Patents by Inventor Matthew K. Emsley

Matthew K. Emsley has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7501303
    Abstract: A silicon wafer having a distributed Bragg reflector buried within it. The buried reflector provides a high efficiency, readily and accurately manufactured reflector with a body of silicon. A photodetector using the buried layer to form a resonant cavity enhancement of the silicon's basic quantum efficiencies and selectivity is provided. The DBR is created by bonding of two or more substrates together at a silicon oxide interface or an oxide-oxide interface. In the former, an hydrogen implant is used to cleave silicon just above the bond line. In the latter, the bonding is at the oxide layers.
    Type: Grant
    Filed: March 1, 2004
    Date of Patent: March 10, 2009
    Assignee: The Trustees of Boston University
    Inventors: M. Selim Unlu, Matthew K. Emsley
  • Publication number: 20040169245
    Abstract: A silicon wafer having a distributed Bragg reflector buried within it. The buried reflector provides a high efficiency, readily and accurately manufactured reflector with a body of silicon. A photodetector using the buried layer to form a resonant cavity enhancement of the silicon's basic quantum efficiencies and selectivity is provided. The DBR is created by bonding of two or more substrates together at a silicon oxide interface or an oxide-oxide interface. In the former, an hydrogen implant is used to cleave silicon just above the bond line. In the latter, the bonding is at the oxide layers.
    Type: Application
    Filed: March 1, 2004
    Publication date: September 2, 2004
    Applicant: THE TRUSTEES OF BOSTON UNIVERSITY
    Inventors: M. Selim Unlu, Matthew K. Emsley