Abstract: Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.

Abstract: A method for polishing computer rigid disks comprising bringing at least one surface of the rigid disk into contact with a polishing pad and applying a dispersion to the rigid disk to give a polished rigid disk having an rms roughness less than about 1.4 nm. Also disclosed is a dispersion and polishing slurry for polishing rigid disks.

Abstract: A slurry for use in chemical-mechanical polishing of a metal layer comprising high purity fine metal oxide particles uniformly dispersed in a stable aqueous medium.

Abstract: The present invention includes metal oxide foam particles and a method of making the same. A decomposable metal salt feed solution is injected into a hot atomizing gas. The mixture of hot atomizing gas and feed solution is maintained in the reactor until the feed solution converts to metal oxide foam particles. The metal oxide foam particles have a high specific surface area.

Abstract: The present invention includes metal oxide foam particles and a method of making the same. A decomposable metal salt feed solution is injected into a hot atomizing gas. The mixture of hot atomizing gas and feed solution is maintained in the reactor until the feed solution converts to metal oxide foam particles. The metal oxide foam particles have a high specific surface area.

Abstract: The present invention is a method of producing single, unaggregated magnetic iron oxide particles. An iron or iron and divalent metal halide feed solution is kinetically atomized into a high velocity flame. The feed solution is vaporized and held in a reactor at a temperature and partial pressure of an oxidizing phase sufficient to form either ferrous oxide or magnetite particles. The iron or iron and divalent metal halide vapor reacts with the oxidizing phase vapor and converts to either ferrous oxide vapor or magnetite vapor. Since the vapor phase is beyond equilibrium concentration ferrous oxide or magnetite particles precipitate from the vapor phase. Quenching of the magnetite particles at an enhanced rate to less than 500.degree. C. in a reducing atmosphere renders magnetite and in a oxidizing atmosphere renders maghemite. Quenching of the ferrous oxide particles in a non-oxidizing atmosphere produces magnetite particles.

Abstract: A method for producing fine magnetic particles having the barium or strotium ferrite M-phase crystal structure. An iron and alkaline earth metal halide feed solution is vaporized to form a precursor and oxidizing vapor phase. The precursor and hydrolyzing or oxidizing vapor phases are held in a reactor at a temperature sufficient to effect vaporization of the feed solution yet which is below the melting point of the desired M-phase crystal structure. Small iron oxide particles precipitate from the vapor phase and alkaline earth oxides thereafter. The alkaline earth oxide particles diffuse into the iron oxide particles to form the desired M-phase structure. When the desired width and thickness of the M-phase crystal platelets is achieved, the M-phase particles are cooled by quenching.