Abstract: Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Abstract: Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.

Abstract: The present disclosure can provide for an ultrasonic welding method for a pair of workpieces. The method can include first pressing an ultrasonic welding stack against a first workpiece in the pair so that the first workpiece comes into contact with a second workpiece in the pair. The method can then provide for initiating a weld phase by outputting energy from the ultrasonic welding stack to the first workpiece. The method can provide for monitoring, with at least one sensor, a sensed parameter. The sensed parameter can be, for example, weld force and/or weld force rate of change. The method can provide for determining whether the sensed parameter has reached a predetermined level. Based on determining that the sensed parameter has reached the predetermined level, the method can provide for ending the weld phase.

Abstract: Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.

Abstract: A CubeSat side panel with an additional storage compartment includes a satellite endcap, a hinge assembly, and at least one CubeSat component. A plurality of lateral lips and a top extremity of the satellite endcap delineate a storage compartment within the satellite endcap. The storage compartment allows the Cubesat component to be mounted upon an inner surface of the satellite endcap. The hinge assembly connects the satellite endcap to a frame of the CubeSat thus allowing the CubeSat side panel to open upward and away from the CubeSat. Resultantly, the hinge assembly provides easy access to the Cubesat component of the satellite endcap and other existing components that are positioned within the frame of the CubeSat.

Abstract: A miniature satellite that uses a modified structural frame in order to store and disperse propulsion fuel efficiently. The modified structural frame includes a plurality of structural members. Each of the plurality of structural members includes a tubular body, a first endcap, a second endcap, an outlet port, and an inlet port. The first endcap and the second endcap are oppositely positioned within the tubular body. The first endcap and the second endcap are each perimetrically connected to the tubular body in order to delineate a fuel storage volume. The inlet port is positioned in between the first endcap and the second endcap and is mechanically integrated into the tubular body. The outlet port disperses propulsion fuel and is also mechanically integrated into the tubular body. The inlet port is in fluid communication with the outlet port through the tubular body. Additionally, the structural members are mounted amongst each other.

Abstract: A miniature satellite that uses a modified structural frame in order to store and disperse propulsion fuel efficiently. The modified structural frame includes a plurality of structural members. Each of the plurality of structural members includes a tubular body, a first endcap, a second endcap, an outlet port, and an inlet port. The first endcap and the second endcap are oppositely positioned within the tubular body. The first endcap and the second endcap are each perimetrically connected to the tubular body in order to delineate a fuel storage volume. The inlet port is positioned in between the first endcap and the second endcap and is mechanically integrated into the tubular body. The outlet port disperses propulsion fuel and is also mechanically integrated into the tubular body. The inlet port is in fluid communication with the outlet port through the tubular body. Additionally, the structural members are mounted amongst each other.

Abstract: A single-layer combined power, intelligence, and communications capable modular integrated stackable layer (MISL) combines the functionalities of power management, intelligence, and communications into a single flattened MISL layer in order to reduce the physical volume occupied by a MISL stack.

Abstract: A CubeSat side panel with an additional storage compartment includes a satellite endcap, a hinge assembly, and at least one CubeSat component. A plurality of lateral lips and a top extremity of the satellite endcap delineate a storage compartment within the satellite endcap. The storage compartment allows the Cubesat component to be mounted upon an inner surface of the satellite endcap. The hinge assembly connects the satellite endcap to a frame of the CubeSat thus allowing the CubeSat side panel to open upward and away from the CubeSat. Resultantly, the hinge assembly provides easy access to the Cubesat component of the satellite endcap and other existing components that are positioned within the frame of the CubeSat.

Abstract: A system and method of operating a system for controlling an unmanned aerial vehicle over a cellular network provides capability for UAV operators to control the UAV without requiring the operator to be within a limited range of the UAV, enabling non-line-of-sight control. A command and control station is communicatively coupled to the cellular network, which is in turn communicatively coupled to the UAV. Video streaming capability is provided, in addition to a modular circuitry unit capable of accepting a wide variety of customizable circuitry units designed for various specific purposes and capabilities.