Abstract: Disclosed are etching compositions and processes of using the same for etching the surface of CdTe-containing layers.

Abstract: This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer.

Abstract: This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer.

Abstract: Compositions and methods suitable for the electrochemical mechanical planarization of a conductive material layer on a semiconductor workpiece. Compositions contain a phosphonic acid based electrolyte, a corrosion inhibitor, a chelating agent, a pH adjusting agent, and a solvent as the remainder.

Abstract: This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Abstract: This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Abstract: This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an acidic chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant organic (such as carbon) contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer. Using acidic chemistry, it is possible to match the pH of the cleaning solution used after CMP to that of the last slurry used on the wafer surface.

Abstract: Provided are methods and systems for controlling the concentration of a component in a composition, and semiconductor processing methods and systems. One exemplary method of controlling the concentration of a component in a composition involves: providing a composition which has a liquid portion, wherein the liquid portion contains a component to be monitored; performing an absorption spectroscopy measurement on a sample of the composition; and controlling the concentration of the component in the composition based on the absorption spectroscopy measurement using a feedback control loop. The invention allows for controlling the concentration of a component in a composition, for example, a corrosion inhibitor in a chemical planarization (CMP) chemical, as well as in pre- and post-CMP storage/treatment chemicals, and can provide real time, accurate process control in a simple and robust manner.

Abstract: Provided are methods and systems for controlling the concentration of a component in a composition, and semiconductor processing methods and systems. One exemplary method of controlling the concentration of a component in a composition involves: providing a composition which has a liquid portion, wherein the liquid portion contains a component to be monitored; performing an absorption spectroscopy measurement on a sample of the composition; and controlling the concentration of the component in the composition based on the absorption spectroscopy measurement using a feedback control loop. The invention allows for controlling the concentration of a component in a composition, for example, a corrosion inhibitor in a chemical planarization (CMP) chemical, as well as in pre- and post-CMP storage/treatment chemicals, and can provide real time, accurate process control in a simple and robust manner.

Abstract: A method and apparatus for performing online monitoring of a chemical state of a process material. A request to provide a process chemical to a processing tool is received. The process chemical is transported through a chemical transport unit, based upon the request, to the processing tool. An online monitoring of a chemical state of the process chemical is performed. The online monitoring of the process chemical includes analyzing a resultant of a radiation signal sent through the process chemical to determine a refractive index to determine whether the chemical state of the process chemical is within a predetermined level of tolerance.

Abstract: A method and apparatus for performing online monitoring of a physical characteristic of a process material. A request to provide a slurry to a processing tool is received. The slurry is transported through a slurry transport unit, based upon the request, to the processing tool. An online monitoring of a physical characteristic of the slurry is performed. The online monitoring of the slurry includes analyzing an optical signal sent through the slurry to determine whether the physical characteristic of the slurry is within a predetermined level of tolerance.

Abstract: Provided are methods and systems for controlling the concentration of a component in a composition, and semiconductor processing methods and systems. One exemplary method of controlling the concentration of a component in a composition involves: providing a composition which has a liquid portion, wherein the liquid portion contains a component to be monitored; performing an absorption spectroscopy measurement on a sample of the composition; and controlling the concentration of the component in the composition based on the absorption spectroscopy measurement using a feedback control loop. The invention allows for controlling the concentration of a component in a composition, for example, a corrosion inhibitor in a chemical planarization (CMP) chemical, as well as in pre- and post-CMP storage/treatment chemicals, and can provide real time, accurate process control in a simple and robust manner.

Abstract: Methods of removing discoloration from a metal surface of an electronic device are presented the methods comprising the steps of exposing a metallic surface of an electronic device to a first composition comprising an organic reagent, the metallic surface having discoloration thereon, under conditions sufficient to form a first intermediate metallic surface substantially devoid of non-ionic residues; a second step of contacting the first intermediate metallic surface with a second composition comprising an acid under conditions sufficient to form a second intermediate metallic surface substantially devoid of non-ionic residues, oxides, hydroxides and the like; and rinsing the second intermediate metallic surface with deionized water.

Abstract: Provided are methods and systems for controlling the concentration of a component in a composition, and semiconductor processing methods and systems. One exemplary method of controlling the concentration of a component in a composition involves: providing a composition which has a liquid portion, wherein the liquid portion contains a component to be monitored; performing an absorption spectroscopy measurement on a sample of the composition; and controlling the concentration of the component in the composition based on the absorption spectroscopy measurement using a feedback control loop. The invention allows for controlling the concentration of a component in a composition, for example, a corrosion inhibitor in a chemical planarization (CMP) chemical, as well as in pre- and post-CMP storage/treatment chemicals, and can provide real time, accurate process control in a simple and robust manner.

Abstract: Methods of removing discoloration from a metal surface of an electronic device are presented the methods comprising the steps of exposing a metallic surface of an electronic device to a first composition comprising an organic reagent, the metallic surface having discoloration thereon, under conditions sufficient to form a first intermediate metallic surface substantially devoid of non-ionic residues; a second step of contacting the first intermediate metallic surface with a second composition comprising an acid under conditions sufficient to form a second intermediate metallic surface substantially devoid of non-ionic residues, oxides, hydroxides and the like; and rinsing the second intermediate metallic surface with deionized water.

Abstract: A method of determining a concentration of a component of a slurry includes the step of measuring change in refractive index associated with changes in concentration of the component of interest in the slurry.