Abstract: A light guide comprising a polymeric layer at least 25 percent transmissive over at least a 30 nm bandwidth in a wavelength range from 180 to 280 nm over a distance of at least 100 micrometers and visible light transparent reflecting layers (UV-C mirror) that are at least 50 percent reflective over at least 30 nm bandwidth in a wavelength range from 180 to 280 nm over an incident light angle of 0 to 90 degrees and that are at least 25 percent transmissive of visible light over at least 30 nm bandwidth in a wavelength range of 400 to 800 nm over an incident light angle of 0 to 90 degrees. The light guide is useful, for example, for antimicrobial surfaces.

Abstract: The present disclosure generally relates to displaying information related to a physical activity. In some embodiments, methods and user interfaces for managing the display of information related to a physical activity are described.

Abstract: An output driver circuit and current control technique to facilitate high-speed buses with low noise is used to interface with high-speed dynamic RAMs (DRAMs). The architecture includes the following components: an input isolation block (120), an analog voltage divider (104), an input comparator (125), a sampling latch (130), a current control counter (115), and a bitwise output driver (output driver A 107 and output driver B 111).

Abstract: A method of operating an integrated circuit including an output driver. The method includes storing a value in a register, wherein the value is representative of a voltage swing setting of an output driver. The voltage swing setting of the output driver is adjusted using a counter that holds a count value representing an update to the voltage swing setting. The count value is updated in accordance with a signal that indicates an adjustment to the voltage swing setting. In addition, an integrated circuit memory device comprising an output driver, a register and a counter is provided. The counter updates a count value in response to a signal that indicates a direction to adjust the count value.

Abstract: A system including an integrated circuit memory device. The integrated circuit device comprises a register to store a value representative of an output voltage setting. A circuit holds a value representative of an adjustment to the output voltage setting. An output driver outputs a drive voltage during a calibration operation, wherein a signal is generated based on a comparison between a signal derived from the drive voltage and a reference voltage. The signal updates the value representative of the adjustment to the output voltage setting.

Abstract: A method of operating a memory system that includes an integrated circuit memory device is provided. A value representing an output voltage setting of an output driver of the memory device is stored in a register. The output driver outputs the drive voltage. A signal derived from the drive voltage is compared to a reference signal to generate a signal that indicates an adjustment to the output voltage setting. The output voltage setting of the output driver is adjusted using a counter that holds a count value representing an update to the output voltage setting. The count value is updated in accordance with a signal that indicates the adjustment to the output voltage setting.

Abstract: An output driver circuit and current control technique to facilitate high-speed buses with low noise is used to interface with high-speed dynamic RAMs (DRAMs). The architecture includes the following components: an input isolation block (120), an analog voltage divider (104), an input comparator (125), a sampling latch (130), a current control counter (115), and a bitwise output driver (output driver A 107 and output driver B 111).

Abstract: A memory system and method of adjusting an output driver characteristic of a memory device that is included in the memory system. The method includes providing a command to the memory device that specifies a calibration mode and, during the calibration mode, driving a voltage level onto the first signal line using a first output driver. A first voltage level is derived from an amount of voltage swing generated by the first output driver driving the voltage level onto the first signal line. The method also includes: actively coupling a first comparator to the first signal line; when the first comparator is coupled to the first signal line, comparing the first voltage level with a reference voltage using the first comparator; and adjusting the amount of voltage swing to arrive at a calibrated voltage swing level. In addition, the method includes actively isolation the first comparator from the first signal line upon exiting the calibration mode.

Abstract: A semiconductor controller device to control the operation of a semiconductor memory device. The controller device includes a first output driver coupled to a first output terminal, and a second output driver coupled to a second output terminal. In addition, the controller device includes a voltage divider, coupled between the first and second output terminals, to generate a control voltage based on a voltage level present on the first output terminal and a voltage level present on the second output terminal. In addition, the controller device also includes a comparator, coupled to the voltage divider, to compare the control voltage with a reference voltage, wherein an amount of voltage swing of the first output driver is adjusted based on the comparison between the control voltage and the reference voltage.

Abstract: An output driver circuit and current control technique to facilitate high-speed buses with low noise is used to interface with high-speed dynamic RAMs (DRAMs). The architecture includes the following components: an input isolation block (120), an analog voltage divider (104), an input comparator (125), a sampling latch (130), a current control counter (115), and a bitwise output driver (output driver A 107 and output driver B 111).

Abstract: A semiconductor memory device including an array of memory cells. The memory device includes a first output driver coupled to a first output terminal, and a second output driver coupled to a second output terminal. The memory device further includes a voltage divider coupled between the first and second output terminals, to generate a control voltage based on a voltage level present on the first output terminal and a voltage level present on the second output terminal. The memory device further includes a comparator, coupled to the voltage divider, to compare the control voltage with a reference voltage, wherein an amount of voltage swing of the first output driver is adjusted based on the comparison between the control voltage and the reference voltage.

Abstract: An output driver circuit and current control technique to facilitate high-speed buses with low noise is used to interface with high-speed dynamic RAMs (DRAMs). The architecture includes the following components: an input isolation block (120), an analog voltage divider (104), an input comparator (125), a sampling latch (130), a current control counter (115), and a bitwise output driver (output driver A 107 and output driver B 111).

Abstract: An output driver circuit and current control technique to facilitate high-speed buses with low noise is used to interface with high-speed dynamic RAMs (DRAMs). The architecture includes the following components: an input isolation block (120), an analog voltage divider (104), an input comparator (125), a sampling latch (130), a current control counter (115), and a bitwise output driver (output driver A 107 and output driver B 111).

Abstract: An output driver circuit and current control technique to facilitate high-speed buses with low noise is used to interface with high-speed dynamic RAMs (DRAMs). The architecture includes the following components: an input isolation block (120), an analog voltage divider (104), an input comparator (125), a sampling latch (130), a current control counter (115), and a bitwise output driver (output driver A 107 and output driver B 111).

Abstract: An output driver circuit and current control technique to facilitate high-speed buses with low noise is used to interface with high-speed dynamic RAMs (DRAMs). The architecture includes the following components: an input isolation block (120), an analog voltage divider (104), an input comparator (125), a sampling latch (130), a current control counter (115), and a bitwise output driver (output driver A 107 and output driver B 111).

Abstract: A synchronous DRAM system with internal refresh is controlled by a refresh signal issued by an oscillator or memory controller coupled to the DRAM. By locating the oscillator on the processor or memory controller better control of the frequency of refresh is achieved, particularly, as the signal can be derived from a crystal which is not sensitive to variations in operating conditions. The oscillator drives a refresh signal on a bus or signal line to the DRAM, such that the refresh address counter is incremented and the row identified by the refresh address counter is refreshed.

Abstract: A power control circuit to minimize power consumption of CMOS circuits by disabling/enabling the clock input to the CMOS circuit. A phase locked loop (PLL) or delay locked loop (DLL) drives a capacitive load of the component and a dummy load comparable to the component load. A standby latch is provided to control the clock input to the component. In a standby state, the clock signal is not provided to the component but the PLL/DLL continues to operate, driving the dummy load. Thus, when it is desirable to power on the circuit, the standby latch is reset and the clock signal is provided to the component, thereby turning on the component with little latency.

Abstract: A high speed bus system in which at least one master device, such as a processor and at least one DRAM slave device are coupled to the bus. An innovative packet format and device interface which utilizes a plurality of time and space saving features in order to decrease the die size of the device receiver and decrease the overall latency on the bus is provided. In the preferred embodiment the request packet is transmitted on ten multiplexed transmission lines, identified as BusCtl and BusData [8:0]. The packet is transmitted over six sequential bus cycles, wherein during each bus cycle, a different portion of the packet is transmitted. The lower order address bits are moved ahead of the higher order address bits of the memory request. This enables the receiving device to process the memory request faster as the locality of the memory reference with respect to previous references can be immediately determined and page mode accesses on the DRAM can be initiated as quickly as possible.