Abstract: A method of cleaning a surface of a photomask by removing contaminants from its surface that includes placing the photomask in a vessel, which is held under an elevated pressure and feeding a supercritical fluid, in particular, CO2 in a supercritical state, to the vessel. An additive, such as alcohol, water ketones, esters, surfactants, and organic solvents, can be added to the fluid. The vessel can be held under a pressure higher than the critical pressure of the fluid and at a temperature higher than the critical temperature of the fluid.

Abstract: A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.

Abstract: A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.

Abstract: A method of cleaning a surface of a photomask includes placing the photomask in a vessel, which is held under an elevated pressure and feeding a supercritical fluid, in particular, CO2 in a supercritical state, to the vessel. As a result, contaminants are efficiently removed from the photomask surface. An additive, such as alcohol, water ketones, esters, surfactants, and organic solvents, can be added to the fluid. The vessel can be held under a pressure higher than the critical pressure of the fluid and at a temperature higher than the critical temperature of the fluid.

Abstract: A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.

Abstract: A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.

Abstract: A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.

Abstract: A method for minimizing damage to a substrate while repairing a defect in a phase shifting mask for an integrated circuit comprising locating a bump defect in a phase shifting mask, depositing a first layer of protective coating to an upper surface of the bump defect, depositing a second layer of protective coating to areas of the phase shifting mask adjacent the bump defect, etching the first layer of protective coating and removing the bump defect.