Abstract: A protector assembly includes a first shield segment defining a first blade space. The first shield segment includes a first channel structure defining a first channel facing the first blade space. The protector assembly further includes a second shield segment defining a second blade space. The second shield segment includes a second channel structure defining a second channel facing the second blade space. The first shield segment further includes (i) a first end portion that includes a first coupling structure, and (ii) a second end portion that includes a second coupling structure. The second shield segment further includes (i) a third end portion that includes a third coupling structure, and (ii) a fourth end portion that includes a fourth coupling structure.

Abstract: A protector assembly includes a first shield segment defining a first blade space. The first shield segment includes a first channel structure defining a first channel facing the first blade space. The protector assembly further includes a second shield segment defining a second blade space. The second shield segment includes a second channel structure defining a second channel facing the second blade space. The first shield segment further includes (i) a first end portion that includes a first coupling structure, and (ii) a second end portion that includes a second coupling structure. The second shield segment further includes (i) a third end portion that includes a third coupling structure, and (ii) a fourth end portion that includes a fourth coupling structure.

Abstract: A rod holder that for supporting a hanger rod in a shelving system. The hanger rod holder includes at least two materials, with a central plate that may be made of metal that may be substantially encapsulated in molded plastic. The hanger rod holder is mounted to a shelf bracket, and may be used with either solid or wire shelving systems. The low end of the holder engages a hanger rod, and may be configured to resiliently cradle the rod, with the rod being held in place in the holder by spreading the resilient ends of a C-shaped opening in the lower end of the holder.

Abstract: A cap nitride stack which prevents etch penetration to the HDP nitride while maintaining the electromigration benefits of HDP nitride atop Cu. In one embodiment, the stack comprises a first layer of HDP nitride and a second layer of a Si—C—H compound disposed over the first layer. The Si—C—H compound is for example BLoK, or N-BLoK (Si—C—H—N), and is selected from a group of materials that has high selectivity during via RIE such that RIE chemistry from the next wiring level does not punch through. Carbon and nitrogen are the key elements. In another embodiment, the stack comprises a first layer of HDP nitride, followed by a second layer of UVN (a plasma nitride), and a third layer comprising HDP nitride disposed over the second layer.

Abstract: A cap nitride stack which prevents etch penetration to the HDP nitride while maintaining the electromigration benefits of HDP nitride atop Cu. In one embodiment, the stack comprises a first layer of HDP nitride and a second layer of a Si—C—H compound disposed over the first layer. The Si—C—H compound is for example BLoK, or N-BLoK (Si—C—H—N), and is selected from a group of materials that has high selectivity during via RIE such that RIE chemistry from the next wiring level does not punch through. Carbon and nitrogen are the key elements. In another embodiment, the stack comprises a first layer of HDP nitride, followed by a second layer of UVN (a plasma nitride), and a third layer comprising HDP nitride disposed over the second layer.

Abstract: The present invention provides photolithographic device and method for photolithography process window. The photolithography device comprises a substrate; and a pattern layer having radiant energy transparent portions and radiant energy blocking portions, where the pattern layer has features with a varying overlay. The overlay tolerance is determined by varying the misalignment the features of the pattern. The photolithography device is a reticle. The method for determining an optimum photolithography process window comprises exposing a portion of a wafer to a pattern produced by a reticle, the pattern having a varying overlay that produces multiple photolithography conditions, wherein each photolithography condition has an overlay tolerance; and stepping the reticle across a remaining portion of the wafer, where each step exposes an other region of the wafer to the pattern producing multiple photolithography conditions.

Abstract: The present invention provides photolithographic device and method for optimizing the photolithography process window. The photolithography device comprises a substrate; and a pattern layer having radiant energy transparent portions and radiant energy blocking portions, where the pattern layer has features with a varying overlay. The overlay tolerance is determined by varying the misalignment the features of the pattern. The photolithography device is a reticle. The method for determining an optimum photolithography process window comprises exposing a portion of a wafer to a pattern produced by a reticle, the pattern having a varying overlay that produces multiple photolithography conditions, wherein each photolithography condition has an overlay tolerance; and stepping the reticle across a remaining portion of the wafer, where each step exposes an other region of the wafer to the pattern producing multiple photolithography conditions.