Abstract: A low resistance magnetic tunnel junction device, such as a memory cell in a nonvolatile magnetic random access memory (MRAM) array or a magnetoresistive read head in a magnetic recording disk drive, has a titanium oxynitride (TiOxNy) layer as the single-layer tunnel barrier or as one of the layers in a bilayer tunnel barrier. In a bilayer barrier the other barrier layer is an oxide or nitride of Al, Si, Mg, Ta, [[Si]] and Y, such as Al2O3, AlN, Si3N4, MgO, Ta2O5, TiO2, or Y2O3. The Ti barrier material can be alloyed with other known metals, such as Al and Mg, to produce barriers with TiAlOxNy and TiMgOxNy compositions.

Abstract: A low resistance magnetic tunnel junction device, such as a memory cell in a nonvolatile magnetic random access memory (MRAM) array or a magnetoresistive read head in a magnetic recording disk drive, has a titanium oxynitride (TiOxNy) layer as the single-layer tunnel barrier or as one of the layers in a bilayer tunnel barrier. In a bilayer barrier the other barrier layer is an oxide or nitride of Al, Si, Mg, Ta, Si and Y, such as Al2O3, AlN, Si3N4, MgO, Ta2O5, TiO2, or Y2O3. The Ti barrier material can be alloyed with other known metals, such as Al and Mg, to produce barriers with TiAlOxNy and TiMgOxNy compositions.

Abstract: A dual-layer type perpendicular magnetic recording disk for use in a perpendicular magnetic recording system that uses a single pole recording head has a laminated underlayer that has at least two ferromagnetic films exchange-coupled across an antiferromagnetic coupling layer. The magnetic moments of the ferromagnetic layers in the laminated underlayer are oriented antiparallel. The laminated underlayer provides a soft magnetically permeable flux return path without undesirable domain walls and associated media noise, with controllable permeability and minimization of saturation of the upper ferromagnetic layers. In one embodiment the moments of the ferromagnetic layers in the underlayer are oriented generally radially on the disk. In another embodiment the moments are oriented generally circumferentially in the track direction on the disk, so that the beneficial effect of the soft magnetic underlayer occurs primarily only during the writing process.

Abstract: A compact read/write head having a biased giant magnetoresistive sensor. Permanent magnet films are placed adjacent to the giant magnetoresistive sensor operating in the current-perpendicular-to the-plane (Cpp) mode and spaced with respect to the sensor by conducting films. These permanent magnet films provide a magnetic bias. The bias field is substantial and fairly uniform across sensor height. Biasing of the giant magnetoresistive sensor provides distinguishable response to the rising and falling edges of a recorded pulse on an adjacent recording medium, improves the linearity of the response, and helps to reduce noise. This read/write head is much simpler to fabricate and pattern and provides an enhanced uniformity of the bias field throughout the sensor.