with a filter cartridge and communicate the unfiltered liquid carried by the cup assembly through the filter cartridge to an interior of the bottle assembly. To extract the bottle assembly from the cup assembly, the cup base is uncoupled from the cup body and the bottle assembly is moved in the plunging direction past the bottom end of the cup body.

Abstract: Systems and/or methods can provide for solid-state refrigeration below 1 degree Kelvin. By applying a simple sequence of ac electrical signals to a gated semiconductor device, electrons are cooled in a refrigeration sequence that, in turn, provides cooling directly to the heat load of interest. Electrons in a single subband of a semiconductor quantum well are expanded adiabatically into several subbands, resulting in a temperature drop. Repeated application of this cycle at MHz-GHz frequencies results in a significant cooling power. The anticipated cooling powers can compete with today's standard cryogenic system, the dilution refrigerator, which represents the market standard for achieving cryogenic temperatures.

Abstract: Systems and methods include an electrical switch that establishes a first electrical conducting path between terminals of an electrical measurement apparatus through one or more electrical leads and an electrically-conductive sample in a first state, and a second electrical conducting path between the terminals through the one or more electrical leads while bypassing the sample in a second state. A voltage VS+L is measured across all of the sample and the one or more electrical leads in the first state, while a voltage VL is measured across the one or more electrical leads while bypassing the sample in the second state. Calculations according to the equation VS=VS+L?VL are performed to determine a precision DC voltage measurement of a voltage across the sample VS in the absence of Seebeck voltage offsets contributed by the one or more electrical leads.

Abstract: Woven flexible thermoelectric fabrics are provided. The fabric is a woven material that includes a series of longitudinal threads interwoven with a series of transverse threads. Within the longitudinal series, the threads have a repeating thread pattern of an n-type thermoelectric thread, a p-type thermoelectric thread, and an insulating thread. Within the transverse series, the threads have a repeating thread pattern of a first double-sided thread with conducting side down and insulating side up, a second double-sided thread with conducting side down and insulating side up, and a third double-sided thread with conducting side up and insulating side down.

Abstract: Systems and/or methods can provide for solid-state refrigeration below 1 degree Kelvin. By applying a simple sequence of ac electrical signals to a gated semiconductor device, electrons are cooled in a refrigeration sequence that, in turn, provides cooling directly to the heat load of interest. Electrons in a single subband of a semiconductor quantum well are expanded adiabatically into several subbands, resulting in a temperature drop. Repeated application of this cycle at MHz-GHz frequencies results in a significant cooling power. The anticipated cooling powers can compete with today's standard cryogenic system, the dilution refrigerator, which represents the market standard for achieving cryogenic temperatures.

Abstract: Systems and methods include an electrical switch that establishes a first electrical conducting path between terminals of an electrical measurement apparatus through one or more electrical leads and an electrically-conductive sample in a first state, and a second electrical conducting path between the terminals through the one or more electrical leads while bypassing the sample in a second state. A voltage VS+L is measured across all of the sample and the one or more electrical leads in the first state, while a voltage VL is measured across the one or more electrical leads while bypassing the sample in the second state. Calculations according to the equation VS=VS+L?VL are performed to determine a precision DC voltage measurement of a voltage across the sample VS in the absence of Seebeck voltage offsets contributed by the one or more electrical leads.

Abstract: A medical swab includes a hollow tube shaft that has a distal end and a proximal end. A swab tip is mounted to the hollow tube shaft such that a first portion of the swab tip is positioned within the distal end of the hollow tube shaft and a second portion of the swab tip extends out from the distal end of the hollow tube shaft.

Abstract: Woven flexible thermoelectric fabrics are provided. The fabric is a woven material that includes a series of longitudinal threads interwoven with a series of transverse threads. Within the longitudinal series, the threads have a repeating thread pattern of an n-type thermoelectric thread, a p-type thermoelectric thread, and an insulating thread. Within the transverse series, the threads have a repeating thread pattern of a first double-sided thread with conducting side down and insulating side up, a second double-sided thread with conducting side down and insulating side up, and a third double-sided thread with conducting side up and insulating side down.

Abstract: A transverse thermoelectric includes a first array of hole-conducting nanowires and a second array of electron-conducting nanowires positioned orthogonal to the first array of nanowires. A substrate provides structure to the first array of nanowires and the second array of nanowires.

Abstract: Systems and methods provide a device for characterizing a thin film, including a conducting or insulating substrate, an active layer on the conducting or insulating substrate to be characterized, and a plurality of stripline electrodes on the active layer. The plurality of stripline electrodes include a pitch width of a same order as the thickness of the active layer and strip width smaller than the thickness of the active layer.

Abstract: Systems and methods can provide a fast and accurate way to measure conductivity and Hall effect, such that transient conductivities, transient carrier densities or transient mobilities can be measured on millisecond time scales, for example. The systems and methods can also reduce the minimum magnetic field needed to extract carrier density or mobility of a given sample, and reduce the minimum mobility that can be measured with a given magnetic field.

Abstract: A system and a method determine a quality of a doped semiconductor layer in terms of a charge carrier density gradient by measuring two magnetic-field-dependent resistances using four contacts of a specimen.

Abstract: Systems and methods can provide a fast and accurate way to measure conductivity and Hall effect, such that transient conductivities, transient carrier densities or transient mobilities can be measured on millisecond time scales, for example. The systems and methods can also reduce the minimum magnetic field needed to extract carrier density or mobility of a given sample, and reduce the minimum mobility that can be measured with a given magnetic field.

Abstract: Systems and methods provide a device for characterizing a thin film, including a conducting or insulating substrate, an active layer on the conducting or insulating substrate to be characterized, and a plurality of stripline electrodes on the active layer. The plurality of stripline electrodes include a pitch width of a same order as the thickness of the active layer and strip width smaller than the thickness of the active layer.

Abstract: A probe assembly includes plural capacitive contacts that are separate from each other and a conductive depletion gate disposed between and separating the contacts from each other. The depletion gate is configured to receive a direct electric voltage to deplete regions of a sample under test of electrons. The contacts are configured to be placed in close proximity to a buried conducting layer in the sample under test without engaging the buried conducting layer, thereby capacitively coupling to the buried conducting layer. A first subset of the capacitive contacts is configured to apply an alternating electric current to a portion of the sample under test and a second subset of the capacitive contacts is configured to sense an alternating voltage response of the portion of the sample under test to characterize one or more electrical properties of the sample under test without the capacitive contact with the buried conductive layer.

Abstract: A system and a method determine a quality of a doped semiconductor layer in terms of a charge carrier density gradient by measuring two magnetic-field-dependent resistances using four contacts of a specimen.

Abstract: A transverse thermoelectric includes a first array of hole-conducting nanowires and a second array of electron-conducting nanowires positioned orthogonal to the first array of nanowires. A substrate provides structure to the first array of nanowires and the second array of nanowires.

Abstract: A probe assembly includes plural capacitive contacts that are separate from each other and a conductive depletion gate disposed between and separating the contacts from each other. The depletion gate is configured to receive a direct electric voltage in order to deplete regions of a sample under test of electrons. The contacts are configured to be placed in close proximity to a buried conducting layer in the sample under test without engaging the buried conducting layer, thereby capacitively coupling to the buried conducting layer. A first subset of the capacitive contacts is configured to apply an alternating electric current to a portion of the sample under test and a second subset of the capacitive contacts is configured to sense an alternating voltage response of the portion of the sample under test in order to characterize one or more electrical properties of the sample under test without the capacitive contacts having ohmic contact with the buried conducting layer.

Abstract: A transverse thermoelectric device includes a superlattice body, electrically conductive first and second contacts, and first and second thermal contacts. The superlattice body extends between opposite first and second ends along a first direction and between opposite first and second sides along a different, second direction. The superlattice body includes alternating first and second layers of crystalline materials oriented at an oblique angle relative to the first direction. The electrically conductive first contact is coupled with the first end of the superlattice and the electrically conductive second contact is coupled with the second end of the superlattice. The first thermal contact is thermally coupled to the first side of the superlattice and the second thermal contact is thermally coupled to the second side of the superlattice. A Seebeck tensor of the superlattice body is ambipolar.