Abstract: In some embodiments, a multistate memory cell includes; a storage loop comprising one or more superconducting devices and one or more inductive devices, the storage loop configured to maintain a quantized magnetic field representing a stored state of the multistate memory cell, the stored state from among a set of three or more distinct digital states; and at least three address lines each inductively coupled to the storage loop, wherein, in response to currents applied to the at least three address lines, the inductive couplings of the at least three address lines combine to force the quantized magnetic field to represent a particular one of the three or more distinct digital states.

Abstract: A switched capacitor circuit includes a threshold detector to generate a threshold detection signal when a difference between first and second input signals crosses a predetermined level. A coarse current source produces a coarse ramp. A series sampling capacitor samples a coarse output voltage when the threshold detector indicates a first threshold crossing. The sampling capacitor is connected in series with a fine current source producing a fine ramp.

Abstract: A switched capacitor circuit includes a threshold detector to generate a threshold detection signal when a difference between first and second input signals crosses a predetermined level. A coarse current source produces a coarse ramp. A series sampling capacitor samples a coarse output voltage when the threshold detector indicates a first threshold crossing. The sampling capacitor is connected in series with a fine current source producing a fine ramp.