Abstract: Techniques are provided herein to form semiconductor devices that include gate cuts with different widths (e.g., at least a 1.5× difference in width) but substantially the same height (e.g., less than 5 nm difference in height). A given gate structure extending over one or more semiconductor regions may be interrupted with any number of gate cuts that each extend through an entire thickness of the gate structure. According to some embodiments, gate cuts of a similar first width are formed via a first etching process while gate cuts of a similar second width that is greater than the first width are formed via a second etching process that is different from the first etching process. Using different etch processes for gate cuts of different widths maintains a similar height for the gate cuts of different widths.

Abstract: Techniques are provided herein to form semiconductor devices that include a gate cut formed after the formation of source/drain contacts. In an example, a semiconductor device includes a gate structure around or otherwise on a semiconductor region that extends from a source region to a drain region. Conductive contacts formed over the source and drain regions along a source/drain trench. The gate structure may be interrupted with a dielectric gate cut that further extends past the gate trench and into the source/drain trench where it can cut into one or more of the contacts. The contacts are formed before the gate cut to ensure complete fill of conductive material when forming the contacts. Accordingly, a liner structure on the conductive contacts is also broken by the intrusion of the gate cut and does not extend further up or down the sidewalls of the gate cut.

Abstract: Techniques are provided to form semiconductor devices that include one or more gate cuts having a layer of polymer material at edges of the gate cut. The polymer layer may be provided as a byproduct of the etching process used to form the gate cut recess through the gate structure, and can protect any exposed portions of the source or drain regions from certain subsequent processes. The gate structure may be interrupted between two transistors with a gate cut that extends through an entire thickness of the gate structure and includes a dielectric material to electrically isolate the portions of the gate structure on either side of the gate cut. The edges of the gate cut may be lined with a polymer layer that is also on any exposed portions of the source or drain regions that were exposed during the etching process used to form the gate cut recess.

Abstract: Techniques are provided herein to form semiconductor devices that include one or more gate cuts having a very high aspect ratio (e.g., an aspect ratio of 5:1 or greater, such as 10:1). In an example, a semiconductor device includes a conductive material that is part of a transistor gate structure around or otherwise on a semiconductor region. The semiconductor region can be, for example, a fin of semiconductor material that extends between a source region and a drain region, or one or more nanowires or nanoribbons of semiconductor material that extend between a source region and a drain region. The gate structure may be interrupted between two transistors with a gate cut that extends through an entire thickness of the gate structure. A particular plasma etching process may be performed to form the gate cut with a very high height-to-width aspect ratio so as to enable densely integrated devices.

Abstract: Techniques are described to form semiconductor devices that include one or more gate cuts having a very high aspect ratio (e.g., an aspect ratio of 5:1 or greater). A semiconductor device includes a conductive material that is part of a transistor gate structure around or otherwise on a semiconductor region. The gate structure may be interrupted between two transistors with a gate cut that extends through an entire thickness of the gate structure. A plasma etching process may be performed to form the gate cut with a very high height-to-width aspect ratio with little to no tapering in its sidewall profile, so as to enable densely integrated devices. Furthermore, an etching process may be performed on a gate masking structure used to pattern the location of the gate cuts to ensure that the gate masking structure has low sidewall taper and sufficiently opened enough to expose the underlying gate.

Abstract: A mounting platform is provided for securing munitions. The platform includes a flat plate, a front block and a rear block. The plate includes a plurality of cutout holes. The front block has a first saddle disposed between first flanking ends and at least one extension at one of the flanking ends for inserting into a first opening of the cutouts. The rear block has a second saddle disposed between second flanking ends at least one extension for inserting into a second opening of the cutouts. The munitions are disposable atop the first and second saddles of the front and rear blocks. The munitions are restrained axially against a rear stop block and laterally by the saddles and straps.

Abstract: Systems and methods are disclosed that provide smart alerts to users, e.g., alerts to users about diabetic states that are only provided when it makes sense to do so, e.g., when the system can predict or estimate that the user is not already cognitively aware of their current condition, e.g., particularly where the current condition is a diabetic state warranting attention. In this way, the alert or alarm is personalized and made particularly effective for that user. Such systems and methods still alert the user when action is necessary, e.g., a bolus or temporary basal rate change, or provide a response to a missed bolus or a need for correction, but do not alert when action is unnecessary, e.g., if the user is already estimated or predicted to be cognitively aware of the diabetic state warranting attention, or if corrective action was already taken.

Abstract: The suspended solids content of a process stream in a process for producing alumina is reduced by contacting the stream with silicon-containing polymers provided by water-in-oil compositions.

Abstract: A flocculant composition that includes a blend of a first water-in-oil emulsion having a silicon-containing polymer in its aqueous phase and a second water-in-oil emulsion having an anionic polymer in its aqueous phase. The silicon-containing polymer and the anionic polymer are present in the composition at a weight ratio between 100:1 and 1:100.

Abstract: The suspended solids content of a process stream in a process for digesting bauxite ore to produce alumina is reduced by contacting the stream with silicon-containing polymers.

Abstract: The suspended solids content of a process stream in a process for digesting bauxite ore to produce alumina is reduced by contacting the stream with silicon-containing polymers.

Abstract: The present invention provides an erythema meter comprising a light guide that carries light of two specific wavelengths (probing and reference) at two distinct frequencies that are generated and modulated by a either a single or multiple source(s), a photodetector mounted in the tip of the guide that receives light reflected from the surface being examined, and circuitry electrically coupled to the guide for processing the light data, and determining the level of erythema present on the examined surface. The probing and reference wavelengths are delivered in sinusoidal or amplitude modulated fashion, thereby permitting electronic filtering of the received data. A calculating circuit determines the quotient of the two wavelengths after having been reflected off of a surface, such as mucosal or dermal surfaces, which is representative of the severity of erythema present in the surface.

Abstract: The present invention provides an erythema meter comprising a light guide that carries light of two specific wavelengths (probing and reference) at two distinct frequencies that are generated and modulated by a either a single or multiple source(s), a photodetector mounted in the tip of the guide that receives light reflected from the surface being examined, and circuitry electrically coupled to the guide for processing the light data, and determining the level of erythema present on the examined surface. The probing and reference wavelengths are delivered in sinusoidal or amplitude modulated fashion, thereby permitting electronic filtering of the received data.