Abstract: There is provided a UV energy curable tape comprising an adhesive material including a UV energy curable oligomer, a UV energy initiator, and a material which emits optical light when the tape composition is substantially fully cured. A semiconductor chip made using the tape is also provided.

Abstract: There is provided a UV energy curable tape comprising an adhesive material including a UV energy curable oligomer, a UV energy initiator, and a material which emits optical light when the tape composition is substantially fully cured. A semiconductor chip made using the tape is also provided.

Abstract: There is provided a UV energy curable tape comprising an adhesive material including a UV energy curable oligomer, a UV energy initiator, and a material which emits optical light when the tape composition is substantially fully cured. A semiconductor chip made using the tape is also provided.

Abstract: A method for preventing edge chipping and cracking damage encountered by semiconductor chips in a die picking operation during separation from an adhesive sheet. Also provided is a device for preventing potential edge chipping and cracking damage encountered by a semiconductor chip during die picking processes.

Abstract: A method for preventing edge chipping and cracking damage encountered by semiconductor chips in a die picking operation during separation from an adhesive sheet. Also provided is a device for preventing potential edge chipping and cracking damage encountered by a semiconductor chip during die picking processes.

Abstract: A thermally conductive protective film or layer is applied to the backside surface of a semiconductor wafer prior to a subsequent dicing operation performed on the wafer to singulate the wafer into diced semiconductor chips, during which the thin thermally conductive film minimizes and prevents chipping and cracking damage to the wafer and diced chips. During subsequent electrical operation of a diced chip, the thin thermally conductive film functions as a thermal conductor to dissipate and conduct away to a heat sink any heat generated during operation of the chip.

Abstract: A method for the removal of residual UV radiation-sensitive adhesive from the surfaces of semiconductor wafers, remaining thereon from protective UV radiation-sensitive tapes which were stripped from the semiconductor wafers. Moreover, provided is an arrangement for implementing the removal of residual sensitive adhesive, which remain from tapes employed as protective layers on semiconductor wafers, particularly wafers having surfaces including C4 connections.

Abstract: There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.

Abstract: There is provided a method for making a wafer including the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.

Abstract: There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.