Abstract: Vertical-cavity surface-emitting lasers (VCSELs) and VCSEL arrays having small size and small pitch are provided. Particularly, the present disclosure relates to novel and advantageous chip layouts for ensuring low resistance devices with good yield for small pitch arrays. More particularly, the present disclosure describes approaches for reducing the area consumed by a VCSEL structure so that a higher density VCSEL device may be achieved.

Abstract: The present invention relates to a Vertical-Cavity Surface-Emitting Laser (VCSEL) die comprising a VCSEL array configured for flip chip bonding to a substrate with the VCSEL array being designed for emission from a substrate side of the chip, integrated beam shaping optics and electrical contacts including a top surface contact and an etched metal connection through a top mirror structure to a bottom n-mirror, or to an n-doped buffer layer under the bottom n-mirror or to the substrate. The invention further relates to an assembly comprising the above VCSEL die and a photodetector in which the VCSEL die is attached to a circuit board or sub-mount with a solder or bump bonds on the VCSEL die and the photodetector is placed on a same circuit board or sub-mount right next to the VCSEL die.

Abstract: Vertical-cavity surface-emitting lasers (VCSELs) and VCSEL arrays having small size and small pitch are provided. Particularly, the present disclosure relates to novel and advantageous chip layouts for ensuring low resistance devices with good yield for small pitch arrays. More particularly, the present disclosure describes approaches for reducing the area consumed by a VCSEL structure so that a higher density VCSEL device may be achieved.

Abstract: The present disclosure relates to novel and advantageous VCSELs and VCSEL arrays. In particular, the present disclosure relates to novel and advantageous VCSELs and VCSEL arrays having, or patterned in, unique shapes, including rectangular shapes, linear shapes, shapes having two or more segments, and other non-circular shapes. Additionally, VCSELs and VCSEL arrays of the present disclosure may be combined with optical elements. In some embodiments, optical elements may be monolithically integrated on the VCSEL dies, or may be monolithically integrated on standoff pedestals arranged on the VCSEL dies.

Abstract: VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.

Abstract: VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.

Abstract: VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.

Abstract: VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.

Abstract: VCSEL apparatus having a substrate, a solid-state gain medium, a reflective mirror on one side of the medium, a movable reflective mirror on an opposite side of the medium, and a mechanism configured to move the movable mirror to tune a characteristic wavelength. Also described is a VCSEL apparatus having a silicon substrate having a slot therethrough and electrical connections formed on a first face, a substrate having VCSELs thereon and mounted across the slot and electrically connected to the electrical connections on the silicon substrate, and a glass substrate affixed to a second face of the silicon substrate. Also described is a VCSEL apparatus having a graded-index lens array having GRIN lenses mounted adjacently in a staggered arrangement, a PCB mounted to the lens array, and VCSEL chips mounted adjacently on the PCB and arranged so as to emit laser light through the lenses.

Abstract: VCSELs and methods having improved characteristics. In some embodiments, these include a semiconductor substrate; a vertical-cavity surface-emitting laser (VCSEL) on the substrate; a first electrical contact formed on the VCSEL; a second electrical contact formed on the substrate, wherein the VCSEL includes: a first resonating cavity having first and second mirrors, at least one of which partially transmits light incident on that mirror, wherein the first second mirrors are electrically conductive. A first layer is between the first mirror and the second mirror and has a first aperture that restricts the path of current flow. A second layer is between the first layer and the second mirror and also restricts the electrical current path. A multiple-quantum-well (MQW) structure is between the first mirror and the second mirror, wherein the first and second apertures act together to define a path geometry of the current through the MQW structure.