Abstract: A technique of producing a liquid crystal device, comprising: providing an assembly comprising a liquid crystal material contained directly between a polariser component and a first control component including a stack of layers defining electrical control circuitry; and containing further liquid crystal material directly between said polariser component of said assembly and another control component including another stack of layers defining electrical control circuitry.

Abstract: A technique of producing a liquid crystal device, comprising: providing an assembly (D) comprising a liquid crystal material (24) contained directly between a polariser component (14, 10, 8, 12, 16) and a first control component including a stack of layers (2) defining electrical control circuitry; and containing further liquid crystal material directly between said polariser component of said assembly (D) and another control component (C) including another stack of layers (20) defining electrical control circuitry.

Abstract: A technique of producing a liquid crystal device, comprising: providing an assembly (D) comprising a liquid crystal material (24) contained directly between a polariser component (14, 10, 8, 12, 16) and a first control component including a stack of layers (2) defining electrical control circuitry; and containing further liquid crystal material directly between said polariser component of said assembly (D) and another control component (C) including another stack of layers (20) defining electrical control circuitry.

Abstract: A device, comprising: an unplanarised plastic substrate; an electrically and/or optically functional layer formed on the unplanarised substrate; a planarisation layer formed over the functional layer; at least a first conductor layer and a semiconductor layer formed over the planarization layer, wherein the first conductor layer defines at least source and drain electrode circuitry for one or more transistor devices, and the semiconductor layer defines semiconductor channels for said one or more transistor devices.

Abstract: A device, comprising: a display component; and a drive component comprising a stack of layers defining an array of display pixel conductors each connected within the stack of layers to a drive conductor by a respective radiation-sensitive channel, wherein a change in the intensity of radiation to which a radiation-sensitive channel is exposed causes a change in the electric potential at the respective display pixel conductor relative to a drive voltage applied to the drive conductor and the change in the electric potential at the respective display pixel conductor causes a change in the display of the respective pixel area of the display component.

Abstract: A method of producing a transistor array, comprising an array of addressing conductors each providing the source electrodes of a respective set of transistors and at least part of a conductive connection between a respective driver terminal and said source electrodes; wherein the method comprises: forming a conductor layer on a support; and displacing a plurality of portions of said conductor layer relative to other portions of said conductor layer to create from said conductor layer at least (i) said array of addressing conductors and an array of drain conductors at said first level, (ii) conductor element islands in transistor channel regions at a second level, and (iii) one or more further conductor elements at a third level.