Patents by Inventor Matthew S. Byunoski

Matthew S. Byunoski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High dielectric constant materials as gate dielectrics
    Patent number: 6297107
    Abstract: A semiconductor structure having a gate dielectric between a gate electrode and a semiconductor substrate is formed with a high dielectric metal oxide layer by replacing a sacrificial gate oxide. Embodiments include forming the metal oxide layer by applying a chemical solution deposition of a metalorganic on to an exposed surface of the substrate followed by pyrolizing the metalorganic residue to a metal oxide.
    Type: Grant
    Filed: October 19, 2000
    Date of Patent: October 2, 2001
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Eric Paton, Matthew S. Byunoski, Paul R. Besser, Paul L. King, Qi Xiang