Abstract: In a general aspect, a position detection system includes a magnetic field generator configured to generate a time-varying magnetic field. The magnetic field generator includes a carrier assembly that defines a first axis of rotation and comprises a permanent magnet having a center of mass. The magnetic field generator also includes a drive assembly that is coupled to the carrier assembly and configured to act on the carrier assembly to rotate the permanent magnet simultaneously about the first axis of rotation and a second axis of rotation. The second axis of rotation intersects the first axis of rotation at an intersection that is offset from the center of mass of the permanent magnet. The position detection system additionally includes a computer device configured to determine a position of a sensor based on magnetic field measurements obtained by the sensor in the time-varying magnetic field.

Abstract: Methods, apparatus, systems and articles of manufacture are disclosed for generating an audiovisual response for an avatar. An example method includes converting a first digital signal representative of first audio including a first tone, the first digital signal incompatible with a model, to a plurality of binary values representative of a first characteristic value of the first tone, the plurality of binary values compatible with the model, selecting one of a plurality of characteristic values associated with a plurality of probability values output from the model, the probability values incompatible for output via a second digital signal representative of second audio, as a second characteristic value associated with a second tone to be included in the second audio, the second characteristic value compatible for output via the second digital signal, and controlling the avatar to output an audiovisual response based on the second digital signal and a first response type.

Abstract: Memristors and their fabrication are provided. A first dielectric layer is formed over one or more conductive pathways. Vias are formed in the dielectric layer and filled with conductive material. A second dielectric layer is formed there over, and vias are formed aligned with and extending to the filled vias. A reactant fluid is introduced into the vias such that a reacted portion of the conductive material is defined within the filled vias. The vias in the second dielectric layer are then filled with conductive material such that memristors are defined. Conductive pathways are then formed over and in contact with the memristors such that each is individually addressable.

Abstract: A nanoscale switching device has an active region disposed between two electrodes of nanoscale widths. The active region contains a switching material that carries mobile ionic dopants capable of being transported over the active region under an electric field to change a resistive state of the device. The switching material further carries immobile ionic dopants for inhibiting clustering of the mobile ionic dopants caused by switching cycles of the device. The immobile ionic dopants have a charge opposite in polarity to the charge of the mobile ionic dopants, and are less mobile under the electric field than the mobile ion dopants.

Abstract: A memristor based on mixed-metal-valence compounds comprises: a first electrode; a second electrode; a layer of a mixed-metal-valence phase in physical contact with at least one layer of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field. One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer of a fully oxidized phase and the other is in electrical contact with the layer (or other layer) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode and an ON-switched diode are also provided. A method of operating the memristor is further provided.

Abstract: Memristors and their fabrication are provided. A first dielectric layer is formed over one or more conductive pathways. Vias are formed in the dielectric layer and filled with conductive material. A second dielectric layer is formed there over, and vias are formed aligned with and extending to the filled vias. A reactant fluid is introduced into the vias such that a reacted portion of the conductive material is defined within the filled vias. The vias in the second dielectric layer are then filled with conductive material such that memristors are defined. Conductive pathways are then formed over and in contact with the memristors such that each is individually addressable.

Abstract: A nanoscale switching device has an active region disposed between two electrodes of nanoscale widths. The active region contains a switching material that carries mobile ionic dopants capable of being transported over the active region under an electric field to change a resistive state of the device. The switching material further carries immobile ionic dopants for inhibiting clustering of the mobile ionic dopants caused by switching cycles of the device. The immobile ionic dopants have a charge opposite in polarity to the charge of the mobile ionic dopants, and are less mobile under the electric field than the mobile ion dopants.

Abstract: A memcapacitor device includes a memcapacitive matrix interposed between a first electrode and a second electrode. The memcapacitive matrix includes deep level dopants having a first decay time constant and shallow level dopants having a second decay time constant. The second decay time constant is substantially shorter than the first decay time constant. The capacitance of the memcapacitor device depends upon an initial voltage applied across the memcapacitive matrix and a time dependent change in capacitance of the memcapacitor device depends upon the first decay time constant. A method for forming a memcapacitive device is also provided.

Abstract: A memristor (100, 100?, 100?) based on mixed-metal-valence compounds comprises: a first electrode (115); a second electrode (120); a layer (105) of a mixed-metal-valence phase in physical contact with at least one layer (110, 110a, 110b) of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field (125). One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer (110a) of a fully oxidized phase and the other is in electrical contact with the layer (or other layer (110b)) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other.

Abstract: The present invention relates to the internal gettering of impurities in semiconductors by metal alloy clusters. In particular, intermetallic clusters are formed within silicon, such clusters containing two or more transition metal species. Such clusters have melting temperatures below that of the host material and are shown to be particularly effective in gettering impurities within the silicon and collecting them into isolated, less harmful locations. Novel compositions for some of the metal alloy clusters are also described.

Abstract: A receiver-dryer of an integrated receiver-dryer-condenser for an air-conditioning system that maximizes a liquid phase of refrigerant therein for return to a sub-cooling stage of a condenser. A receiver-dryer vessel includes a base wall, a side wall extending from the base wall, and a concave end wall terminating the side wall. A refrigerant inlet pipe extends into the interior of the vessel and terminates in an exit end that faces the concave end wall of the vessel. The refrigerant inlet pipe is adapted for directing refrigerant into contact with the concave end wall such that the refrigerant impinges on the concave end wall for improved dispersion into a gaseous phase that accumulates in the upper portion of the vessel and a liquid phase that flows down the walls of the vessel to accumulate in the lower portion of the vessel and for improved separation of the liquid phase and to return to the sub-cooling stage of the condenser for improved sub-cooling of the liquid phase of the refrigerant.

Abstract: An alignment device for squarely aligning a conduit within a conduit port of a housing. The alignment device includes a connecting block having a conduit passage therethrough and into which the conduit is trapped. The connecting block has a fastener passage therethrough that is laterally offset from the conduit passage. A fastener is threaded into the housing and is offset from the conduit port. The fastener includes an alignment sleeve that mounts to a portion thereof. The connecting block mounts to the housing and the conduit fits into the conduit port, whereby the alignment sleeve pilots the fastener passage of the connecting block to squarely align the conduit within the conduit port.

Abstract: An engagement device for a cantilevered conduit connection that provides an assembler with visible, audible, and tactile redundant verification that the connection is completely engaged. The engagement device assists in holding a connecting block in place to a housing. The housing includes a fastener port with a fastener fastened therein. The engagement device includes a locking portion at one end thereof, and circumscribes a portion of the fastener. The connecting block mounts to the housing and includes a fastener passage through the connecting block that mounts around the engagement device. The connecting block further includes an engagement surface that mates with the locking portion of the engagement device to assist in fastening the connecting block to the housing. The locking portion of the engagement device expands against the engagement surface of the connecting block to provide visible, audible, and tactile verification that the connecting block is completely engaged to the housing.