Abstract: Methods of manufacturing heterojunction bipolar transistors are described herein. An exemplary method can include providing an emitter/base stack comprising a substrate, a base over the substrate, and/or an emitter over the base. The exemplary method further can include forming a collector. The exemplary method also can include wafer bonding the base to the collector. Other embodiments are also disclosed herein.

Abstract: A semiconductor device having a GeSiSn base region combined with an emitter region and a collector region can be used to fabricate a bipolar transistor or a heterojunction bipolar transistor. The GeSiSn base region can be compositionally graded or latticed matched or strained to GaAs. The GeSiSn base region can be wafer bonded to a GaN or SiC collector region.

Abstract: The methods of manufacture of GeSiSn heterojunction bipolar transistors, which include light emitting transistors and transistor lasers and photo-transistors and their related structures are described herein. Other embodiments are also disclosed herein.

Abstract: Methods of manufacturing heterojunction bipolar transistors are described herein. An exemplary method can include providing an emitter/base stack comprising a substrate, a base over the substrate, and/or an emitter over the base. The exemplary method further can include forming a collector. The exemplary method also can include wafer bonding the base to the collector. Other embodiments are also disclosed herein.

Abstract: Methods of manufacturing a heterojunction bipolar transistor are described herein. An exemplary method can include providing a base/emitter stack, the base/emitter stack comprising a substrate, an etch stop layer over the substrate, an emitter contact layer over the etch stop layer, an emitter over the emitter contact layer, and/or a base over the emitter. The exemplary method further can include forming a collector. The exemplary method also can include wafer bonding the base to the collector. Other embodiments are also disclosed herein.

Abstract: Wafer bonded GaN monolithic integrated circuits and methods of manufacture of wafer bonded GaN monolithic integrated circuits and their related structures for electronic and photonic integrated circuits and for multi-functional integrated circuits, are described herein. Other embodiments are also disclosed herein.

Abstract: Methods of manufacturing a heterojunction bipolar transistor are described herein. An exemplary method can include providing a base/emitter stack, the base/emitter stack comprising a substrate, an etch stop layer over the substrate, an emitter contact layer over the etch stop layer, an emitter over the emitter contact layer, and/or a base over the emitter. The exemplary method further can include forming a collector. The exemplary method also can include wafer bonding the base to the collector. Other embodiments are also disclosed herein.

Abstract: Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein. Other embodiments are also disclosed herein.

Abstract: The methods of manufacture of GeSiSn heterojunction bipolar transistors, which include light emitting transistors and transistor lasers and photo-transistors and their related structures are described herein. Other embodiments are also disclosed herein.

Abstract: Wafer bonded GaN monolithic integrated circuits and methods of manufacture of wafer bonded GaN monolithic integrated circuits and their related structures for electronic and photonic integrated circuits and for multi-functional integrated circuits, are described herein. Other embodiments are also disclosed herein.

Abstract: Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein. Other embodiments are also disclosed herein.

Abstract: Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein. Other embodiments are also disclosed herein.

Abstract: Methods of manufacture of advanced heterojunction transistors and transistor lasers, and their related structures, are described herein. Other embodiments are also disclosed herein.

Abstract: This description relates to an apparatus, a method of manufacturing, and a method of tuning optical and/or electrical parameters of semiconductor devices and materials, thin film materials, or other devices. In one example, a laser is tuned to produce an adjustable output wavelength by coupling the laser to a tuning material or base such as, for example, a piezoelectric base using a suitable attachment method. The laser includes of a tunable material that is sensitive to stress and/or strain. Stress and/or strain applied to the laser from the tuning material results in an electronically variable output wavelength. As an example, applying a voltage to a piezoelectric base that serves as a tuning material can cause the base to expand or contract, and the expansions and contractions from the base are coupled to the tunable material of the laser, thus varying the wavelength of the output light from the laser.

Abstract: Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein. Other embodiments are also disclosed herein.

Abstract: This description relates to an apparatus, a method of manufacturing, and a method of tuning optical and/or electrical parameters of semiconductor devices and materials, thin film materials, or other devices. In one example, a laser is tuned to produce an adjustable output wavelength by coupling the laser to a tuning material or base such as, for example, a piezoelectric base using a suitable attachment method. The laser includes of a tunable material that is sensitive to stress and/or strain. Stress and/or strain applied to the laser from the tuning material results in an electronically variable output wavelength. As an example, applying a voltage to a piezoelectric base that serves as a tuning material can cause the base to expand or contract, and the expansions and contractions from the base are coupled to the tunable material of the laser, thus varying the wavelength of the output light from the laser.

Abstract: This description relates to an apparatus, a method of manufacturing, and a method of tuning optical and/or electrical parameters of semiconductor devices and materials, thin film materials, or other devices. In one example, a laser is tuned to produce an adjustable output wavelength by coupling the laser to a tuning material or base such as, for example, a piezoelectric base using a suitable attachment method. The laser includes of a tunable material that is sensitive to stress and/or strain. Stress and/or strain applied to the laser from the tuning material results in an electronically variable output wavelength. As an example, applying a voltage to a piezoelectric base that serves as a tuning material can cause the base to expand or contract, and the expansions and contractions from the base are coupled to the tunable material of the laser, thus varying the wavelength of the output light from the laser.

Abstract: This description relates to an apparatus, a method of manufacturing, and a method of tuning optical and/or electrical parameters of semiconductor devices and materials, thin film materials, or other devices. In one example, a laser is tuned to produce an adjustable output wavelength by coupling the laser to a tuning material or base such as, for example, a piezoelectric base using a suitable attachment method. The laser includes of a tunable material that is sensitive to stress and/or strain. Stress and/or strain applied to the laser from the tuning material results in an electronically variable output wavelength. As an example, applying a voltage to a piezoelectric base that serves as a tuning material can cause the base to expand or contract, and the expansions and contractions from the base are coupled to the tunable material of the laser, thus varying the wavelength of the output light from the laser.

Abstract: This description relates to an apparatus, a method of manufacturing, and a method of tuning optical and/or electrical parameters of semiconductor devices and materials, thin film materials, or other devices. In one example, a laser is tuned to produce an adjustable output wavelength by coupling the laser to a tuning material or base such as, for example, a piezoelectric base using a suitable attachment method. The laser includes of a tunable material that is sensitive to stress and/or strain. Stress and/or strain applied to the laser from the tuning material results in an electronically variable output wavelength. As an example, applying a voltage to a piezoelectric base that serves as a tuning material can cause the base to expand or contract, and the expansions and contractions from the base are coupled to the tunable material of the laser, thus varying the wavelength of the output light from the laser.