Patents by Inventor Matthew J. Comard

Matthew J. Comard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integration of semiconductor on implanted insulator
    Patent number: 6768130
    Abstract: A method of forming a semiconductor on insulator structure in a monolithic semiconducting substrate with a bulk semiconductor structure. A first portion of a surface of the monolithic semiconducting substrate is recessed without effecting a second portion of the surface of the monolithic semiconducting substrate. An insulator precursor species is implanted beneath the surface of the recessed first portion of the monolithic semiconducting substrate, and a trench is etched around the implanted and recessed first portion of the monolithic semiconducting substrate. The insulator precursor species is activated to form an insulator layer beneath the surface of the recessed first portion of the monolithic semiconducting substrate. The semiconductor on insulator structure is formed in the first portion of the monolithic semiconducting substrate, and the bulk semiconductor structure is formed in the second portion of the monolithic semiconducting substrate.
    Type: Grant
    Filed: June 24, 2003
    Date of Patent: July 27, 2004
    Assignee: LSI Logic Corporation
    Inventor: Matthew J. Comard
  • Integration of semiconductor on implanted insulator
    Publication number: 20040082132
    Abstract: A method of forming a semiconductor on insulator structure in a monolithic semiconducting substrate with a bulk semiconductor structure. A first portion of a surface of the monolithic semiconducting substrate is recessed without effecting a second portion of the surface of the monolithic semiconducting substrate. An insulator precursor species is implanted beneath the surface of the recessed first portion of the monolithic semiconducting substrate, and a trench is etched around the implanted and recessed first portion of the monolithic semiconducting substrate. The insulator precursor species is activated to form an insulator layer beneath the surface of the recessed first portion of the monolithic semiconducting substrate. The semiconductor on insulator structure is formed in the first portion of the monolithic semiconducting substrate, and the bulk semiconductor structure is formed in the second portion of the monolithic semiconducting substrate.
    Type: Application
    Filed: June 24, 2003
    Publication date: April 29, 2004
    Applicant: LSI Logic Corporation
    Inventor: Matthew J. Comard
  • Forming a semiconductor on implanted insulator
    Patent number: 6613639
    Abstract: A method of forming a semiconductor on insulator structure in a monolithic semiconducting substrate with a bulk semiconductor structure. A first portion of a surface of the monolithic semiconducting substrate is recessed without effecting a second portion of the surface of the monolithic semiconducting substrate. An insulator precursor species is implanted beneath the surface of the recessed first portion of the monolithic semiconducting substrate, and a trench is etched around the implanted and recessed first portion of the monolithic semiconducting substrate. The insulator precursor species is activated to form an insulator layer beneath the surface of the recessed first portion of the monolithic semiconducting substrate. The semiconductor on insulator structure is formed in the first portion of the monolithic semiconducting substrate, and the bulk semiconductor structure is formed in the second portion of the monolithic semiconducting substrate.
    Type: Grant
    Filed: January 30, 2002
    Date of Patent: September 2, 2003
    Assignee: LSI Logic Corporation
    Inventor: Matthew J. Comard