Abstract: The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.

Abstract: An aqueous composition is useful for polishing semiconductor wafers. The composition comprises a nonionic surfactant that suppresses removal rate of silicon carbide-nitride and has a hydrophilic group and a hydrophobic group. The hydrophobic group has a carbon chain length of greater than three. And the nonionic surfactant suppresses silicon carbide-nitride removal rate at least 100 angstroms per minute greater than its decrease in silicon nitride removal rate as measured with a microporous polyurethane polishing pad pressure measured normal to a wafer of 13.8 kPa.

Abstract: A method of reducing defectivity during chemical mechanical planarization (CMP) in a system having a wafer membrane and a retaining ring is disclosed. The method includes planarizing test wafers using different values of ring pressure and wafer pressure to determine an optimum ring pressure and wafer pressure, i.e., the ring pressure and wafer pressure that results in a reduced defectivity.

Abstract: A method of reducing defectivity during chemical mechanical planarization (CMP) in a system having a wafer membrane and a retaining ring is disclosed. The method includes planarizing test wafers using different values of ring pressure and wafer pressure to determine an optimum ring pressure and wafer pressure, i.e., the ring pressure and wafer pressure that results in a reduced defectivity.